Pixel detectors : from fundamentals to applications / Leonardo Rossi ... [and others].

Format:

Book

Contributor:

Rossi, Leonardo.

Series:

Particle acceleration and detection

Particle acceleration and detection, 1611-1052

Language:

English

Subjects (All):

Nuclear counters.

Physical Description:

x, 304 pages : illustrations ; 24 cm.

Place of Publication:

Berlin ; New York : Springer, 2006.

Summary:

Pixel detectors are an increasingly important class of particle and radiation-detection devices, with a broad spectrum of applications ranging from high-energy physics to biomedicine and material sciences. Thanks to their capability to detect x-rays, pixel detectors are finding an increasing number of applications in areas beyond particle physics.

This book is a general-purpose introduction to the fundamental principles of semiconductor-based hybrid-pixel devices. The various aspects of the pixel-detector technology are addressed and examples of existing pixel systems and applications are presented. Pixel Detectors is therefore of benefit to all scientists and engineers working in the field of particle detectors and instrumentation.

Contents:

1.1 Generalities on Pixel Detectors 1

1.1.1 Motivations for Pixel Detectors in Particle Physics 2

1.1.2 Working Principle and Operating Characteristics of Segmented Silicon Detectors 5

1.1.3 Hybrid Pixel Detectors 9

1.1.4 Monolithic Pixel Detectors 12

1.2 Evolution of Pixel Detectors in Particle Physics 13

1.2.1 The First Pixel Detectors and Their Use in Experiments 16

1.2.2 Other Applications 23

2 The Sensor 25

2.2 Device Physics and Fundamental Sensor Properties 26

2.2.1 Carrier Concentration 26

2.2.2 Charge Generation and Recombination in Silicon 29

2.2.3 Transport of Charge Carriers 37

2.2.4 The pn-Junction 40

2.2.5 Surface Barrier 44

2.2.6 Metal Oxide Semiconductor Structure 46

2.2.7 Punch Through 48

2.3 Pixel Sensors and Their Properties 50

2.3.1 Different Types of Silicon Sensors 50

2.3.2 Leakage Current and Maximum Operation Voltage 51

2.3.3 Full Depletion Voltage and Substrate Doping 53

2.3.4 Pixel Capacitance 57

2.3.5 Charge Motion and Signal Formation 59

2.3.6 Spatial Resolution 61

2.3.7 Radiation Hardness 67

2.4 Radiation-Induced Effects on Silicon 68

2.4.1 Bulk Damage 68

2.4.2 Surface Effects 80

2.5 Sensor Concepts 81

2.5.1 Overview of Sensor Types 82

2.5.2 p[superscript +] in n: Low-Cost Solution for Applications in a Low- or Medium-Radiation Environment 85

2.5.3 n[superscript +] in n: Solution for Applications in a High-Radiation Environment 97

2.6 Processing of Silicon Wafers 110

2.6.1 Production and Cleaning of Silicon 111

2.6.2 Thermal Oxidation 113

2.6.3 Layer Deposition 113

2.6.4 Photolithographic Steps 114

2.6.5 Etching 115

2.6.6 Doping 116

2.6.7 Metallization 118

2.6.8 Example of a Process Sequence 118

2.7 Detector Materials Other Than Silicon 121

2.7.1 Gallium Arsenide 122

2.7.2 CdTe and CdZnTe 124

2.7.3 Diamond 125

3 The Front-End Electronics 129

3.1.1 Generic Pixel Chip 130

3.1.2 Simple Sensor Model 133

3.1.3 Generic PUC 135

3.1.4 Module Controller Chips 143

3.2 Design Aspects 144

3.2.1 Typical Specifications 145

3.2.2 Radiation-Tolerant Design 154

3.2.3 Cross Talk 157

3.2.4 Testability and Ease of Operation 160

3.3 Analog Signal Processing 161

3.3.1 Charge Amplification 162

3.3.2 Feedback and Leakage Compensation 163

3.3.3 Hit Discrimination 168

3.3.4 Threshold Trim 170

3.3.5 Noise in a Simple FET Amplifier 171

3.3.6 Noise in Charge Amplifier/Shaper Combination 178

3.3.7 FET Preamplifer 183

3.3.8 Bipolar Amplifier 184

3.4 Readout Architectures 187

3.4.1 Chips Without Data Buffering 188

3.4.2 Chips with Zero Suppression and Data Buffering 188

3.4.3 Counting Chips 197

4 Integration and System Aspects 201

4.2 Modules 202

4.3 Bump Bonding 203

4.3.1 Solder Bumping and Bonding Process 204

4.3.2 Indium Bump-Bonding Process 206

4.3.3 Gold-Stud Bump-Bonding Process 210

4.3.4 Quality Control of Bump-Bonded Assemblies 212

4.3.5 Rework of Bump-Bonded Assemblies 213

4.3.6 Thinning of Electronics Wafers 214

4.4 "Dressing" the Modules 214

4.4.1 Flex Hybrid 215

4.4.2 Multichip Module Deposited 216

4.5 Support Mechanics and Cooling 218

4.5.1 Mechanical Supports 219

4.5.2 Cooling 220

4.6 Power and Signal Interconnect in High-Luminosity Colliders 222

4.7 Operation in High-Radiation Environment 223

5 Pixel Detector Applications 225

5.1 Pixel Detectors for High-Luminosity Collider Experiments 225

5.2 Large Systems in Construction 231

5.2.1 ATLAS 232

5.2.2 CMS 237

5.2.3 ALICE 241

5.2.4 BTeV 243

5.3 Pixel Detectors for Imaging Applications 246

5.4 Pixel Imaging Systems in Operation 250

5.4.1 Counting Pixels for Radiography 251

5.4.2 Pixel Detectors for Protein Crystallography with Synchrotron Radiation 254

5.4.3 Autoradiography with Pixel Detectors 256

6 Trends and New Developments for Pixel Detectors 261

6.2 Limitations and Prospects of the Hybrid Pixel Technology 262

6.2.1 MCM-D Integration 263

6.2.2 Interleaved Hybrid Pixels 265

6.2.3 Active Edge Three-Dimensional Silicon Pixel Detectors 267

6.3 Monolithic and Semimonolithic Pixel Detectors 269

6.3.1 Monolithic Pixels on Bulk Silicon 271

6.3.2 Monolithic CMOS Pixels 272

6.3.3 Monolithic SOI Pixels 276

6.3.4 Amorphous Silicon above CMOS Pixel Electronics 277

6.3.5 DEPFET Pixels 278.

Notes:

Includes bibliographical references ( pages [289]-300) and index.

ISBN:

3540283323

OCLC:

63514141

Publisher Number:

9783540283324