Nanoscale transistors : device physics, modeling and simulation / Mark Lundstrom.

Format:

Book

Author/Creator:

Lundstrom, Mark.

Language:

English

Subjects (All):

Transistors.

Nanotechnology.

Physical Description:

vi, 217 pages : illustrations ; 25 cm

Place of Publication:

New York ; London : Springer, 2005.

Summary:

Nanoscale Transistors: Device Physics, Modeling and Simulation describes the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working with nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. Chapter 1 reviews some basic concepts, and Chapter 2 summarizes the essentials of traditional semiconductor devices, digital circuits, and systems. This material provides a baseline against which new devices can be assessed. Chapters 3 and 4 present a non-traditional view of the MOSFET using concepts that are valid at nanoscale. Chapter 5 applies the same concepts to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. Chapter 6 explores the limits of devices by discussing conduction in single molecules.

The book is a useful reference for senior-level or graduate-level courses on nanoelectronics, modeling and simulation. It is also valuable to scientists and engineers who are pushing MOSFETs to their limits and developing revolutionary nanoscale devices.

Contents:

1.2 Distribution functions 1

1.3 3D, 2D, and 1D Carriers 3

1.4 Density of states 7

1.5 Carrier densities 8

1.6 Directed moments 10

1.7 Ballistic transport: semiclassical 12

1.8 Ballistic transport: quantum 16

1.9 The NEGF formalism 21

1.10 Scattering 25

1.11 Conventional transport theory 26

1.12 Resistance of a ballistic conductor 31

1.13 Coulomb blockade 33

2) Devices, Circuits and Systems 39

2.2 The MOSFET 40

2.3 1D MOS Electrostatics 45

2.4 2D MOS Electrostatics 54

2.5 MOSFET Current-Voltage Characteristics 61

2.6 The bipolar transistor 67

2.7 CMOS Technology 69

2.8 Ultimate limits 75

3) The Ballistic Nanotransistors 83

3.2 Physical view of the nanoscale MOSFETs 86

3.3 Natori's theory of the ballistic MOSFET 91

3.4 Nondegenerate, degenerate, and general carrier statistics 94

3.4.1 The ballistic MOSFET (nondegenerate conditions) 94

3.4.2 The ballistic MOSFET (T[subscript L] = 0, degenerate conditions) 97

3.4.3 The ballistic MOSFET (general conditions) 103

3.5 Beyond the Natori model 105

3.5.1 Role of the quantum capacitance 105

3.5.2 Two dimensional electrostatics 108

4) Scattering Theory of the MOSFET 115

4.2 MOSFET physics in the presence of scattering 117

4.3 The scattering model 120

4.4 The transmission coefficient under low drain bias 126

4.5 The transmission coefficient under high drain bias 129

5) Nanowire Field-Effect Transistors 140

5.2 Silicon nanowire MOSFETs 140

5.2.1 Evaluation of the I-V characteristics 143

5.2.2 The I-V characteristics for nondegenerate carrier statistics 143

5.2.3 The I-V characteristics for degenerate carrier statistics 145

5.2.4 Numerical results 147

5.3 Carbon nanotubes 153

5.4 Bandstructure of carbon nanotubes 155

5.4.1 Bandstructure of graphene 155

5.4.2 Physical structure of nanotubes 158

5.4.3 Bandstructure of nanotubes 160

5.4.4 Bandstructure near the Fermi points 165

5.5 Carbon nanotube FETs 169

5.6 Carbon nanotube MOSFETs 171

5.7 Schottky barrier carbon nanotube FETs 173

6) Transistors at the Molecular Scale 182

6.2 Electronic conduction in molecules 183

6.3 General model for ballistic nanotransistors 187

6.4 MOSFETs with 0D, 1D, and 2D channels 193

6.5 Molecular transistors? 196

6.6 Single electron charging 199

6.7 Single electron transistors 203.

ISBN:

0387280022

OCLC:

61756769