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Molecular nanoelectronics / edited by Mark A. Reed and Takhee Lee.
LIBRA TK7874.8 .M655 2003
Available from offsite location
- Format:
- Book
- Language:
- English
- Subjects (All):
- Molecular electronics.
- Nanotechnology.
- Physical Description:
- xviii, 394 pages : illustrations ; 29 cm
- Place of Publication:
- Stevenson Ranch, CA : American Scientific Publishers, 2003.
- Contents:
- Chapter 1. Molecular Wire Conductance: Some Theoretical and Computational Aspects / Alessandro Troisi, Mark A. Ratner
- 2. Theories of Coherent Electron Transfer in Molecular Junctions 2
- 2.1. Landauer Approach 3
- 2.2. Conductance Using Molecular and Electrode States 4
- 2.3. Partitioning and Self-Energies 5
- 2.4. Other Approaches 7
- 3. Evaluation of the Conductance for Coherent Transport 7
- 3.2. Some Computational Examples 9
- 3.3. Potential Profile Treatments 11
- 3.4. Fermi Energy 12
- 3.5. Coulomb Repulsion 13
- 4. Incoherent Transport and Vibronic Coupling 14
- 5. Remarks, Observations, and Suggestions 15
- Chapter 2. Unimolecular Electrical Rectifiers / Robert M. Metzger
- 2. How to Measure Monolayers? 21
- 2.1. Metal Contacts 21
- 2.2. Assembly: Physisorption versus Chemisorption 24
- 3. Marcus Electron Transfer Theory 24
- 4. Initial Work on Monolayer Rectifiers 25
- 4.1. The Organic Rectifier Project 25
- 4.2. Electrical Properties of Monolayers and Multilayers 26
- 5. Rectification by Monolayers and Molecules of C[subscript 16]H[subscript 33]Q-3CNQ (25) 27
- 5.1. Confirmation of Electrical Rectification by a Single Molecule 27
- 5.2. Molecular Properties of C[subscript 16]H[subscript 33]Q-3CNQ (25) 27
- 5.3. Film Properties of C[subscript 16]H[subscript 33]Q-3CNQ (25) 28
- 5.4. Metal-LB Film-Metal Sandwiches of C[subscript 16]H[subscript 33]Q-3CNQ (25) 29
- 5.5. Unimolecular Rectification by C[subscript 16]H[subscript 33]Q-3CNQ (25) 30
- 6. Search for New Rectifiers 32
- 6.1. Failed Rectification Efforts 32
- 6.2. Two New Rectifiers 33
- 6.3. Other Rectifier Results 34
- 7. Prospects for the Future 35
- 7.1. Challenges for the Near Future 35
- 7.2. Opinions 35
- Chapter 3. Molecular Electronic Devices / J. Chen, T. Lee, J. Su, W. Wang, M. A. Reed, A. M. Rawlett, M. Kozaki, Y. Yao, R. C. Jagessar, S. M. Dirk, D. W. Price, J. M. Tour, D. S. Grubisha, D. W. Bennett
- 2.1. Self-Assembled Monolayers 40
- 2.2. Conjugated Oligomeric Systems 41
- 2.3. Basic Charge Transport Mechanisms 42
- 2.4. Initial Studies in Molecular Electronics 45
- 3. Synthesis of Molecular Wires and Devices 45
- 3.1. Synthesis of One-Terminal Oligo(phenylene ethynylene) Molecular Wires 46
- 3.2. Synthesis of Two-Terminal Oligo(phenylene ethynylene) Molecular Wires 46
- 3.3. Synthesis of Three-Terminal Molecular Scale Wires 47
- 3.4. Molecular Wires with Internal Methylene and Ethylene Transport Barriers 47
- 3.5. Synthesis of Molecular Scale Devices with Heteroatomic Functionalities 49
- 3.6. Porphyrin Containing Molecular Scale Wires 52
- 3.7. Synthesis of Dipole-Possessing Molecular Wire SAMs to Control Schottky Barriers in Organic Electronic Devices 53
- 3.8. Experimental 54
- 4. Fabrication of Molecular Transport Devices 81
- 5. Simple SAM Metal-Insulator-Metal Tunneling 83
- 6. Basic Transport Measurement in Molecular Layers 88
- 6.1. Conduction Mechanisms 89
- 6.2. Isocyanide SAM 90
- 6.3. Localized States in Metal-SAM-Metal Junctions 94
- 7. Device Applications of Molecular Layers 98
- 7.1. Conductor-Insulator Transition Caused by Molecular Conformation 98
- 7.2. Negative Differential Resistance in Molecular Junctions 98
- 7.3. Temperature Dependence 101
- 7.4. Molecular Memory Effects 104
- 7.5. Demonstration of a Molecular Memory Storage Cell 109
- Chapter 4. Nanoscale Device Modeling / P. S. Damle, A. W. Ghosh, S. Datta
- 1.1. Inadequacy of Macroscopic Models 116
- 1.2. Equilibrium 116
- 1.3. Nonequilibrium 118
- 1.4. Density Matrix and the Current Operator 118
- 2. NEGF Formalism 120
- 2.1. Discrete One-Level Model 121
- 2.2. Broadening 122
- 2.3. Multilevel Generalization 123
- 2.4. Nonorthogonal Basis 124
- 3. Quantum Point Contact: Ab Initio Model 125
- 3.1. Hamiltonian 125
- 3.2. Self-Energy 125
- 3.3. Self-Consistent Potential 127
- 3.4. Results 128
- 4. Dual-Gate Nanotransistor: Effective Mass Model 129
- 4.1. Hamiltonian 129
- 4.2. Self-Energy 132
- 4.3. Self-Consistent Potential 133
- 4.4. Results 133
- Chapter 5. Gated Molecular Devices Using Self-Assembled Monolayers / D. Abusch-Magder, Z. Bao, A. Erbe, H. Meng, N. Zhitenev
- 2.1. Signals Used to Control and Probe Molecules 137
- 2.2. Molecular Nanoelectronics: Schemes for Limiting Device Size 140
- 2.3. Studies of Self-Assembled Monolayers 141
- 3. Materials 142
- 3.1. Synthesis 143
- 3.2. Self-Assembly Conditions 145
- 4. Small Gated Metal-Molecule-Metal Junctions on a Tip 145
- 5. Gated Metal-Molecule-Metal Junctions in Planar Geometry 149
- Chapter 6. Controlling and Measuring Molecular-Scale Properties for Molecular Nanoelectronics / Rachel K. Smith, Paul S. Weiss
- 1. Molecular Nanoelectronics: Design and Measurement 153
- 1.1. Introduction to Scanning Probe Microscopies 154
- 1.2. Positioning Molecules onto Surfaces through Self- and Direct-Assembly 157
- 2. Integrating Organic Molecules into Nanoelectronic Devices 160
- 2.1. Molecular Wires 164
- 2.2. Molecular Switches 166
- 3. Nanoparticles as Optoelectronic Architecture 168
- Chapter 7. Carbon Nanotubes: Synthesis, Devices, and Integrated Systems / Xiaolei Liu, Chenglung Lee, Song Han, Chao Li, Chongwu Zhou
- 2. Synthesis of Carbon Nanotubes 180
- 3. Electronic Properties of Carbon Nanotubes 182
- 3.1. Fabrication and Overview of Nanotube Devices 183
- 3.2. Electronic Properties of Metallic Carbon Nanotubes 183
- 3.3. Electronic Properties of Small-Gap Semiconducting Carbon Nanotubes 185
- 3.4. Electronic Properties of Semiconducting Carbon Nanotubes 188
- 3.5. Nanotube p-n Junctions 190
- 3.6. Carbon Nanotube Complementary Field-Effect Inverters 194
- 3.7. Logic Gates Using Carbon Nanotubes 196
- Chapter 8. Nanowire Nanoelectronics Assembled from the Bottom-Up / Xiangfeng Duan, Yu Huang, Yi Cui, Charles M. Lieber
- 1.1. Top-Down Technology: The Limitations 200
- 1.2. Bottom-Up Technology: Requirements and Promise 200
- 1.3. Nanoscale Building Blocks 201
- 2. Rational Synthesis of Nanowires 202
- 2.1. Symmetry Breaking: A Key Concept for 1D Growth 202
- 2.2. Catalytic Growth: Concepts and Synthetic Design 202
- 2.3. Laser-Assisted Catalytic Growth 203
- 2.4. Catalytic Chemical Vapor Deposition Growth of Nanowires 205
- 2.5. Summary: Nanocluster Catalyzed NW Growth 206
- 2.6. Current and Future Directions 206
- 3. Nanowire Electronic and Optoelectronic Devices 207
- 3.1. Nanowire Field Effect Transistors 207
- 3.2. Crossed NW p-n Junctions 208
- 3.3. Bipolar Junction Transistors 209
- 3.4. Crossed Nanowire FETs 210
- 3.5. Light Emitting Diodes 211
- 3.6. Photodetectors 212
- 4. Hierarchical Assembly Nanowires 214
- 4.1. Electrical Field Directed Assembly 215
- 4.2. Fluid Flow Directed Assembly 215
- 4.3. Future Directions 217
- 5. Integrated Nanowire Devices 217
- 5.1. Integrated Cross Nanowire p-n Junctions and cNW-FETs 218
- 5.2. Nanowire Logic Circuits 218
- 6. Application of Nanoscale Devices in Chemical and Biological Sensing 222
- 6.1. Underlying Principle 222
- 6.2. Chemical Sensors: The Case of pH Sensors 222
- 6.3. Biological Sensors 223
- 6.4. Future Directions 225
- Chapter 9. Nanoparticles: Building Blocks for Functional Nanostructures / Corey Radloff, Cristin E. Moran, Joseph B. Jackson, Naomi J. Halas
- 2. Building Blocks 230
- 2.1. Nonmetallic Nanoparticles 230
- 2.2. Semiconductor Nanocrystals 235
- 2.3. Metal Nanoparticles 241
- 3. Assembly and Deposition Methods 244
- 3.1. Nanoshells 244
- 3.2. Two- and Three-Dimensional Nanoparticle Assemblies 247
- 3.3. Single-Particle Trapping and Manipulation 256
- 4. Applications 258
- 4.1. Quantum Dot Corporation 258
- 4.2. Nanospectra L.L.P. 258
- 4.3. SurroMed Incorporated 259
- Chapter 10. Molecular- and Nanocrystal-Based Photovoltaics / Laura A. Swafford, Sandra J.
- Rosenthal
- 2. p-n Junction Silicon Solar Cells 264
- 3. Photosynthesis: Nature's Solar Cell 266
- 4. Molecular- and Nanomaterial-Based Photovoltaics 267
- 4.1. Schottky Photodiodes 267
- 4.2. Sandwich Heterojunction Photovoltaics 277
- 4.3. Bulk Heterojunction Photovoltaics 279
- 5. Future Photovoltaics 284
- Appendix Photovoltaic Efficiencies 286
- A.1. Lighting Conditions 286
- A.2. Calculating Photovoltaic Efficiencies 287
- Chapter 11. Organic Thin Film Transistors / Hagen Klauk, Thomas N. Jackson
- 2. Pushing the Limits 296
- 3. Device Architectures 297
- 4. Flexible Substrate Technology 297
- 5. Gate Dielectrics 299
- 6. Low-Cost Processes 300
- 6.1. Microcontact Printing 300
- 6.2. Photochemically Patterned Films 301
- 6.3. Inkjet Printing 301
- 7. Performance Enhancement Techniques 302
- 7.1. Regioregularity in Polymers 302
- 7.2. Silane Coupling Agent Treatment 302
- 7.3. Contact Treatment 303
- 7.4. Mixed Organic-Inorganic Active Layers 304
- 8. Organic TFT Integration 304
- 8.1. Integrated Organic TFT Circuits 304
- 8.2. Flat Panel Displays with Organic TFTs 305
- 9. Future Directions 307
- Chapter 12. Organic and Polymeric Light Emitting Devices / Marie D'Iorio, Ye Tao
- 2. Small Molecule Light Emitting Devices 313
- 2.1. Materials 313
- 2.2. Heterostructure Design 314
- 2.3. Degradation Processes 315
- 3. Polymeric Light Emitting Devices 315
- 3.1. Device Structures and Fabrication 316
- 3.2. Electroluminescent Polymers 318
- 4. Phosphorescent Materials and Devices 319
- 5. Lasing in Organic and Polymeric Materials 320
- 6. Patterning Techniques 322
- Chapter 13. Molecules, Gates, Circuits, and Computers / Seth Copen Goldstein, Mihai Budiu
- 2. The Switch 329
- 2.2. Boolean Logic Gates 331
- 2.3. Transistors 333
- 2.4. Manufacturing and Fabrication 334
- 2.5. Moore's Law 335
- 2.6. The Future 336
- 2.7. A New Regime 336
- 3. Processor Architecture 337
- 3.1. Computer Architecture 337
- 3.2. Instruction Set Architectures 338
- 3.3. Processor Evolution 339
- 3.4. Problems Faced by Computer Architecture 344
- 4. Reliability in Computer System Architecture 345
- 4.2. Reliability 346
- 4.3. Increasing Reliability 347
- 4.4. Formal Verification 349
- 4.5. Exposing Unreliability to Higher Layers 349
- 4.6. Reliability and Electronic-Nanotechnology Computer Systems 352
- 5. Reconfigurable Hardware 352
- 5.1. RH Circuits 353
- 5.2. Circuit Structures 354
- 5.3. Using RH 354
- 5.4. Designing RH Circuits 355
- 5.5. RH Advantages 356
- 5.6. RH Disadvantages 357
- 5.7. RH and Fault Tolerance 359
- 6. Molecular Circuit Elements 360
- 6.1. Devices 361
- 6.2. Wires 363
- 7. Fabrication 363
- 7.1. Techniques 364
- 7.2. Implications 364
- 7.3. Scale Matching 365
- 7.4. Hierarchical Assembly of a Nanocomputer 367
- 8. Circuits 368
- 8.1. Diode-Resistor Logic 368
- 8.2. RTD-Based Logic 369
- 8.3. Molecular Latches 369
- 8.4. Molecular Circuits 373
- 8.5. Molecular Transistor Circuits 373
- 9. Molecular Architectures 374
- 9.1. Nanofabrics 374
- 9.2. Random Approach 378
- 9.3. Quasi-Regular Approaches 379
- 9.4. Deterministic Approach 380
- 9.5. Architectural Constraints 380
- 10. Defect Tolerance 381
- 10.1. Methodology 382
- 10.2. Scaling with Fabric Size 383
- 11. Using Molecular Architectures 384
- 11.1. Split-Phase Abstract Machine 384.
- Notes:
- Includes bibliographical references and index.
- Local Notes:
- Acquired for the Penn Libraries with assistance from the Rosengarten Family Fund.
- ISBN:
- 1588830063
- OCLC:
- 52299733
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