Superlattice to nanoelectronics / Raphael Tsu.

Format:

Book

Author/Creator:

Tsu, Raphael, 1932-

Language:

English

Subjects (All):

Superlattices as materials.

Quantum dots.

Physical Description:

xix, 325 pages : illustrations ; 25 cm

Edition:

First edition.

Place of Publication:

Amsterdam ; Boston : Elsevier, 2005.

Summary:

Superlattice to Nanoelectronics provides a historical overview of the early work performed by Tsu and Esaki, and introduces the subject to those who wish to enter into this area of nanoscience. It describes the fundamental concepts and answers many questions about 'Nanoelectronics' today. This book covers the applications and types of devices that have been produced, many of which are still in use today. This historical perspective is important as it offers an explanation as to how and why this scientific field has evolved, while new fundamental ideas are introduced and developed.

Contents:

Chapter 1 Superlattice

1.1 The Birth of the Man-Made Superlattice 1

1.2 A Model for the Creation of Man-Made Energy Bands 4

1.3 Transport Properties of a Superlattice 6

1.4 More Rigorous Derivation of the Negative Differential Conductance 6

1.5 Response of a Time-Dependent Electric Field 10

1.6 NDC from the Hopping Model and Electric Field Induced Localization 15

1.6.1 Two-Well Model 18

1.6.2 Effects of Finite Length 22

1.6.3 Origin of NDC from the Band Model and Hopping Model 25

1.7 Experiments 27

1.7.1 Domain Oscillation in a Superlattice 27

1.7.2 Experiments on the Stark Ladder 28

1.7.3 Comparison with Cyclotron Resonance 31

1.8 Type II Superlattice 33

1.8.1 Material Parameters for the In[subscript 1-x]Ga[subscript x]As/GaSb[subscript 1-y]As[subscript y] System 34

1.8.2 Kane k*p Two-Band Model 34

1.8.3 When Are the Full Bloch Waves Needed? 36

1.8.4 Type II Superlattice with the Kane Two Band Model 39

1.9 Physical Realization and Characterization of a Superlattice 44

1.9.1 First Attempt - GaAs/GaAsP Vapor Phase Epitaxy Superlattice 44

1.9.2 The GaAs/GaAlAs Superlattice: Determination of the Alloy Concentration 46

1.9.3 Other Structural Characterizations 52

Chapter 2 Resonant Tunneling Via Man-Made Quantum Well States

2.1 The Birth of Resonant Tunneling 57

2.2 Some Fundamentals 61

2.3 Conductance from the Tsu-Esaki Formula 66

2.4 Tunneling Time from the Time-Dependent Schrodinger Equation 67

2.4.1 Stevens' Problem 68

2.4.2 The Double Barrier Problem 69

2.4.3 Spreading of a Wave Trapped in a Well 72

2.4.4 The Series Expansion 74

2.4.5 Delay Time in DBRT 75

2.5 Damping in Resonant Tunneling 77

2.5.1 The Quality Factor Q 77

2.5.2 The Simplest Way to Account for Damping 77

2.5.3 Resonant Tunneling with Damping 79

2.5.4 Green's Function in a Damped Free Electron Schrodinger Equation 81

2.5.4.1 Relaxation Time 81

2.5.4.2 Spatial Damping with Langevin's Term 85

2.5.5 Green's Function for Damped Quantum Well Structures 87

2.5.5.1 Another Look at the Free Particle Green's Function 88

2.5.5.2 Reflection from a Barrier 88

2.5.5.3 The Method of Phase 90

2.5.5.4 Green's Function for an Isolated Quantum Well 90

2.5.5.6 Another Possible Equation for Spatial Damping 93

2.5.6 Approximation Method for Linewidth and Level Shift Using Q 94

2.6 Very Short l and w for an Amorphous Quantum Well 97

2.7 Self-Consistent Potential Correction of DBRT 100

2.8 Experimental Confirmation of Resonant Tunneling 103

2.9 Instability in RTD 106

2.9.1 The Goldman-Tsui-Cunningham Instability 106

2.9.2 Decoupling of the Two Barriers by an Excitation within the Well 110

Chapter 3 Optical Properties and Raman Scattering in Man-Made Quantum Systems

3.1 Optical Absorption in a Superlattice 117

3.2 Photoconductivity in a Superlattice 123

3.3 Raman Scattering in a Superlattice and Quantum Well 126

3.3.1 Some Fundamentals 128

3.3.2 Phonons and Polariton Modes in a Superlattice 129

3.3.3 Calculation of Raman Scattering in a Superlattice and Surface Quantization 132

3.3.3.1 Superlattice 132

3.3.3.2 Surface Quantization 135

3.3.4 Experimental Confirmation of Zone-Folding 138

3.3.4.1 Folded LA in Raman Scattering 138

3.3.4.2 Folded Optical Phonons in Raman Scattering 140

3.3.5 Raman Scattering from a Strain-Layer Superlattice (SLS) 141

Chapter 4 Dielectric Function and Doping of a Superlattice

4.1 Dielectric Function of a Superlattice and a Quantum Well 145

4.1.1 Longitudinal Dielectric Constants for Quantum Wells 145

4.1.2 Transverse Dielectric Constant of the GaAs/AlAs Superlattice 149

4.2 Doping a Superlattice 149

Chapter 5 Quantum Step and Activation Energy

5.1 Optical Properties of Quantum Steps 155

5.1.1 Density of States of a Quantum Step 155

5.1.2 Matrix Element Between the Valence and Conduction Bands 156

5.1.3 Electroreflectance from a Quantum Step 159

5.2 Determination of Activation Energy in Quantum Wells 160

Chapter 6 Semiconductor Atomic Superlattice (SAS)

6.1 Silicon-Based Quantum Wells 168

6.2 Si-Interface Adsorbed Gas (IAG) Superlattice 169

6.3 Amorphous Silicon/Silicon Oxide Superlattice 171

6.4 Silicon-Oxygen (Si-O) Superlattice 173

6.5 Estimate of the Band-Edge Alignment Using Atomic States 178

6.6 Estimate of the Band-Edge Alignment with HOMO-LUMO 179

6.7 Estimation of Strain from a Ball and Stick Model 180

6.7.1 Charge Transfer on Strain-Layer Epitaxy 185

6.7.2 Defects in the Si-O Superlattice 192

6.8 Electroluminescence and Photoluminescence 194

6.9 Transport through a Si-O Superlattice 198

6.10 Comparison of a Si-O Superlattice and a Ge-Si Monolayer Superlattice 201

Chapter 7 Si Quantum Dots

7.1 Energy States of Silicon Quantum Dots 207

7.2 Resonant Tunneling in Silicon Quantum Dots 213

7.3 Slow Oscillations and Hysteresis 220

7.4 Avalanche Multiplication from Resonant Tunneling 228

7.5 Influence of Light and Repeatability under Multiple Scans 232

Chapter 8 Capacitance, Dielectric Constant and Doping Quantum Dots

8.1 Capacitance of Silicon Quantum Dots 239

8.1.1 Electrostatics 240

8.1.2 Quantum Mechanical Calculation 241

8.1.3 Classical Calculation 243

8.1.4 Summary of Our Calculation 245

8.1.5 Comparison with Other Approaches 247

8.2 Dielectric Constant of a Silicon Quantum Dot 248

8.2.1 Size-Dependent [epsilon](a) 250

8.3 Doping a Silicon Quantum Dot 257

Chapter 9 Porous Silicon

9.1 Porous Silicon - Light Emitting Silicon 267

9.2 Porous Silicon - Other Applications 272

Chapter 10 Some Novel Devices

10.1 Cold Cathode 277

10.2 Saturation Intensity of PbS Quantum Dots 281

10.3 Multipole Electrode Heterojunction Hybrid Structures 285

10.3.1 Examples of Heterojunction Multipole Electrode Hybrid Structures 287

10.4 Some Fundamental Issues: Mainly Difficulties 289

10.5 Comments on Quantum Computing 291

Chapter 11 Quantum Impedance of Electrons

11.1 Landauer Conductance Formula 295

11.2 Electron Quantum Waveguide (EQW) 296

11.3 Wave Impedance of Electrons 300

11.3.1 Wave Impedance in a Solid with a Plane Wave in One Direction 300

11.3.2 Quantum Wave Impedance of Open and Closed Systems 302

11.3.3 Wave Impedance in Unbounded Space 306

11.3.4 Some Fundamental Issues in Quantum Systems 307

Chapter 12 Nanoelectronics: Where are You?.

Notes:

Includes bibliographical references and index.

ISBN:

008044377X

OCLC:

59081040