Advanced Metallization Conference 2000 (AMC 2000) : proceedings of the conference held October 2-5, 2000, in San Diego, California, U.S.A., and October 19-20, 2000, University of Tokyo, Tokyo, Japan / editors, Dan Edelstein ... [and others].

Format:

Book

Conference/Event

Contributor:

Edelstein, Daniel C.

University of California, Berkeley. Continuing Education in Engineering.

Conference Name:

Advanced Metallization Conference (2000 : San Diego, Calif.)

Series:

Materials Research Society conference proceedings 1048-0854

Materials Research Society conference proceedings, 1048-0854

Language:

English

Subjects (All):

Semiconductors--Design and construction--Congresses.

Semiconductors.

Semiconductors--Design and construction.

Integrated circuits--Ultra large scale integration--Materials--Congresses.

Integrated circuits.

Integrated circuits--Ultra large scale integration--Materials.

Integrated circuits--Ultra large scale integration.

Integrated circuits--Ultra large scale integration--Design and construction--Congresses.

Integrated circuits--Ultra large scale integration--Design and construction.

Thin films--Congresses.

Thin films.

Metallic films--Congresses.

Metallic films.

Metallizing--Congresses.

Metallizing.

Genre:

Conference papers and proceedings.

Physical Description:

706 pages : illustrations ; 24 cm.

Place of Publication:

Warrendale, Pa. : Materials Research Society, [2000]

Contents:

Perspectives

Cooperative R&D on Semiconductor Technology in Japan / Hiroyoshi Komiya 3

Performance

Clock Tree and Power Grid Design > 1 GHz / Phillip J. Restle, Albert Ruehli, Steven Walker 11

Characterization of Dual Damascene Cu-SiO[subscript 2] Interconnects in Time and Frequency Domains / C. Bermond, B. Flechet, V. Arnal, A. Farcy, J. Torres, Y. Morand, G. Le Carval, R. Salik, S. Bauzac, G. Angenieux 19

Technology and Design Challenges for Low Power and High Performance Microprocessors / Vivek De, Shekhar Borkar 25

The Comparison of NMOS Devices With Al Interconnect and Cu Interconnect / Mu-Kyeung Jung, Seong-Ho Liu, Jong-Hyon Ahn, Kyung-Tae Lee, Hee-Sung Kang, Young-Wug Kim, Kwang-Pyuk Suh 35

Strategy of Future ULSI Metallization / L.J. Chen, S.L. Cheng, L.W. Cheng 41

Interconnection from Design Perspective / Takayasu Sakurai 53

Chip-Level Performance Improvement Using Triple Damascene Wiring Design Concept for the Future CMOS Devices / Noriaki Oda 59

Cu/Low-k Integration

A Novel SiO[subscript 2]-Air Gap Low-k for Copper Dual Damascene Interconnect / Vincent Arnal, Joaquin Torres, Philippe Gayet, Michel Haond, Christophe Verove, Brigitte Descouts, Philippe Spinelli 71

Integration Issues of Low-k Materials in Damascene Structure / G. Passemard, O. Demolliens 77

Dual Damascene Integration of SiLK Semiconductor Dielectric / W. Mlynko, B. Havemann, D. Sesler, G. Rajagopalan, M. Daniels, M. Mills, L. Booms, E. Shafer 85

Dual Inlaid Copper and Fluorine-Doped TEOS BEOL Integration for a High-Performance 0.18 [mu]m Technology / M. Angyal, A. Anandakugan, B. Boeck, G. Braeckelmann, J. Brown, C. Capasso, R. Carter, R. Chowdhury, A. Das, D. Denning, S. Filipiak, P. Gilbert, C. Goldberg, H. Kawasaki, K. McGuffin, J. Mendonca, A. Michel, M. Moosa, R. Nelson, A. Nghiem, C. Pettinato, D. Rose, D. Smith, T. Sparks, T. Stephens, J. Sun, S. Thrasher, S. Veeraraghavan, H. Zawaideh 91

Cu Chemical and Electrochemical Processes

Effects of Copper Contamination by Copper Implantation Through the Backside of Wafer on MOS Device Performance / K.C. Tee, K. Prasad, C.S. Lee, H. Gong, L. Chan, A.K. See, C.L. Cha 105

Volume Production Copper Plating Control / Tom Ritzdorf 111

Development of New Chemistry for Copper Electroplating Process / Sun-Jung Lee, Kyu-Hwan Chang, Seung-Man Choi, Ki-Chul Park, Hyeon-Deok Lee, Ho-Kyu Kang, Joo-Tae Moon 121

Cu Corrosion Mechanisms and Control / Vlasta Brusic 127

An Alternative Metallic Seeding Technique for Subsequent Electrochemical Deposition of Copper Onto Barrier Metals / R. Fang, H. Gu, T.J. O'Keefe, M.J. O'Keefe, W-S. Shih, K.D. Leedy, R. Cortez 137

Direct Copper Electroplating / Yuri Lantasov, Roger Palmans, Karen Maex 145

Characterization of Cu Surface Cleaning by Downstream N[subscript 2]/H[subscript 2] Plasma / M.R. Baklanov, D.G. Shamiryan, G.P. Beyer, T. Conard, S. Vanhaelemeersch, K. Maex 153

Stress and Impurities in Electroplated Copper / S.H. Brongersma, E. Kerr, I. Vervoort, E. Richard, K. Maex 161

The Relation Between Self-Annealing Behavior and Microstructure of Electroplated Copper Films / Kyu-Hwan Chang, Sun-Jung Lee, Seung-Man Choi, Ki-Chul Park, Hyeon-Deok Lee, Ho-Kyu Kang, Joo-Tae Moon 167

In Situ STM Study of a Model Additive on Copper Single Crystal Surfaces / T. Dretschkow 173

Bath Additive Concentration Effects on Super-Filling for Copper Damascene Electroplating / Aaron Frank, Q.T. Jiang, Linlin Chen, Brad Carpenter, Ron Carpio, Tom Ritzdorf, Klaus Pfeifer 181

Kinetic Mechanism of Self-Annealing in Electroplated Copper Thin Films / Hee Dong Yang, Choong-Un Kim 187

Methodology of Quantitative Texture Analysis in Thin Films and Interconnects / K.J. Kozaczek, D.S. Kurtz, P.R. Moran, R. Martin, M.E. Gross, K. Evans-Lutterodt 193

Using SOM-Cu for ULSI Interconnections / Galif Kutluk, Hisashi Iwashige, Toshihiro Suzuki, Tomoyuki Abe, Shigeo Hayashi, Toshinobu Yoshida, Poong Kim, Masaaki Oda 199

Application of MESA Modeling for Chemical Mechanical Polishing / T. Laursen, S.R. Runnels, A. Toprac 205

Non-Contact, In-Line Process Monitoring of Cu Bond Pad Thickness and Dishing / Jon Madsen, Ji-Ping Li, Mira Bakshi, Peter Borden 211

Advanced Preclean Process for Cu Damascene Applications / R. Rozbicki, R. Powell, M. Khosla, E. Klawuhn, M. Danek, K. Pfeifer, H. Cox 217

Finite Element Analysis of CMP Pad Displacement and Slurry Flow Characteristics / Andrew T. Kim, John A. Tichy, Timothy S. Cale 223

Effect of Pd Catalyst Adsorption on Cu Filling Characteristics in Electroless Plating / S. Shingubara, T. Ida, H. Sawa, H. Sakaue, T. Takahagi 229

Convex-Surfaced, Cu-Damascene Interconnects Fabricated by Pad-Scanning, Local-CMP (PASCAL-CMP) / Yoshihiro Hayashi, Takahiro Onodera, Masayuki Tagami 235

Electrochemical Study of Reactivity for Cu Orientation in CMP Slurry / Y. Matsui, M. Kodera, N. Miyashita, Y. Yoda 241

Effects of Process Parameters on CMP Performance / Manabu Tsujimura, Norio Kimura, Hirokuni Hiyama, Masahiro Ota 247

Development of a Semiconductor Device-Cleaning Method Using a Cavitation Jet / Manabu Tsujimura, Hiroshi Tomita, Soichiro Nadahara, Masahiro Ota 253

Filling Profile Simulations of Electroplated Copper Films in Trenches / Shigeki Hirasawa, Tatsuyuki Saito, Hizuru Yamaguchi 259

Evolution of Grain and Micro-Void Structure in Electroplated Copper Interconnection Lines / A. Hobbs, S. Murakami, T. Hosoda, S. Ohtsuka, M. Miyajima, S. Sugatani, T. Nakamura 265

H Assisted Control of Quality and Conformality in Cu Film Deposition Using Plasma CVD Method / Masaharu Shiratani, Hong Jie Jin, Kosuke Takenaka, Kazunori Koga, Toshio Kinoshita, Yukio Watanabe 271

Diffusion Barriers

TEM/SEM Investigation and Electrical Evaluation of a Bottomless I-PVD Ta(N) Barrier in Dual Damascene / H. Yamagishi, Zs. Tokei, G.P. Beyer, R. Donaton, H. Bender, T. Nogami, K. Maex 279

Studies of XLK Film Characterization and Integration in Copper Damascene Processes / F. Iacopi, R.A. Donaton, B. Coenegrachts, T. Komiya, H. Struyf, M. Lepage, J. Van Aelst, W. Boullart, D. De Roest, I. Vos, M.R. Baklanov, G. Vereecke, M. Van Hove, M. Stucchi, Zs. Tokei, H. Meynen, J.N. Bremmer, S. Vanhaelemeersch, K. Maex 287

The Atomic Layer CVD Growth of Titanium Nitride From an In Situ-Reduced Titanium Chloride / Kai-Erik Elers, Ville Saanila, Pekka J. Soininen, Suvi Haukka 295

WN[subscript x] Film Deposition by PECVD Using WF[subscript 6]/N[subscript 2]/H[subscript 2] Gas Mixture / K. Richter, S. Riedel, S.E. Schulz, T. Gessner 301

Growth of Tungsten Carbide Thin Films as Diffusion Barriers for Cu Metallization / S. Veldman, A.M. Lemonds, K. Kershen, Y.-M. Sun, I. Emesh, K. Pfeifer, J.M. White, J.G. Ekerdt 307

Chemical Vapor Deposition of Tantalum and Tantalum Nitride / Joseph Hillman, John Hautala, Steven Caliendo 313

Properties of Ta and TaN Barriers and Sputtered Cu Seed Layers on Capped and Non-Capped Porous Silicon Oxide / S.E. Schulz, H. Koerner, H. Helneder, M. Schwerd, H. Wendt, C. Murray, I. Streiter, T. Gessner 321

The Novel Evaluation for Extremely Thin TaN[subscript x] Films as a Copper Barrier / Woo Sig Min, Sung Gyu Pyo, Heon Do Kim, Sibum Kim, Tae Kwon Lee, Heung Lak Park 329

Electroplating of Nickel-Tungsten Barrier Layers / O. Younes, Y. Diamand-Shacham, E. Gileadi 337

Fluorine Diffusion Through Si[subscript 3]N[subscript 4], Ta, and TaN Barrier Layers / J. Gambino, M. Lavoie, R. Wistrom, G. Bomberger, E. Cooney, R. Kontra, C. Johnson, O. Dokumaci, P. Dehaven 343

Via Yield Improvement Due to Optimization of PVD Seed/Barrier Deposition Process / H. Ashihara, T. Oshima, K. Fukuda, K. Kawakami, K. Ishikawa, A. Satoh, H. Miyazaki, H. Yamaguchi, T. Saito 349

Reactively Sputtered Ta[subscript 2]N and TaN Diffusion Barriers for Copper Metallization / Jyrki Molarius, Tomi Laurila, Tommi Riekkinen, Kejun Zeng, Antti Niskanen, Markku Leskela, Ilkka Suni, Jorma K. Kivilahti 355

Simulation of Barrier Layer Deposition for VLSI Applications Using 3D-Films / T. Smy, R.V. Joshi, S.K.

Dew 361

A Noble Metallization Process Using Preferential Metal Deposition (PMD)-Aluminum for Via / Byung Hee Kim, Jong Myeong Lee, Myoung Bum Lee, Gil Heyun Choi, Young Wook Park, Sang In Lee, Joo Tae Moon 367

Hillock Defects During Deposition of Thin PVD Titanium For Barrier Metal Deposition / Eric Paton, Bryan Tracy, Terri Kitson, Jeremias Romero, Alline Myers, Paul King, Janice Gray, Jeff Erhardt, Anthony Grabowski 373

Impact of Temperature During Interconnect Sputtering of Ti/TiN by Hollow Cathode Magnetron / A. Ruf, C. D'Couto, S. Schmidbauer, G. Tkach, N. Urbansky, M. Woitge 379

A Study of CVD Cu Adhesion on Various Barrier Metals by XPS / Young Suk Kim, Yukihiro Shimogaki 385

Barrier Properties of TiN Films Prepared by Flow Modulation Chemical Vapor Deposition (FMCVD) / Hirotaka Hamamura, Hiroshi Komiyama, Yukihiro Shimogaki 391

Characteristics of WN Barrier Films Grown Using Thermal CVD Process With NH3 and SiH4 Reduction / M. Harada, E. Mizuno, N. Gonohe 397

LPCVD of TaCN Thin Film for Barrier Layer in Cu Interconnection / A. Hoshino, T. Suzuki, S. Hiiro, H. Machida, A. Ogura, Y. Ohshita 403

The Structure Control of Sputtered TaN Films on SiO[subscript 2] Through the Study of Evolutionary Selection Growth / Kun Tepsanongsuk, Suguru Noda, Yoshiko Tsuji, Hiroshi Komiyama 409

Reliability

A Comparison of Reliability Aspects of a 0.35 [mu]m and 0.18 [mu]m Process Copper Metallization / A. von Glasow, A.H. Fischer 415

Direct Observation of a Critical Length Effect in Dual Damascene Cu Interconnects / E.T. Ogawa, A.J. Bierwag, K-D. Lee, H. Matsuhashi, P.R. Justison, A.N. Ramamurthi, P.S. Ho, V.A. Blaschke, D. Griffiths, A. Nelsen, M. Breen, R.H. Havemann 425

Non-Destructive High-Resolution In Situ Studies of the Electromigration in Passivated Cu Interconnects and Integrated Circuit Conductors by X-ray Microscopy / G. Schneider, D. Hambach, B. Kaulich, N. Hoffmann, W. Hasse, K. Hoffmann, S.E. Schulz, B. Niemann, J. Susini 431

Mechanical Properties of Damascene Cu Lines During Thermal Cycling / Mauro J. Kobrinsky, Mihal E. Gross, Carl V. Thompson 439

Reliability Qualification of Copper BEOL for Manufacturing / R.A. Wachnik, D. Edelstein, B. Agarwala, C. Bergeron, M. Bilak, R. Bolam, N. Greco, C-K. Hu, M. Johnson, T. Kane, A. Katsetos, W. Klaasen, E. Levine, H. Longworth, T. McDevitt, P. McLaughlin, E. Moszczynski, W. Motsiff, D. Nguyen, R. Purvee, H. Rathore, M. Ricker, A. Stamper, K. Stevens 447

Copper Reliability of Using PVD/CVD Composite Cu Layers as Seed for 0.10 [mu]m and Beyond Technology / C.S. Liu, J.C. Lin, S.L. Shue, C.H. Yu, M.S. Liang 457

Modeling Film and Via Electrical Resistance for 3D Structures Using 3D-Films / T. Smy, S. Crisan, R.V. Joshi, S.K. Dew 463

Mechanical Analysis of a SiLK/Cu Dual Damascene Interconnect System / J. Waeterloos, E. Shaffer II, T.M. Stokich, Jr., R.A. Donaton, K. Maex 469

3D Time-Depending Electro- and Thermomigration Simulation of Metallization Structures / D. Dalleau, K. Weide-Zaage 477

A Computer Simulation of Void Dynamics Under the Action of Electromigration and Capillary Forces in Narrow Thin Interconnects / T. Ogurtani, E.E. Oren 483

The Threshold Contact Area in Via Electromigration Lifetime / H. Park, B-Z. Lee, E.G. Seo, J.S. Kim, S.W. Woo, J.G. Lee 489

Stress Induced Void Formation in Co Silicide on Sub 100 nm Gate Poly / Ju-Hyuk Chung, Jang-Eun Lee, Ji-Soon Park, Ja-Hum Ku, Eung-Joon Lee, Sun-Hu Park, Sung-Tae Kim, Jeong-Lim Nam, Sang-In Lee 495

A New Evaluation Method of Contact Properties for the Establishment of Highly Reliable Copper Interconnects / N. Izumi, E. Kobori, M. Matsumoto, G. Nakatani, Y. Fuwa, J. Hikita 499

Alternative Systems and Processes

Large Area, Rubber Stamped Plastic Sheets of Active Matrix Backplane Circuitry for Electronic Paper / J.A. Rogers, K. Baldwin, Z. Bao, B. Crone, A. Dodabalapur, Y-Y. Lin, V.R. Raju 507

3D Integration Using Wafer Bonding / J-Q. Lu, A. Kumar, Y. Kwon, E.T. Eisenbraun, R.P. Kraft, J.F. McDonald, R.J. Gutmann, T.S. Cale, P. Belemjian, O. Erdogan, J. Castracane, A.E. Kaloyeros 515

Electroless Silver and Its Alloys for Interconnect Applications / I. Zhu, A. Inberg, N. Croitoru, Y. Shacham-Diamand 523

Damascene Metal Gate Technology / K. Nakajima, Y. Akasaka, T. Saito, K. Matsuo, A. Yagishita, K. Suguro 529

Advanced Film Transfer System for STP Method in Planarization Technology / Norio Sato, Katsuyuki Machida, Kazuhisa Kudo, Masaki Yano, Hakaru Kyuragi 535

Low-Temperature SiO[subscript 2] Formation by Ultrahigh-Vacuum Chemical Vapor Deposition Using Plasma-Activated Oxygen and Disilane / K. Kanamoto, T. Yoshida, T. Oizumi, A. Murai, T. Kurabayashi, J. Nishizawa 541

Low-k Dielectric Materials and Characterization

Study on CMP Pattern Erosion for the Integration of a PECVD Low-k Material into the W Dual Damascene Process / P. Wrschka, G. Lee, K-S. Low, K. Dev, D. Dobuzinsky, R. Conti, P. Shafer 549

The Impact of Mesoporous Silica Material Properties on Cu/Damascene Integration / E. Todd Ryan, Simon Lin, David Nelsen, Jeff Wetzel, David Gidley, Jim Drage 557

Dielectric Barrier Material Evaluations for Cu/Low-k Interconnects / Qing-Tang Jiang, Mike Daniels, Bob Havemann, Gennadi Bersuker, Kelly Taylor, Paul Besser, Jim Werking, Rod Augur 565

Porosity Characterization of Mesoporous Dielectric Thin Films Using Positron Annihilation Spectroscopy / Mihail P. Petkov, Marc H. Weber, Kelvin G. Lynn, Kenneth P. Rodbell, Willi Volksen, Robert D. Miller 571

Characterization of Plasma-Polymerized Divinylsiloxane Benzocyclobutene (DVS-BCB) Polymer Film / Munehiro Tada, Jun Kawahara, Yoshihiro Hayashi 579

Novel Nanoporous Ultra Low-Dielectric Constant Poly(methyl silsesquioxane) / Shu Yang, C-S. Pai, J.C-H. Pai, Om Nalamasu, Elsa Reichmanis, Joko Seputro, Yaw S. Obeng 587

Characterization and Integration of a New Si-O-C Film Deposited by CVD / R.A. Donaton, H. Struyf, M. Lepage, B. Coenegrachts, M. Stucchi, D. De Roest, M.R. Baklanov, S. Vanhaelemeersch, K. Maex, F. Gaillard, L-Q. Xia, T-H. Lim, M. Gotuaco, E. Yieh, L. Van Autryve 595

Comparative Study of Physical and Electrical Characteristics of F- and C-Doped Low-k CVD Oxides / Zhen-Cheng Wu, Zhi-Wen Shiung, Chiu-Chih Chiang, Wei-Hao Wu, Mao-Chieh Chen, Shwang-Ming Jeng, Weng Chang, Pei-Fen Chou, Syun-Ming Jang, Chen-Hua Yu, Mong-Song Liang 603

Polysiloxane-Based Low-k Porous Silica Films Deposited by Plasma Enhanced CVD / H. Ikakura, T. Ishimaru, Y. Yamamoto, Y. Kotake, S. Ohgawara, Y. Shioya, K. Ohira, K. Maeda 611

The Effect of Deposition Parameters on the Trimethylsilane Based PECVD a-SiOC:H Low-k Films for Cu Damascene Process / Soo Geun Lee, Kyoung-Woo Lee, Il Goo Kim, Seung Pae Lee, Min Kim, Jae Hak Kim, Hong-Jae Shin, Jin-Gi Hong, Hyeon-Deok Lee, Ho-Kyu Kang 619

A Comparison of TEOS and Silane Precursors for the Deposition of PE-CVD Fluorine Doped Glass (FSG) for Copper Damascene / Chris Bencher, Stanley Filipiak 625

Dependency of Basic Properties of Porous Silica ILD Thin Films in the k Range 1.6-2.7 on CMP Compatibility / H. Hanahata, S. Matsuno, M. Miyamoto, T. Ioka, T. Tanabe 629

Controllable Change of Porosity of SiOCH Low-k Dielectric Film / D.G. Shamiryan, M.R. Baklanov, S. Vanhaelemeersch, K. Maex 635

Novel Method of Estimating Dielectric Constant and Candidates for Ultralow-k (k<1.5) Materials / T. Fukuda, N. Aoi, A. Matsuura, H. Matsunaga 641

Low Dielectric Constant Porous Diamond Film Composed of Diamond Nano-particles / H. Sakaue, N. Yoshimura, S. Shingubara, T. Takahagi 647

Preparation of Low-k Porous SiO[subscript 2] Films by SiO[subscript 2]/Organic Hybrid Chemical Vapor Deposition / Akira Fujimoto 653

Damascene Process Compatibility of Organic Low-k Dielectrics / Yutaka Nomura, Fumihiko Ota, Ki-Tae Park, Hiroyuki Kurino, Mitsumasa Koyanagi 659

Aluminum/Tungsten Systems and Processes

Local Environments of Cu Atoms in AlCu Thin Films Studied Using Extended X-ray Absorption Fine Structures / Hirokazu Ezawa, Hideki Hashimoto, Hidehiko Yabuhara, Kaori Tsutsumi, Takashi Yoda 667

Electrochemical Study on Crystal Structure of Al-CMP / T. Yoda, K. Shiba, Y. Matsui 673

Chemical Passivation of TiN Underlayer as Anti-Oxidation Barrier for Enhancing the Nucleation of CVD-Al / T. Iino, M. Sugiyama, H. Itoh, J. Aoyama, H. Komiyama, Y. Shimogaki 679

A Theoretical Study on Al-CVD Using Dimethylethylamine Alane / Hideji Tsujii, Tohru Nakajima, Koichi Yamashita 685

The Orientation of Blanket W-CVD on the Underlayer Ti/TiN Studied by XRD / J. Fukuhara, Y. Watanabe, K. Otsuka, S. Satoh, S. Jimbo, K. Akiyama, M. Yamada, H. Ezawa, T. Yoda 691.

Notes:

"This Conference is sponsored by Continuing Education in Engineering, University Extension, University of California at Berkeley, California, U.S.A."

Includes bibliographical references and indexes.

ISBN:

1558995749

OCLC:

49782135