Polarization effects in semiconductors : from ab initio theory to device application / edited by Colin Wood.

Format:

Book

Contributor:

Wood, Colin.

Language:

English

Subjects (All):

Semiconductors.

Polarization (Electricity).

Physical Description:

xiii, 515 pages : illustrations ; 25 cm

Place of Publication:

New York ; London : Springer, 2007.

Summary:

Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications presents the latest understanding of the solid state physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of wurtzite compound semiconductors, and associated piezo-electric effects in strained thin film heterostructures. These heterostructures are used in wide band gap semiconductor based sensors, in addition to various electronic and opto-electronic semiconductor devices.

The book covers the ab initio theory of polarization in cubic and hexagonal semiconductors, growth of thin film GaN, GaN/AlGaN GaAlN/ AlGalnN, and other nitrides, and SiC heterostructures. It discusses the effects of spontaneous and piezoelectric polarization on band diagrams and electronic properties of abrupt and compositionally graded heterostructures, electronic characterization of polarization-induced charge distributions by scanning-probe spectroscopies, and gauge factors and strain effects. In addition, polarization in extended defects, piezo-electric strain/charge engineering, and application to device design and processing are covered. The effects of polarization on the fundamental electron transport properties, and on the basic optical transitions are described. The crucial role of polarization in devices such as high electron mobility transistors (HEMTs) and light-emitting diodes (LEDs) is covered.

The chapters are authored by professors and researchers in the fields of physics, applied physics and electrical engineering, who worked for 5 years under the "Polarization Effects in Semiconductors" DOD funded Multi Disciplinary University Research Initiative. This book will be of interest to graduate students and researchers working in the field of wide-bandgap semiconductor physics and their device applications. It will also be useful for practicing engineers in the field of wide-bandgap semiconductor device research and development.

Contents:

Theoretical Approach to Polarization Effects in Semiconductors / Piotr Boguslawski, J. Bernholc 1

2 Basic Electrostatics 2

3 Polarization 4

4 Ab Initio Calculations of the Electronic Structure 5

5 Modern Theory of Polarization 6

6 Polarization at Interfaces: Interface Dipoles 10

6.1 Averaging Microscopic Charges and Field 10

6.2 AlAs/GaAs Superlattice 11

7 Spontaneous Polarization in the Wurtzite Structure: BeO 12

8 GaN/AlN Superlattice: Spontaneous Polarization and Piezoelectricity 13

9 Electric Field-Driven Diffusion and Segregation of Dopants in Superlattices 16

9.2 Interfacial Segregation 17

9.3 Profile of H in AlN/GaN Superlattice 19

Polarization Induced Effects in GaN-based Heterostructures and Novel Sensors / O. Ambacher, V. Cimalla 27

2 First-Principles Prediction of Structural and Pyroelectric Properties 29

3 Lattice Constants, Average Bond Length and Bond Angles in Ternary Compounds 30

4 Polarity 40

5 Growth of Undoped AlGaN/GaN, InGaN/GaN and AlInN/GaN Hetero- and Nanostructures 41

5.1 AlGaN/GaN Heterostructures 41

5.2 InGaN/GaN Heterostructures 42

5.3 AlInN/GaN Heterostructures 42

6 Non-Linear Spontaneous and Piezoelectric Polarization in Group-III-Nitrides 42

6.1 Spontaneous Polarization 43

6.2 Piezoelectric Polarization 45

7 Polarization Induced Surface and Interface Charges 56

8 Sheet Carrier Concentration of Polarization Induced 2DEGs 61

8.1 2DEGs Confined at Interfaces of Undoped Ga-face AlGaN/GaN Heterostructures 63

8.2 2DEGs Confined at Interfaces of Undoped, Ga-face AlInN/GaN Heterostructures 65

8.3 2DEGs Confined in InGaN/GaN Single Quantum Wells 69

9 Sensors Based on Polarization Induced 2DEGs 74

9.2 Surface Sensitive Sensors 75

9.3 Mechanical Sensors 92

9.4 Sensor for Electromagnetic Fields 98

Lateral and Vertical Charge Transport in Polar Nitride Heterostructures / Yuh-Renn Wu, Madhusudan Singh, Jasprit Singh 111

1 Polar Heterostructures: What Do They Offer? 111

1.1 Polar Heterostructures: Undoped Electronics 112

1.2 The Applications of Nitrides 113

1.3 Transport Issues in Nitride Device 115

1.4 Polar Materials: Use in Sensor Technology-Potential of Merging Polar Materials with Semiconductors 115

2 Theoretical Approach 117

2.1 Polarization by Strain 117

2.2 Vertical Junction Transport 119

2.3 Lateral Transport in Undoped HEMTs 123

2.4 k [middle dot] p Method for Strained Nitride Quantum Wells and Quantum Dots 127

3 Tailoring of Vertical Junctions 128

3.1 Gate Leakage Suppression 129

3.2 Forming Ohmic Contacts by Using Polarization Effects 132

4 Nitride HFETS: Transport Issues 134

4.1 Nonlinear Access Resistance and GaN Device Operation 135

4.2 Scaling Issues in Nitride HEMTs 139

5 Smart HFETs: Multi-Functional Devices 142

5.1 Stress and Strain Calculation 145

5.2 Pyroelectricity 146

5.3 Strain Sensor FETs: Results 147

5.4 Thermal Sensor FETs 150

5.5 Effects of Defects 152

Polarization Effects on Low-Field Transport & Mobility in III-V Nitride HEMTs / Debdeep Jena 161

2 Polarization-Induced 2DEGs in AlGaN/GaN HEMTs 163

2.1 Polarization Effects on Charge Transport and Scattering 163

2.2 Charge Control 164

2.3 Survey of Experimental 2DEG Mobility Data 169

2.4 Theoretical Tools to Address AlGaN/GaN 2DEG Mobilities 171

3 Scattering Mechanisms 171

3.1 Typical AlGaN/GaN 2DEG Structures 171

3.2 Traditional Scattering Mechanisms 172

3.3 Novel Scattering Mechanisms in AlGaN/GaN 2DEGs 182

4 Using Theory to Explain Experimental Data 194

6 Appendix on the Theory of Low-Field Transport & Mobility 198

6.1 The Boltzmann Transport Equation 199

6.2 Mobility-Basic Theory 203

6.3 Statistics for Two- and Three-Dimensional Carriers 206

6.4 Screening by Two- and Three-Dimensional Carriers 207

6.5 Mobility of 2DEGs 208

6.6 Material Properties of III-V Nitrides Relevant to Transport 211

Local Polarization Effects in Nitride Heterostructures and Devices / E. T. Yu, P. M. Asbeck 217

1.1 Basic Physics of Polarization Effects 217

1.2 Experimental Determination of Polarization Charge Densities 219

1.3 Consequences for Heterostructures, Defects, and Devices 224

2 Polarization-Based Engineering of Nitride Heterostructures 225

2.1 Enhancement of Schottky Barrier Height in HFET Structures 229

2.2 Polarization-Based Energy Barrier Engineering 230

2.3 Residual Stress and Piezoelectric Effects in GaN HFETs 235

2.4 Polarization Effects in Nitride-Based HBTs and p-Type Structures 238

3 Localized Effects of Polarization 243

3.1 Dislocation-induced Polarization Fields 244

3.2 Scanning Capacitance Microscopy 245

3.3 Threshold Voltage Variations in AlGaN/GaN HEMT Structures 246

3.4 Nanoscale Electronic Structure in InGaN/GaN Quantum Wells 251

Polarization in Wide Bandgap Semiconductors and their Characterization by Scanning Probe Microscopy / Goutam Koley, MVS Chandrashekhar, Chistopher I. Thomas, Michael G. Spencer 265

1.1 Polarization in III-N 266

1.2 Polarization in Silicon Carbide 268

2 III-N and SiC Heterostructures 269

2.1 III-N Based Heterostructures 269

2.2 SiC Based Heteropolytype Structures 271

3 Interface and Surface Charge in SiC and III-N Heterojunctions 274

3.1 Charges at the Interface and Surface 274

3.2 Surface States and Their Significance 284

4 SPM Characterization of Heterostructures 285

4.1 Basics of Kelvin Probe Microscopy 286

4.2 Characterization of Charge Instability 287

4.3 Surface States Characterization and Passivation 299

Functionally Graded Polar Heterostructures: New Materials for Multifunctional Devices / Debdeep Jena, S. Pamir Alpay, Joseph V. Mantese 307

2 Graded Polar Nitride Semiconductor Heterostructures 308

2.1 Polarization in Nitrides: A Tutorial 308

2.2 Electrostatics and Dipole-Engineering 321

2.3 Epitaxial Growth and Structural Properties 324

2.4 Electronic Properties 326

2.5 Transport Properties of Polarization-induced 3D Electron Slabs 328

2.6 Quantum Magnetotransport Properties 333

2.7 Device Applications of Polarization-'Doped' Graded Nitride Layers 340

3 Universal Physics of Functionally Graded Ferroelectric and Ferromagnetic Alloys 345

3.1 Order Parameters in Ferroic (Ferroelectric, Ferromagnetic, & Ferroelastic) Materials 345

3.2 Functionally Graded Electrets and Magnets 352

3.3 Functionally Graded Ferromagnets 366

Polarization in GaN Based Heterostructures and Heterojunction Field Effect Transistors (HFETs) / Hadis Morkoc, Jacob Leach 373

1 Heterojunction Field Effect Transistors (HFETs) 376

1.1 Polarization Issues as Pertained to HFETs 379

1.2 Analytical Description of HFETs 397

1.3 Numerical Modeling of Sheet Charge and Current 409

1.4 Calculated I-V Characteristics 418

1.5 Experimental Considerations 419

2 AlGaN/GaN HFET Performance 424

2.1 Evolution of GaN FET Performance 430

2.2 Drain Voltage and Drain Breakdown Mechanisms 442

2.3 Anomalies in GaN MESFETs and AlGaN/GaN HFETs 453

Effects of Polarization in Optoelectronic Quantum Structures / Raphael Butte, Nicolas Grandjean 467

2 Basic Elements of the Theory of Polarization in III-V Nitride Heterostructures 468

2.1 The Wurtzite Structure 469

2.2 Strain and Internal Electric Field in III-Nitride Heterostructures 470

2.3 Effects of Polarization Fields on Optical Properties of III-V Nitride Quantum Heterostructures 484

3 Experimental Manifestation of Polarization Fields in Group-III Nitride Based Nanostructures 494

3.1 Experimental Evidence of Polarization Fields 494

3.2 Polarization Field Measurement 496

3.3 Optical Properties of GaN/AlGaN Quantum Wells 498

3.4 Optical Properties of GaN/AlN Quantum Dots 502

3.5 InGaN/GaN Quantum Wells: The Heart of Nitride Based Optoelectronic Devices 504.

ISBN:

9780387368313

0387368310

OCLC:

86167045