Electron spin resonance and related phenomena in low-dimensional structures / Marco Fanciulli (ed.).

Format:

Book

Contributor:

Fanciulli, M. (Marco), editor.

Carl Hering Fund.

Class of 1891 Department of Arts Fund.

Series:

Topics in applied physics ; v. 115.

Topics in applied physics, 0303-4216 ; v. 115

Language:

English

Subjects (All):

Low-dimensional semiconductors.

Electron paramagnetic resonance.

Physical Description:

xiv, 261 pages : illustrations (some color) ; 24 cm.

Place of Publication:

Berlin : Springer, [2009]

Summary:

This book is devoted to the discussion of the state-of-the-art of spin resonance in low dimensional structures, such as two-dimensional electron systems, quantum wires, and quantum dots. World leading scientists in the field report on recent advances and discuss open issues and perspectives. Frontiers and opportunities for spin resonance techniques, with particular emphasis on fundamental physics, nanoelectronics, spintronics and quantum information processing, are discussed.

Contents:

Resistively Detected ESR and ENDOR Experiments in Narrow and Wide Quantum Wells: A Comparative Study / Joshua D. Caldwell, Clifford R. Bowers, Guennadii M. Gusev 1

1 Introduction 1

2 Theory 2

3 Experiment 4

4 Results 4

5 Conclusions 11

References 12

Index 13

Electron-Spin Manipulation in Quantum Dot Systems / Yasuhiro Tokura, Toshiaki Obata, Tsuyoshi Hatano, Seigo Tarucha 15

1 Introduction 15

2 Single-Spin Manipulation 16

2.1 Oscillating Magnetic Field 17

2.2 Slanting Zeeman Field 19

3 Two-Spin Interaction 23

3.1 Formulation 23

3.2 Hybrid Double Dots 27

3.3 Double QD with Slanting Zeeman Field 30

4 Conclusion 31

References 31

Index 34

Resistively Detected NMR in GaAs/AlGaAs / Guillaume Gervais 35

1 Nuclear Magnetic Resonances with 'Too Few Spins' 36

1.1 The 'Too Few Spins' Problem 36

1.2 Electrons as an In-Situ Detector of the NMR 37

2 Recent Advances in GaAs/AlGaAs Semiconductor Quantum Wells 40

2.1 Resistively Detected NMR Lineshapes in GaAs/AlGaAs 40

2.2 Spin-Lattice Relaxation-Time Measurements 43

3 Towards a Complete NMR Probe of Quantum Structures 46

3.1 NMR in Quantum Electronic Structures of GaAs/AlGaAs 46

3.2 NMR on a Chip: Quantum Coherent Control of the Nuclear Spins at the Nanoscale 47

4 Concluding Remarks 48

References 48

Index 49

Electron-Spin Dynamics in Self-Assembled (In,Ga)As/GaAs Quantum Dots / A. Greilich, D.R. Yakovlev, M. Bayer, A. Shabaev, Al. L. Efros 51

1 Introduction 51

2 Experiment 53

3 Electron g-Factor 54

4 Creation of Spin Coherence by Spin Initialization 56

5 Electron-Spin Coherence 65

6 Summary 77

References 78

Index 80

Single-Electron-Spin Measurements in Si-Based Semiconductor Nanostructures / H.W. Jiang, E. Yablonovitch, M. Xiao, M. Sakr, G. Scott, E.T. Croke 81

1 Introduction 81

2 Measurements of a Single Spin in the SiO₂ of a Submicrometer Si Field Effect Transistor 83

2.1 Statistical Measurements 84

2.2 Detection of Electron-Spin Resonance (ESR) of a Single Spin 88

2.3 Single-Shot Measurement 91

3 Fabrication and Characterization of Electrostatically Confined Quantum-Dot Structures in Si/SiGe Heterostructures 91

3.1 Demonstration of a One-Electron Quantum Dot 92

3.2 Characterization of the Spin-Transition Sequence 95

3.3 Single-Shot Measurement 96

4 Concluding Remarks 98

References 98

Index 100

Si/SiGe Quantum Devices, Quantum Wells, and Electron-Spin Coherence / J.L. Truitt, K.A. Slinker, K.L.M. Lewis, D.E. Savage, Charles Tahan, L.J. Klein, J.O. Chu, P.M. Mooney, A.M. Tyryshkin, D.W. van der Weide, Robert Joynt, S.N. Coppersmith, Mark Friesen, M.A. Eriksson 101

1 Introduction 102

2 Silicon Quantum Devices 103

3 Spins and Valleys 106

4 ESR in Silicon Quantum Wells 107

5 Samples 109

6 ESR Measurements 11O

7 Decoherence Analysis 111

8 Results 113

9 Conclusions 115

References 115

Index 126

Electrical Detection of Electron-Spin Resonance in Two-Dimensional Systems / Junya Matsunami, Tohru Okamoto 129

1 Mechanism of Electrical Detection 129

2 Determination of Spin-Relaxation Times 133

References 138

Index 140

Quantitative Treatment of Decoherence / Leonid Fedichkin, Vladimir Privman 141

1 Introduction 141

2 Measures of Decoherence 142

2.1 Relaxation Timescales 142

2.2 Quantum Entropy 143

2.3 Fidelity 143

2.4 Norm of Deviation 145

2.5 Arbitrary Initial States 145

3 Decoherence of Double Quantum-Dot Charge Qubits 146

3.1 Model 147

3.2 Piezoelectric Interaction 148

3.3 Deformation Interaction 150

3.4 Error Estimates During Gate Functions 151

3.5 Relaxation During the NOT Gate 151

3.6 Dephasing During a Phase Gate 154

3.7 Qubit Error Estimates 155

4 Additivity of Decoherence Measures 157

4.1 The Maximal Deviation Norm 158

4.2 Upper Bound for Measure of Decoherence 160

References 162

Index 167

Measuring the Charge and Spin States of Electrons on Individual Dopant Atoms in Silicon / Søren E.S. Andresen, Dane R. McCamey, Rolf Brenner, Marc A. Ahrens, Mladen Mitic, Victor C. Chan, Eric Gauja, Fay E. Hudson, Andrew J. Ferguson, Tilo M. Buehler, David J. Reilly, Robert G. Clark, Andrew S. Dzurak, Alex R. Hamilton, Cameron J. Wellard, Changyi Yang, Toby Hopf, Jeff McCallum, David N. Jamieson, Lloyd C. L. Hollenberg, Wayne D. Hutchison, Hans Huebl, Martin S. Brandt 169

1 Quantum Computing with Phosphorus in Silicon 170

1.1 Electronic Donor States of Phosphorus in Silicon 171

1.2 Coupled Pairs of Phosphorus Donors as Charge Qubits 171

2 Controlled Single-Ion Implantation 173

2.1 Single-Ion Detection with Integrated p-i-n Diodes 173

3 Charge Sensing with Superconducting RF-SETs 174

3.1 Layout and Performance of RF-SET Measurements 175

4 Initialization and Readout with Schottky Contacts 177

4.1 Contacting Atomically Doped Devices 177

5 Magnetic Resonance in Nanoscale Implanted Devices 178

References 181

Index 182

Electron Spin as a Spectrometer of Nuclear-Spin Noise and Other Fluctuations / Rogerio de Sousa 183

1 Introduction 183

2 Noise, Relaxation, and Decoherence 186

2.1 The Bloch-Wangsness-Redfield Master Equation 186

2.2 Finite Frequency Phase Fluctuations and Coherence Decay in the Semiclassical-Gaussian Approximation 188

2.3 Single-Spin Measurement Versus Ensemble Experiments:Different Coherence Times? 194

3 Electron-Spin Evolution Due to Nuclear Spins: Isotropic and Anisotropic Hyperfine Interactions, Internuclear Couplings and the Secular Approximation 196

3.1 The Electron-Nuclear Spin Hamiltonian 196

3.2 Electron-Nuclear-Spin Evolution in the Secular Approximation 198

3.3 Beyond the Secular Approximation: Nuclear-Nuclear Interactions Mediated by the Electron Spin Hyperfine Interaction 200

4 Microscopic Calculation of the Nuclear-Spin Noise Spectrum and Electron-Spin Decoherence 202

4.1 Nuclear-Spin Noise 203

4.2 Mean Field Theory of Noise Broadening: Quasiparticle Lifetimes 206

5 Electron Spin-Echo Decay of a Phosphorus Impurity in Silicon: Comparison with Experiment 209

5.1 Effective-Mass Model for a Phosphorus Impurity in Silicon 209

5.2 Explicit Calculations of the Nuclear-Spin Noise Spectrum and Electron Spin-Echo Decay of a Phosphorus Impurity in Silicon 210

6 Conclusions and Outlook for the Future 215

References 218

Index 220

A Robust and Fast Method to Compute Shallow States without Adjustable Parameters: Simulations for a Silicon-Based Qubit / Alberto Debernardi, Marco Fanciulli 221

1 Shallow Impurities in an External Field 223

1.1 Envelope Function Approximation 224

1.2 The Central-Cell Correction 225

1.3 Numerical Basis Set 226

2 Phosphorous Impurity in Silicon 226

2.1 Bulk Ingredients 227

3 Theoretical Results: Si:P 227

3.1 The Core-Correction Contribution 228

3.2 Stark Effect 229

3.3 Electric-Field Dependence of Superhyperfine Constants 232

4 Confinement Effects 234

5 Conclusions 237

References 238

Index 239

Photon-Assisted Tunneling in Quantum Dots / Enrico Prati, Rossella Latempa, Marco Fanciulli 241

1 Introduction 241

2 Theory of Photon-Assisted Tunneling in Quantum Dots 242

Hamiltonian Formalism of Tunneling under Microwave Irradiation 243

Tunneling in Quantum Dots under Microwave Irradiation 244

Typical Regimes of Operation 246

3 Experimental Results in III-V Heterostructure Quantum Dots 247

4 Group IV Heterostructure Quantum Dots 250

5 Si/SiO₂ nanoFET Quantum Dots 252

6 Conclusions 256

References 257

Index 258.

Notes:

Includes bibliographical references and indexes.

Local Notes:

Acquired for the Penn Libraries with assistance from the Class of 1891 Department of Arts Fund.

Acquired for the Penn Libraries with assistance from the Carl Hering Fund.

ISBN:

9783540793649

354079364X

OCLC:

227910632

Publisher Number:

99935632490