Progress in semiconductors II--electronic and optoelectronic applications : symposium held December 2-5, 2002, Boston, Massachusetts, U.S.A. / editors, B.D. Weaver ... [and others].

Format:

Book

Conference/Event

Contributor:

Weaver, B. D.

Materials Research Society. Fall Meeting (2002 : Boston, Mass.)

Conference Name:

Symposium M, "Progress in Semiconductor Materials II: Electronic and Optoelectronic Applications" (2002 : Boston, Mass.)

Series:

Materials Research Society symposia proceedings ; v. 744.

Materials Research Society symposia proceedings

Language:

English

Subjects (All):

Semiconductors--Congresses.

Semiconductors.

Electronic apparatus and appliances--Congresses.

Electronic apparatus and appliances.

Optoelectronic devices--Congresses.

Optoelectronic devices.

Genre:

Conference papers and proceedings.

Physical Description:

xvii, 680 pages : illustrations ; 24 cm.

Other Title:

Progress in semiconductors two

Progress in semiconductors 2

Place of Publication:

Warrendale, Pa. : Materials Research Society, [2003]

Contents:

Electronic Devices

Control of Indium Surface Segregation in GaAs Layer on InGaP Grown by MOVPE / Y. Fukushima, Y. Nakano, Y. Shimogaki 3

Lateral Epitaxial Overgrowth of InAs on (100) GaAs Substrates / Ganesan Suryanarayanan, Anish A. Khandekar, Brian E. Hawkins, Thomas F. Kuech, Susan E. Babcock 9

Epitaxial Praseodymium Oxide: A New High-K Dielectric / H.J. Osten, E. Bugiel, A. Fissel 15

Z-Contrast Imaging and EELS of Dislocation Cores at the Si/GaAs Interface / S. Lopatin, G. Duscher, S.J. Pennycook, M.F. Chisholm 25

Fracture Mechanical Evaluation of GaAs Wafers / M. Schaper, M. Jurisch, F. Bergner, R. Hammer 29

Phonon Frequencies and Thermal Expansion of III-V Compounds / Robert R. Reeber 35

Si/Ge Devices and Technology

Terahertz-Emitting Silicon-Germanium Devices / Ralph T. Troeger, Thomas N. Adam, Samit K. Ray, Pengcheng Lv, Ulrike Lehmann, James Kolodzey 43

New Ge-Sn Materials With Adjustable Bandgaps and Lattice Constants / Matthew R. Bauer, John Tolle, A. V. G. Chizmeshya, S. Zollner, J. Menendez, J. Kouvetakis 49

Metal-Induced Low-Temperature Crystallization of Amorphous SiGe on Insulating Films / M. Miyao, H. Kanno, I. Tsunoda, T. Sadoh, A. Kenjo 55

Process Control of Epi-Layers for SiGe:C Hetero-Structure Bipolar Transistors / Qianghua Xie, Erika Duda, Mike Kottke, Wentao Qin, Xiang-Dong Wang, Shifeng Lu, Martha Erickson, Heather B. Kretzschmar 61

Raman Scattering Study for Self-Organized Ge Quantum Dots Formed on Si Substrate / T.R. Yang, M.M. Dvoynenko, Z.C. Feng, I. Ferguson, H.H. Cheng 67

Zinc Oxide and Related Compounds

ZnO and ZnMgOGrowth by Molecular Beam Epitaxy / Mitsuaki Yano, Ken-ichi Ogata, FengPing Ya, Kazuto Koike, Shigehiko Sasa, Masataka Inoue 75

Luminescence and EPR Study of Lithium-Diffused ZnO Crystals / N.Y. Garces, Lijun Wang, M.M. Chirila, L.E. Halliburton, N.C. Giles 87

MBE Growth and Optical Properties of ZnSeO / Y. Nabetani, T. Mukawa, Y. Ito, T. Kato, T. Matsumoto 93

Implant Isolation of ZnO Epitaxial Layers / S.O. Kucheyev, C. Jagadish, J.S. Williams, P.N.K. Deenapanray, Mitsuaki Yano, Kazuto Koike, Shigehiko Sasa, Masataka Inoue, Ken-ichi Ogata 99

Lattice Site Location Studies of Rare-Earths Implanted in ZnO Single-Crystals / Elisabete M.C. Rita, Ulrich Wahl, Armandina L. Lopes, Joao P. Araujo, Joao G. Correia, Edward Alves, Jose C. Soares, the ISOLDE Collaboration 105

Effect of Remote Hydrogen Plasma Treatment on ZnO Single Crystal Surfaces / Yuri M. Strzhemechny, John Nemergut, Junjik Bae, David C. Look, Leonard J. Brillson 111

Emitters, Lasers and Photovoltaics

Ultraviolet Emitting SrS: Te Thin Films / J.M. Fitz-Gerald, J. Hoekstra, J.D. Fowlkes, P.D. Rack 119

Thermally Evaporated AgGaTe[subscript 2] Thin Films For Low-Cost p-AgGaTe[subscript 2]/n-Si Heterojunction Solar Cells / Krishna C. Mandal, Anton Smirnov, Utpal N. Roy, Arnold Burger 131

Properties of GaAsSb QW Heterostructures Having Various Barrier Materials Grown by Metalorganic Chemical Vapor Deposition / Min Soo Noh, Jae Hyun Ryou, Ying-Lan Chang, Robert Weissman, Russell D. Dupuis 137

High Efficiency Bulk Crystalline Silicon Light Emitting Diodes / Jianhua Zhao, Aihua Wang, Thorsten Trupke, Martin A. Green 143

Extremely Large Er Excitation Cross Section in Er,O-Codoped GaAs Light Emitting Diodes Grown by Organometallic Vapor Phase Epitaxy / Yasufumi Fujiwara, Atsushi Koizumi, Kentaro Inoue, Akira Urakami, Taketoshi Yoshikane, Yoshikazu Takeda 149

High-Resolution Study of Light and Heat Patterns in Infrared Emitting Devices / V.K. Malyutenko 155

Electrical and Optical Properties of Zinc Oxide Thin Films and Heavily Aluminum-Doped Zinc Oxide Thin Films Prepared by Molecular Beam Epitaxy / Takeshi Ohgaki, Yuji Kawamura, Naoki Ohashi, Hirofumi Kakemoto, Satoshi Wada, Yutaka Adachi, Hajime Haneda, Takaaki Tsurumi 163

Passivation of Defects in ZnO by Hydrogen Plasma Irradiation / Naoki Ohashi, Takamasa Ishigaki, Takashi Sekiguchi, Isao Sakaguchi, Hajime Haneda 169

Structural, Optical and Electrical Properties of the Novel Semiconductor Alloy ZnO[subscript x]Te[subscript (1-x)] / H.L. Porter, C. Jin, J. Narayan, A.L. Cai, J.F. Muth, O.W. Holland 175

The Growth and Characterization of Zinc Oxide Thin Film on Fused Silica and SiO[subscript 2]/Si(100) Substrates / C. Jin, A. Tiwari, H. Porter, M. Park, J. Narayan 181

A Differential Scanning Calorimetry (DSC) Study on the Pyrolysis Mechanism of Zinc Oxide CVD Precursor, Zinc Acetylacetonate / Yuneng Chang, Junhsuan Hsieh, Chonan Wang, Liting Hong 187

Pulsed Laser Deposition of Stable Cubic ZnO/MgO Multilayers / P. Bhattacharya, Rasmi R. Das, Ram S. Katiyar 193

A Study on Impact of Process Parameters to Metal Organic Chemical Vapor Deposition Grown (002) Zinc Oxide Thin Films, at 320[degree]C / Yuneng Chang, Hengchuan Lu, Yumeng Hung, Chunsung Lee, Jianming Chen, Yichang Jian 199

Effect of Growth Temperature and Annealing on ZnO / A.L. Cai, J.F. Muth, M.J. Reed, H.L. Porter, C. Jin, J. Narayan 207

Quantum Efficiency Modeling of Amorphous/Crystalline Silicon Heterojunction Photovoltaic Devices / F. Khalvati, S. Sivoththaman 213

A Single Source Approach to Deposition of Nickel and Palladium Sulfide Thin Films by LP-MOCVD / J. Waters, P. O'Brien, J.H. Park 219

Screen Printable Doped Self-Aligned Metallization for Solar Cells / Ernest A. Addo, Ismat Shah, Robert Opila, Allen. M. Barnett, Kevin Allison, Oleg Sulima 225

Photosensitive Amorphous Si Thin Films Prepared by Magnetron Technology / Galina Khlyap, Victor Brytan, Larisa Bochkariova 231

Deposition of II/VI Thin Films from Novel Single-Source Precursors / Mohammad Afzaal, Mohammad Azad Malik, Paul O'Brien, Jin-Ho Park 237

Amorphous-Microcrystalline Silicon Films Obtained Using Hydrogen Dilution in a DC Saddle-Field Glow-Discharge / T. Allen, I. Milostnaya, D. Yeghikyan, F. Gaspari, N.P. Kherani, T. Kosteski, S. Zukotynski 243

The Role of Hydrogen in Laser Crystallized Polycrystalline Silicon / N.H. Nickel, K. Brendel 249

The Energy Band Structures of Cd[subscript 1-x]Zn[subscript x] Te Polycrystalline Thin Films and Their Applications for Photovoltaic Devices / Jiagui Zheng, Lianghuan Feng, Ye Shao, Yaping Cai, Jingquan Zhang, Wei Cai, Lili Wu, Daolin Cai, Wenjian Len, Jumu Zhu 255

Tunnel Currents in the Photo-Field Detectors and the Auger Transistor under Strong Electric Field / Vladimir D. Kalganov, Nina V. Mileshkina, Elena V. Ostroumova, Ekaterina A. Rogacheva 259

A Boron Doped Amorphous Silicon Thin-Film Bolometer for Long Wavelength Detection / A. Heredia-J, A. Torres-J, A. Jaramillo-N, F.J. De la Hidalga-W, M. Landa-V 265

Characterization of Sputter Deposited PbTe on Si (111) for Optoelectronic Applications / Alexey Jdanov, Zinovi Dashevsky, Joshua Pelleg, Roni Shneck 271

Far-Infrared Magnetooptical Generalized Ellipsometry Determination of Free-Carrier Parameters in Semiconductor Thin Film Structures / Tino Hofmann, Marius Grundmann, Craig M. Herzinger, Mathias Schubert, Wolfgang Grill 277

Far-Infrared Dielectric Function and Phonon Modes of Spontaneously Ordered (Al[subscript x]Ga[subscript 1-x])[subscript 0.52]In[subscript 0.48]P / Tino Hofmann, Volker Gottschalch, Mathias Schubert 283

Electrodeposition of Cu[subscript 2]Se Thin Films by Electrochemical Atomic Layer Epitaxy (EC-ALE) / Raman Vaidyanathan, Mkhulu K. Mathe, Patrick Sprinkle, Steve M. Cox, Uwe Happek, John L. Stickney 289

Optical Absorption of Large Band-Gap Sb[subscript x]Bi[subscript 1-x]I[subscript 3] Alloys / C. Persson, R. Ahuja, J. Souza de Almeida, B. Johansson, C.Y. An, F.A. Ferreira, N. Souza Dantas, I. Pepe, A. Ferreira da Silva 295

Intersubband Transitions in Proton Irradiated InGaAs/InAlAs Multiple Quantum Wells Grown on Lattice Matched InP Substrate / Qiaoying Zhou, M.O. Manasreh, B.D. Weaver, M. Missous 301

Composition of [beta]FeSi[subscript 2] Thin-Films Grown by a Pulsed Laser Deposition Method / Shin-ichiro Uekusa, Masahiro Yamamoto, Keiichi Tsuchiya, Noboru Miura 309

Native Point Defect Interactions in ZGP Crystals under Influence of e-Beam Irradiation / A.I. Gribenyukov, G.A. Verozubova, A.Yu. Trofimov, A.W. Vere, C.J.

Flynn 315

Raman and Magneto Transport Studies of MBE Grown [beta]FeSi[subscript 2], [beta](Fe[subscript 1-x]Cr[subscript x])Si[subscript 2], and [beta](Fe[subscript 1-x]Co[subscript x])Si[subscript 2] / A. Srujana, A. Wadhawan, K. Srikala, B.P. Gorman, R.J. Cottier, Wei Zhao, C.L. Littler, J.M. Perez, T.D. Golding, A.G. Birdwell, W. Henrion, M. Rebien, P. Stauss, R. Glosser 321

Design and Fabrication of a VCSEL With Graded Bragg Mirror Interfaces for Operation at 850 nm / Chichang Zhang, Aris Christou 327

High Gain, Low Threshold Current GaInAsP Based VCSELS for Operation at 1.24 um / Zhuopeng Tan, Yixin Li, Aris Christou 331

Novel Resistance Reduction and Phase Changes of Contacts to n-Type InP by Rapid Thermal Annealing / J.S. Huang, T. Nguyen, N. Bar-Chaim, C.B. Vartuli, S. Anderson, J. Shearer, C. Fisher 337

Design of a 364 nm Electrically Pumped Multi-Quantum Well Continuous Wave Nitride Vertical Cavity Surface Emitting Laser / Shelia C. Luke, Abhishek Motayed, Aris Christou 343

DLTS Studies of Defects Produced in n-Type Silicon by Hydrogen Implantation at Low Temperature / Takahide Sugiyama, Masayasu Ishiko, Shigeki Kanazawa, Yutaka Tokuda 349

Nanostructures

Carrier Recombination in InAs/GaAs Quantum Dot and GaInNAs/GaAs Quantum Well LEDs Emitting Near 1300 nm / A.J. Bennett, L. Lofgren, P.N. Stavrinou, C. Roberts, R. Murray, G. Parry, J.S. Roberts 357

Formation of Defects in MBE Re-Grown GaAs Films on GaAs/AlGaAs Heterostructures / M. Lamberti, V. Tokranov, R. Moore, M. Yakimov, A. Katsnelson, S. Oktyabrsky 369

Interdiffusion in Semiconductor Quantum Dot Structures / P. Lever, L. Fu, C. Jagadish, M. Gal, H.H. Tan 375

1.5 [mu]m Range Self-Organized In[subscript 0.65]Ga[subscript 0.3]5As/In[subscript 0.52]Al[subscript 0.48]As Quantum Wire Structures Grown on (775)B-Oriented InP Substrates by Molecular Beam Epitaxy / K. Hyodo, Y. Ohno, H. Kanamori, T. Kitada, S. Shimomura, S. Hiyamizu 383

Characterization of Metallic and Metal Oxide Nanoparticles Produced by Electrothermal-Chemical Synthesis / Kurt A. Schroder, Dennis E. Wilson, Kyoungjin Kim, Henry E. Elliott Jr. 389

Innovative Materials and Devices

Characterization of AlInAsSb and AlGaInAsSb MEB-Grown Digital Alloys / Leslie G. Vaughn, L. Ralph Dawson, Huifang Xu, Yingbing Jiang, Luke F. Lester 397

Yellow-Green Emission for ETS-LEDs and Lasers Based on a Strained-InGaP Quantum Well Heterostructure Grown on a Transparent, Compositionally Graded AlInGaP Buffer / Lisa McGill, Juwell Wu, Eugene Fitzgerald 409

Trace Water Detection in Phosphine by Cavity Ring-Down Spectroscopy / Susan Y. Lehman, Kris A. Bertness, Joseph T. Hodges 419

Improved Device Performance of In[subscript 0.5]Ga[subscript 0.5]P/In[subscript 0.22]Ga[subscript 0.78]As/GaAs MOS p-HEMT Using a Selective Liquid Phase Oxidation / I-H. Kang, J-W. Lee, S-J. Kang, S-J. Jo, S-K. In, H-J. Song, J-H. Kim, J-I. Song 427

Comparison of the Strain and Stress in Bonded and Epitaxial Gallium Arsenide on Silicon by Photoreflectance Spectroscopy Measurements / Spyros Gallis, George Deligeorgis, Alexandros Georgakilas, Marin Alexe 433

Ti/Ni/Au/Diamond MIS Field Effect Transistors With TiO[subscript 2] Gate Dielectric / Yuhong Cai, Aris Christou 439

Oxygen Incorporation into MBE Grown AlGaAs Layers / S. Naritsuka, O. Kobayashi, K. Mitsuda, T. Maruyama, T. Nishinaga 445

Electronic Properties of n-type Al[subscript x]Ga[subscript 1-x]As Alloys / A. Ferreira da Silva, I. Pepe, H. Haratizadeh, P.O. Holtz, C. Persson, R. Ahuja, J. Souza de Almeida, A.G. de Oliveria 451

Stability of Non-Hydrogenated and Hydrogenated P-Channel Polycrystalline Silicon Thin-Film Transistors / N.A. Hastas, C.A. Dimitriadis, G. Kamarinos 457

Graded-Band-Gap Semiconductors: The Possibilities for Improvement of p-n Junction Performance / Bogdan Sokolovskii, Roman Yasnytskyi 463

MOCVD Growth and Characterization of GaInNAs/GaAs/InGaAs/GaAs Quantum Well Structures / Abdel-Rahman A. El-Emawy, Hongjun Cao, Noppadon Nuntawong, Chiyu Liu, Marek Osinski 469

Silicon CMOS BEOL Compatible Optical Waveguide Micro-Mirrors / Shom Ponoth, Navnit Agarwal, Peter Persans, Joel Plawsky 475

Noise Sources in Polycrystalline Silicon Thin-Film Transistors / Il Ki Han, Young Ju Park, Woon Jo Cho, Won Jun Choi, Jungil Lee, Alain Chovet, Jean Brini 481

Changes in Structural and Optical Properties of CdS Thin Films During the Process of Chemical Bath Deposition / Wei Li, Liang-huan Feng, Ya-ping Cai, Jing-quan Zhang, Jia-gui Zheng, Wei Cai, Li-li Wu, Bing Li, Ye Shao, Dao-lin Cai, Wen-jian Len 487

Development of an On-Chip Semiconducting Readout For Subsurface Optical Data / William K. Loghry, N.J. Ianno, R.O. Dillon 495

500[degree]C Formation of Poly-Si[subscript 1-x]Ge[subscript x] (x [greater than or equal] 0.5) on SiO[subscript 2] by Ion-Beam Stimulated Solid Phase Crystallization / Isao Tsunoda, Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao 501

MOCVD Growth and Characterization of InNAs/GaAs Quantum Wells / Abdel-Rahman A. El-Emawy, Noppadon Nuntawong, Hongjun Cao, Chiyu Liu, Huifang Xu, Marek Osinski 507

Photoluminescence in UHV/CVD Tensile-Strained Si Type-II Quantum Wells on Bulk Crystal SiGe Substrates / S.R. Sheng, N.L. Rowell, S.P. McAlister 513

Photoluminescence of Ge Nanoclusters in Ion Implanted SiO[subscript 2] / J.M.J. Lopes, F.C. Zawislak, M. Behar, P.F.P. Fichtner, L. Rebohle, W. Skorupa 519

Optical Properties of Al[subscript 0.70]Ga[subscript 0.30]As:Er,Yb / Shin-ichiro Uekusa, Isao Tanaka, Tomoyuki Arai 525

Photoreflectance Study of Hydrogenated (InGa)(AsN)/GaAs Heterostructures / M. Geddo, G. Guizzetti, R. Pezzuto, A. Polimeni, M. Capizzi, M. Bissiri, G. Baldassarri, Hoger von Hogersthal, D. Gollub, A. Forchel 531

Optical and EPR Study of Defects in Cadmium Germanium Arsenide / Lihua Bai, N.Y. Garces, Nanying Yang, P.G. Schunemann, S.D. Setzler, T.M. Pollak, L.E. Halliburton, N.C. Giles 537

Effect of Pressure-Enhanced Single Step Annealing on the Silicon Photoluminescence / S. Binetti, A. Le Donne, V.V. Emtsev Jr., V.V. Emtsev, S. Pizzini 543

Mesoscopic Study of the Electronic Properties of Thin Polymer Films / Ricardo M. Ribeiro, Marta M.D. Ramos, A.M. Almeida, Helena M.G. Correia, Jaime Silva, A.M. Stoneham 549

Lanthanide Doped Cubic Boron Nitride / U. Vetter, T. Taniguchi, U. Wahl, J. Correia, A. Muller, C. Ronning, H. Hofsass, M. Dietrich, ISOLED Collaboration 555

Growth and Characterization of Epitaxial Films of ZnGeP[subscript 2] / G.A. Verozubova, A.I. Gribenyukov, M.C. Ohmer, N.C. Fernelius, J.T. Goldstein 561

Detectors

Intersubband Transitions in InAs/AlSb Quantum Wells / J. Li, K. Kolokolov, C.Z. Ning, D.C. Larraber, G.A. Khodaparast, J. Kono, K. Ueda, Y. Nakajima, S. Sasa, M. Inoue 571

Far Infrared Spectroscopy of In[subscript 0.53]Ga[subscript 0.47]As Quantum Wells on InP(100) / N.L. Rowell, D.J. Lockwood, P.J. Poole, G. Yu 583

GaSb-Based Materials for Mid-Infrared Photodiodes Operating in the 0.9-2.55 [mu]m Spectral Range / I.A. Andreev, E.V. Kunitsyna, M.P. Mikhailova, Yu.P. Yakovlev 589

Thermal Stability in HgCdTe IR Photodiodes / J.M. Dell, T. Nguyen, C.A. Musca, J. Antoszewski, L. Faraone, R. Pal 595

Intersubband Transitions in In[subscript x]Ga[subscript 1-x]As/AlGaAs Multiple Quantum Wells for Long Wavelength Infrared Detection / Clayton L. Workman, Zhiming Wang, Wenquan Ma, Christi E. George, R. Panneer Selvam, Gregory J. Salamo, Qiaoying Zhou|cM. Omar Manasreh 607

Spectral Response Modification of Quantum Well Infrared Photodetector by Quantum Well Intermixing / J.C. Shin, W.J. Choi, I.K. Han, Y.J. Park, J.I. Lee, E.K. Kim, H.J. Kim, J.W. Choi 613

III-Nitride Materials and Devices

Preparation of Optoelectronic Devices Based on AIN/AlGaN Superlattices / M. Holtz, G. Kipshidze, A. Chandolu, J. Yun, B. Borisov, V. Kuryatkov, K. Zhu, S.N.G. Chu, S.A. Nikishin, H. Temkin 621

Dilute Group III-AsN: Bonding of Nitrogen in GaInAsN and AlGaAsN on GaAs and Realization of Long Wavelength (2.3 [mu]m) GaInAsN QWs on InP / D. Serries, T. Geppert, K. Kohler, P. Ganser, J. Wagner 627

Low Temperature Photoluminescence Studies of Narrow Bandgap GaAsSbN Quantum Wells on GaAs / K.E. Waldrip, E.D. Jones, N.A. Modine, F. Jalali, J.F. Klem, G.M. Peake 637

Interband Transitions in GaInNAs/GaAs Single Quantum Wells / M.O. Manasreh, D.J. Friedman, W.Q. Ma, C.L. Workman, C.E. George, G.J. Salamo 647

Influence of Low-Energy Electron Beam Irradiation on Defects in Activated Mg-Doped GaN / O. Gelhausen, M.R. Phillips, H.N. Klein, E.M. Goldys 653

Electrical Isolation of p-Type GaAsN Epitaxial Layers by Ion Irradiation / Q. Gao, J. Muller, P.N.K. Deenapanray, H.H. Tan, C.

Jagadish 659

The Compositional and Optical Characterizations of InGaAsN Alloy Semiconductor Grown by MOVPE / Sakuntam Sanorpim, Fumihiro Nakajima, Ryuji Katayama, Kentaro Onabe, Yashihiro Shiraki 665.

Notes:

"Symposium M, 'Progress in Semiconductor Materials II: Electronic and Optoelectronic Applications,' was held December 2-5 at the 2002 MRS Fall Meeting in Boston"--Pref. (p. xvii).

Includes bibliographical references and indexes.

ISBN:

1558996818

OCLC:

52628536