Mesoscopic electronics in solid state nanostructures / Thomas Heinzel.

Format:

Book

Author/Creator:

Heinzel, Thomas.

Contributor:

Alumni and Friends Memorial Book Fund.

Language:

English

Subjects (All):

Mesoscopic phenomena (Physics).

Nanostructures.

Physical Description:

337 pages : illustrations ; 25 cm

Place of Publication:

Weinheim : Wiley-VCH, 2003.

Summary:

This text treats electronic transport in the regime where conventional textbook models are no longer applicable, including the effect of electronic phase coherence, energy quantization, and single-electron charging. The book also provides an overview of semiconductor processing technologies and experimental techniques. With a number of examples and problems with solutions, this is an ideal introduction for students and beginning researchers in the field.

Contents:

1.1 Preliminary remarks 11

1.2 Mesoscopic transport 12

1.2.1 Ballistic transport 13

1.2.2 The quantum Hall effect and Shubnikov - de Haas oscillations 15

1.2.3 Size quantization 16

1.2.4 Phase coherence 17

1.2.5 Single electron tunnelling and quantum dots 17

1.2.6 Superlattices 19

1.2.7 Samples and experimental techniques 19

2 An Update of Solid State Physics 23

2.1 Crystal structures 24

2.2 Electronic energy bands 26

2.3 Occupation of energy bands 33

2.3.1 The electronic density of states 33

2.3.2 Occupation probability and chemical potential 34

2.3.3 Intrinsic carrier concentration 35

2.4 Envelope wave functions 36

2.5 Doping 40

2.6 Diffusive transport and the Boltzmann equation 43

2.6.1 The Boltzmann equation 45

2.6.2 The conductance predicted by the simplified Boltzmann equation 47

2.6.3 The magneto-resistivity tensor 49

2.7 Scattering mechanisms 50

2.8 Screening 53

3 Surfaces, Interfaces, and Layered Devices 59

3.1 Electronic surface states 60

3.1.1 Surface states in one dimension 60

3.1.2 Surfaces of 3-dimensional crystals 66

3.1.3 Band bending and Fermi level pinning 68

3.2 Semiconductor-metal interfaces 69

3.2.1 Band alignment and Schottky barriers 70

3.2.2 Ohmic contacts 74

3.3 Semiconductor heterointerfaces 75

3.4 Field effect transistors and quantum wells 78

3.4.1 The silicon metal-oxide-semiconductor FET (Si-MOSFET) 78

3.4.2 The Ga[Al]As high electron mobility transistor (GaAs-HEMT) 81

3.4.3 Other types of layered devices 83

3.4.4 Quantum confined carriers in comparison to bulk carriers 87

4 Experimental Techniques 93

4.1 Sample fabrication 93

4.1.1 Single crystal growth 95

4.1.2 Growth of layered structures 96

4.1.3 Lateral patterning 101

4.1.4 Metallization 108

4.1.5 Bonding 110

4.2 Elements of cryogenics 110

4.2.1 Properties of liquid helium 111

4.2.2 Helium cryostats 117

4.3 Electronic measurements on nanostructures 121

4.3.1 Sample holders 122

4.3.2 Application and detection of electronic signals 122

5 Important Quantities in Mesoscopic Transport 131

6 Magnetotransport Properties of Quantum Films 137

6.1 Landau quantization 137

6.1.1 2DEGs in perpendicular magnetic fields 137

6.1.2 The chemical potential in strong magnetic fields 140

6.2 The quantum Hall effect 143

6.2.1 Phenomenology 143

6.2.2 Origin of the integer quantum Hall effect 145

6.2.3 The quantum Hall effect and three dimensions 149

6.3 Elementary analysis of Shubnikov-de Haas oscillations 150

6.4 Some examples of magnetotransport experiments 153

6.4.1 Quasi-two-dimensional electron gases 153

6.4.2 Mapping of the probability density 155

6.4.3 Displacement of the quantum Hall plateaux 155

6.5 Parallel magnetic fields 157

7 Quantum Wires and Quantum Point Contacts 165

7.1 Diffusive quantum wires 167

7.1.1 Basic properties 167

7.1.2 Boundary scattering 169

7.2 Ballistic quantum wires 171

7.2.1 Phenomenology 171

7.2.2 Conductance quantization in QPCs 172

7.2.3 Magnetic field effects 177

7.2.4 The "0.7 structure" 181

7.2.5 Four-probe measurements on ballistic quantum wires 182

7.3 The Landauer-Buttiker formalism 184

7.3.1 Edge states 185

7.3.2 Edge channels 189

7.4 Further examples of quantum wires 190

7.4.1 Conductance quantization in conventional metals 190

7.4.2 Carbon nanotubes 192

7.5 Quantum point contact circuits 195

7.5.1 Non-ohmic behavior of collinear QPCs 195

7.5.2 QPCs in parallel 197

8 Electronic Phase Coherence 203

8.1 The Aharonov-Bohm effect in mesoscopic conductors 203

8.2 Weak localization 206

8.3 Universal conductance fluctuations 209

8.4 Phase coherence in ballistic 2DEGs 213

8.5 Resonant tunnelling and S - matrices 216

9 Singe Electron Tunnelling 225

9.1 The principle of Coulomb blockade 225

9.2 Basic single electron tunnelling circuits 227

9.2.1 Coulomb blockade at the double barrier 229

9.2.2 Current-voltage characteristics: the Coulomb staircase 232

9.2.3 The SET transistor 236

9.3 SET circuits with many islands; the single electron pump 241

10 Quantum Dots 249

10.1 Phenomenology of quantum dots 250

10.2 The constant interaction model 253

10.3 Beyond the constant interaction model 261

10.4 Shape of conductance resonances and current-voltage characteristics 269

10.5 Other types of quantum dots 270

11 Mesoscopic Superlattices 277

11.1 One-dimensional superlattices 277

11.2 Two-dimensional superlattices 279

A SI and cgs Units 289

B Correlation and Convolution 291

B.1 Fourier transofrmation 291

B.2 Convolutions 291

B.3 Correlation functions 292

C Capacitance Matrix and Electrostatic Energy 295

D The Transfer Hamiltonian 299.

Notes:

Includes bibliographical references (pages [323]-334) and index.

Local Notes:

Acquired for the Penn Libraries with assistance from the Alumni and Friends Memorial Book Fund.

ISBN:

3527403752

OCLC:

51270503