Springer handbook of electronic and photonic materials / Safa Kasap, Peter Capper (Eds.).

Format:

Book

Contributor:

Kasap, Safa.

Capper, Peter

Rosengarten Family Fund.

Language:

English

Subjects (All):

Electronics--Materials--Handbooks, manuals, etc.

Electronics.

Photonics--Materials--Handbooks, manuals, etc.

Photonics.

Photonics--Materials.

Electronics--Materials.

Genre:

Handbooks and manuals.

Physical Description:

xxxii, 1406 pages : illustrations ; 25 cm + 1 CD-ROM (4 3/4 in.)

Place of Publication:

New York : Springer, [2006]

System Details:

System requirements: Windows 95/98/ME 32 MB RAM, Windows NT 4/2000/XP 64 MB RAM; MAC OS 9 or higher, 64 MB RAM, 333 MHz; LINUX Pentium I/166 MHz, 64MB RAM.

Summary:

The Springer Handbook of Electronic and Photonic Materials has been prepared to give a broad coverage of a wide range of electronic and photonic materials, starting from fundamentals and building up to a advanced topics and applications. Its wide coverage with clear illustrations and applications as well as its chapter sequencing and logical flow make it very different from other electronics materials handbooks. Each chapter has been prepared either by experts in the field or instructors who have been teaching the subject at a university or in corporate laboritories.

The Handbook provides an accessible treatment of the material by developing the subject matter in easy steps and in a logical flow. Whatever possible, the sections have been logically sequenced to allow a partial coverage at the beginning of the chapter for those who only need a quick overview of the subject. Additional valuable features include the practical applications used as examples, details on experimental techniques, useful tables that summarize equations, and, most importantly, properties of various materials. The handbook also includes an extensive glossary at the end, which will be very helpful to those readers whose background may not be directly in the materials field.

Key Topics: Fundamental Electronic, Optical, and Magnetic Properties, Materials Growth and Characterization, Materials for Electronics, Materials for Optoelectronics and Photonics, Novel Materials, Selected Applications.

Features: Contains over 900 two-color illustrations, Includes over 150 comprehensive tables summarizing equations, experimental techniques and properties of various materials, Emphasizes physical concepts over extensive mathematical derivations, Parts and chapters with summaries, detailed index and fully searchable CD-ROM guarantee quick access to data and links to other sources, Delivers a wealth of up-to-date references, Incorporates a detailed Glossary of Terms.

Contents:

1 Perspectives on Electronic and Optoelectronic Materials 3

1.1 The Early Years 4

1.2 The Silicon Age 4

1.3 The Compound Semiconductors 8

1.4 From Faraday to Today 14

Part A Fundamental Properties

2 Electrical Conduction in Metals and Semiconductors 19

2.1 Fundamentals: Drift Velocity, Mobility and Conductivity 20

2.2 Matthiessen's Rule 22

2.3 Resistivity of Metals 23

2.4 Solid Solutions and Nordheim's Rule 26

2.5 Carrier Scattering in Semiconductors 28

2.6 The Boltzmann Transport Equation 29

2.7 Resistivity of Thin Polycrystalline Films 30

2.8 Inhomogeneous Media. Effective Media Approximation 32

2.9 The Hall Effect 35

2.10 High Electric Field Transport 37

2.11 Avalanche 38

2.12 Two-Dimensional Electron Gas 39

2.13 One Dimensional Conductance 41

2.14 The Quantum Hall Effect 42

3 Optical Properties of Electronic Materials: Fundamentals and Characterization 47

3.1 Optical Constants 47

3.2 Refractive Index 50

3.3 Optical Absorption 53

3.4 Thin Film Optics 70

3.5 Optical Materials 74

4 Magnetic Properties of Electronic Materials 79

4.1 Traditional Magnetism 81

4.2 Unconventional Magnetism 93

5 Defects in Monocrystalline Silicon 101

5.1 Technological Impact of Intrinsic Point Defects Aggregates 102

5.2 Thermophysical Properties of Intrinsic Point Defects 103

5.3 Aggregates of Intrinsic Point Defects 104

5.4 Formation of OSF Ring 115

6 Diffusion in Semiconductors 121

6.2 Diffusion Mechanisms 122

6.3 Diffusion Regimes 123

6.4 Internal Electric Fields 126

6.5 Measurement of Diffusion Coefficients 126

6.6 Hydrogen in Semiconductors 127

6.7 Diffusion in Group IV Semiconductors 128

6.8 Diffusion in III-V Compounds 130

6.9 Diffusion in II-VI Compounds 131

7 Photoconductivity in Materials Research 137

7.1 Steady State Photoconductivity Methods 138

7.2 Transient Photoconductivity Experiments 142

8 Electronic Properties of Semiconductor Interfaces 147

8.1 Experimental Database 149

8.2 IFIGS-and-Electronegativity Theory 153

8.3 Comparison of Experiment and Theory 155

9 Charge Transport in Disordered Materials 161

9.1 General Remarks on Charge Transport in Disordered Materials 163

9.2 Charge Transport in Disordered Materials via Extended States 167

9.3 Hopping Charge Transport in Disordered Materials via Localized States 169

10 Dielectric Response 187

10.1 Definition of Dielectric Response 188

10.2 Frequency-Dependent Linear Responses 190

10.3 Information Contained in the Relaxation Response 196

10.4 Charge Transport 208

10.5 A Few Final Comments 211

11 Ionic Conduction and Applications 213

11.1 Conduction in Ionic Solids 214

11.2 Fast Ion Conduction 216

11.3 Mixed Ionic-Electronic Conduction 221

11.4 Applications 223

11.5 Future Trends 226

Part B Growth and Characterization

12 Bulk Crystal Growth - Methods and Materials 231

12.1 History 232

12.2 Techniques 233

12.3 Materials Grown 240

13 Single-Crystal Silicon: Growth and Properties 255

13.2 Starting Materials 257

13.3 Single-Crystal Growth 258

13.4 New Crystal Growth Methods 266

14 Epitaxial Crystal Growth: Methods and Materials 271

14.1 Liquid-Phase Epitaxy (LPE) 271

14.2 Metalorganic Chemical Vapor Deposition (MOCVD) 280

14.3 Molecular Beam Epitaxy (MBE) 290

15 Narrow-Bandgap II-VI Semiconductors: Growth 303

15.1 Bulk Growth Techniques 304

15.2 Liquid-Phase Epitaxy (LPE) 308

15.3 Metalorganic Vapor Phase Epitaxy (MOVPE) 312

15.4 Molecular Beam Epitaxy (MBE) 317

15.5 Alternatives to CMT 320

16 Wide-Bandgap II-VI Semiconductors: Growth and Properties 325

16.1 Crystal Properties 326

16.2 Epitaxial Growth 328

16.3 Bulk Crystal Growth 333

17 Structural Characterization 343

17.1 Radiation-Material Interactions 344

17.2 Particle-Material Interactions 345

17.3 X-Ray Diffraction 348

17.4 Optics, Imaging and Electron Diffraction 351

17.5 Characterizing Functional Activity 362

17.6 Sample Preparation 362

17.7 Case Studies - Complementary Characterization of Electronic and Optoelectronic Materials 364

18 Surface Chemical Analysis 373

18.1 Electron Spectroscopy 373

18.2 Glow-Discharge Spectroscopies (GDOES and GDMS) 376

18.3 Secondary Ion Mass Spectrometry (SIMS) 377

19 Thermal Properties and Thermal Analysis: Fundamentals, Experimental Techniques and Applications 385

19.1 Heat Capacity 386

19.2 Thermal Conductivity 391

19.3 Thermal Expansion 396

19.4 Enthalpic Thermal Properties 398

19.5 Temperature-Modulated DSC (TMDSC) 403

20 Electrical Characterization of Semiconductor Materials and Devices 409

20.1 Resistivity 410

20.2 Hall Effect 418

20.3 Capacitance-Voltage Measurements 421

20.4 Current-Voltage Measurements 426

20.5 Charge Pumping 428

20.6 Low-Frequency Noise 430

20.7 Deep-Level Transient Spectroscopy 434

Part C Materials for Electronics

21 Single-Crystal Silicon: Electrical and Optical Properties 441

21.1 Silicon Basics 441

21.2 Electrical Properties 451

21.3 Optical Properties 472

22 Silicon-Germanium: Properties, Growth and Applications 481

22.1 Physical Properties of Silicon-Germanium 482

22.2 Optical Properties of SiGe 488

22.3 Growth of Silicon-Germanium 492

22.4 Polycrystalline Silicon-Germanium 494

23 Gallium Arsenide 499

23.1 Bulk Growth of GaAs 502

23.2 Epitaxial Growth of GaAs 507

23.3 Diffusion in Gallium Arsenide 511

23.4 Ion Implantation into GaAs 513

23.5 Crystalline Defects in GaAs 514

23.6 Impurity and Defect Analysis of GaAs (Chemical) 517

23.7 Impurity and Defect Analysis of GaAs (Electrical) 518

23.8 Impurity and Defect Analysis of GaAs (Optical) 521

23.9 Assessment of Complex Heterostructures 522

23.10 Electrical Contacts to GaAs 524

23.11 Devices Based on GaAs (Microwave) 524

23.12 Devices based on GaAs (Electro-optical) 527

23.13 Other Uses for GaAs 532

24 High-Temperature Electronic Materials: Silicon Carbide and Diamond 537

24.1 Material Properties and Preparation 540

24.2 Electronic Devices 547

25 Amorphous Semiconductors: Structure, Optical, and Electrical Properties 565

25.1 Electronic States 565

25.2 Structural Properties 568

25.3 Optical Properties 570

25.4 Electrical Properties 573

25.5 Light-Induced Phenomena 575

25.6 Nanosized Amorphous Structure 577

26 Amorphous and Microcrystalline Silicon 581

26.1 Reactions in SiH[subscript 4] and SiH[subscript 4]/H[subscript 2] Plasmas 581

26.2 Film Growth on a Surface 583

26.3 Defect Density Determination for a-Si:H and [Mu]c-Si:H 589

26.4 Device Applications 590

26.5 Recent Progress in Material Issues Related to Thin-Film Silicon Solar Cells 591

27 Ferroelectric Materials 597

27.1 Ferroelectric Materials 601

27.2 Ferroelectric Materials Fabrication Technology 608

27.3 Ferroelectric Applications 616

28 Dielectric Materials for Microelectronics 625

28.1 Gate Dielectrics 630

28.2 Isolation Dielectrics 647

28.3 Capacitor Dielectrics 647

28.4 Interconnect Dielectrics 651

29 Thin Films 659

29.1 Deposition Methods 661

29.2 Structure 682

29.3 Properties 692

30 Thick Films 717

30.1 Thick Film Processing 718

30.2 Substrates 720

30.3 Thick Film Materials 721

30.4 Components and Assembly 724

30.5 Sensors 728

Part D Materials for Optoelectronics and Photonics

31 III-V Ternary and Quaternary Compounds 735

31.2 Interpolation Scheme 736

31.3 Structural Parameters 737

31.4 Mechanical, Elastic and Lattice Vibronic Properties 739

31.5 Thermal Properties 741

31.6 Energy Band Parameters 743

31.7 Optical Properties 748

31.8 Carrier Transport Properties 750

32 Group III Nitrides 753

32.1 Crystal Structures of Nitrides 755

32.2 Lattice Parameters of

Nitrides 756

32.3 Mechanical Properties of Nitrides 757

32.4 Thermal Properties of Nitrides 761

32.5 Electrical Properties of Nitrides 766

32.6 Optical Properties of Nitrides 777

32.7 Properties of Nitride Alloys 791

33 Electron Transport Within the III-V Nitride Semiconductors, GaN, AIN, and InN: A Monte Carlo Analysis 805

33.1 Electron Transport Within Semiconductors and the Monte Carlo Simulation Approach 806

33.2 Steady-State and Transient Electron Transport Within Bulk Wurtzite GaN, AIN, and InN 810

33.3 Electron Transport Within III-V Nitride Semiconductors: A Review 822

34 II-IV Semiconductors for Optoelectronics: CdS, CdSe, CdTe 829

34.2 Solar Cells 829

34.3 Radiation Detectors 834

35 Doping Aspects of Zn-Based Wide-Band-Gap Semiconductors 843

35.1 ZnSe 843

35.2 ZnBeSe 848

35.3 ZnO 849

36 II-VI Narrow-Bandgap Semiconductors for Optoelectronics 855

36.1 Applications and Sensor Design 858

36.2 Photoconductive Detectors in HgCdTe and Related Alloys 860

36.3 Sprite Detectors 864

36.4 Photoconductive Detectors in Closely Related Alloys 866

36.5 Conclusions on Photoconductive HgCdTe Detectors 867

36.6 Photovoltaic Devices in HgCdTe 867

36.7 Emission Devices in II-VI Semiconductors 882

36.8 Potential for Reduced-Dimensionality HgTe-CdTe 883

37 Optoelectronic Devices and Materials 887

37.2 Light-Emitting Diodes and Semiconductor Lasers 890

37.3 Single-Mode Lasers 904

37.4 Optical Amplifiers 906

37.5 Modulators 907

37.6 Photodetectors 911

38 Liquid Crystals 917

38.2 The Basic Physics of Liquid Crystals 924

38.3 Liquid-Crystal Devices 931

38.4 Materials for Displays 940

39 Organic Photoconductors 953

39.1 Chester Carlson and Xerography 954

39.2 Operational Considerations and Critical Materials Properties 956

39.3 OPC Characterization 965

39.4 OPC Architecture and Composition 967

39.5 Photoreceptor Fabrication 976

40 Luminescent Materials 983

40.1 Luminescent Centres 985

40.2 Interaction with the Lattice 987

40.3 Thermally Stimulated Luminescence 989

40.4 Optically (Photo-)Stimulated Luminescence 990

40.5 Experimental Techniques - Photoluminescence 991

40.6 Applications 992

40.7 Representative Phosphors 995

41 Nano-Engineered Tunable Photonic Crystals in the Near-IR and Visible Electromagnetic Spectrum 997

41.1 PC Overview 998

41.2 Traditional Fabrication Methodologies for Static PCs 1001

41.3 Tunable PCs 1011

42 Quantum Wells, Superlattices, and Band-Gap Engineering 1021

42.1 Principles of Band-Gap Engineering and Quantum Confinement 1022

42.2 Optoelectronic Properties of Quantum-Confined Structures 1024

42.3 Emitters 1032

42.4 Detectors 1034

42.5 Modulators 1036

42.6 Future Directions 1037

43 Glasses for Photonic Integration 1041

43.1 Main Attributes of Glasses as Photonic Materials 1042

43.2 Glasses for Integrated Optics 1050

43.3 Laser Glasses for Integrated Light Sources 1053

44 Optical Monlinearity in Photonic Glasses 1063

44.1 Third-Order Nonlinearity in Homogeneous Glass 1064

44.2 Second-Order Nonlinearity in Poled Glass 1069

44.3 Particle-Embedded Systems 1070

44.4 Photoinduced Phenomena 1071

45 Nonlinear Optoelectronic Materials 1075

45.2 Illumination-Dependent Refractive Index and Nonlinear Figures of Merit (FOM) 1077

45.3 Bulk and Multi-Quantum-Well (MQW) Inorganic Crystalline Semiconductors 1080

45.4 Organic Materials 1084

45.5 Nanocrystals 1087

45.6 Other Nonlinear Materials 1088

Part E Novel Materials and Selected Applications

46 Solar Cells and Photovoltaics 1095

46.1 Figures of Merit for Solar Cells 1096

46.2 Crystalline Silicon 1098

46.3 Amorphous Silicon 1100

46.4 GaAs Solar Cells 1101

46.5 CdTe Thin-Film Solar Cells 1102

46.6 CulnGaSe[subscript 2] (CIGS) Thin-Film Solar Cells 1103

47 Silicon on Mechanically Flexible Substrates for Large-Area Electronics 1107

47.1 a-Si:H TFTs on Flexible Substrates 1108

47.2 Field-Effect Transport in Amorphous Films 1108

47.3 Electronic Transport Under Mechanical Stress 1113

48 Photoconductors for X-Ray Image Detectors 1121

48.1 X-Ray Photoconductors 1123

48.2 Metrics of Detector Performance 1131

49 Phase-Change Optical Recording 1139

49.1 Digital Versatile Discs (DVDs) 1140

49.2 Super-RENS Discs 1144

49.3 In Lieu of Conclusion 1145

50 Carbon Nanotubes and Bucky Materials 1147

50.1 Carbon Nanotubes 1147

50.2 Bucky Materials 1153

51 Magnetic Information-Storage Materials 1155

51.1 Magnetic Recording Technology 1156

51.2 Magnetic Random-Access Memory 1185

51.3 Extraordinary Magnetoresistance (EMR) 1189

52 High-Temperature Superconductors 1193

52.1 The Superconducting State 1195

52.2 Cuprate High-T[subscript c] Superconductors: An Overview 1202

52.3 Physical Properties of Cuprate Superconductors 1207

52.4 Superconducting Films 1212

52.5 The Special Case of MgB[subscript 2] 1214

53 Molecular Electronics 1219

53.1 Electrically Conductive Organic Compounds 1220

53.2 Materials 1223

53.3 Plastic Electronics 1225

53.4 Molecular-Scale Electronics 1229

53.5 DNA Electronics 1235

54 Organic Materials for Chemical Sensing 1241

54.1 Analyte Requirements 1242

54.2 Brief Review of Inorganic Materials 1243

54.3 Macrocylic Compounds for Sensing 1245

54.4 Sensing with Phthalocyanine and Porphyrin 1250

54.5 Polymeric Materials 1255

54.6 Cavitand Molecules 1259

55 Packaging Materials 1267

55.1 Package Applications 1268

55.2 The Materials Challenge of Electronic Packaging 1269

55.3 Materials Coefficient of Thermal Expansion 1272

55.4 Wirebond Materials 1272

55.5 Solder Interconnects 1273

55.6 Substrates 1278

55.7 Underfill and Encapsulants 1280

55.8 Electrically Conductive Adhesives (ECAs) 1281

55.9 Thermal Issues 1283

Detailed Contents 1307.

Notes:

Includes bibliographical references and index.

Local Notes:

Acquired for the Penn Libraries with assistance from the Rosengarten Family Fund.

ISBN:

0387260595

9780387260594

OCLC:

62230082

Publisher Number:

9780387260594