Modern microwave transistors : theory, design, and performance / Frank Schwierz, Juin J. Liou.

Format:

Book

Author/Creator:

Schwierz, Frank.

Contributor:

Liou, Juin J.

Language:

English

Subjects (All):

Microwave transistors.

Physical Description:

xii, 486 pages : illustrations ; 25 cm

Place of Publication:

Hoboken, N.J. : Wiley-Interscience, [2003]

Summary:

* Comprehensive and up-to-date coverage of currently used transistors for commercial and military applications. * Authors are recognized experts with previous publications. * Updated descriptions of state-of-the-art devices available on Wiley Web site.

Contents:

1 Background on Microwave Transistors 1

1.2 Microwave Transistor Figures of Merit 4

1.2.1 The Concept of Two-Port Networks 4

1.2.2 The Problem of Stability 6

1.2.3 Power Gain Definitions 7

1.2.4 The Characteristic Frequencies f[subscript T] and f[subscript max] 9

1.2.5 Minimum Noise Figure and Associated Gain 11

1.2.6 Output Power and Power-Added Efficiency 12

1.3 Historical View of Microwave Transistors 12

1.3.1 The Early Years 12

1.3.2 Development of Microwave Transistors with Heterostructures 15

1.3.3 Recent Developments 20

1.4 State of the Art of Microwave Transistors in the Year 2001 21

1.4.1 III-V FETs 21

1.4.2 BJTs and HBTs 28

1.4.3 Wide Bandgap Transistors 34

1.4.4 Si MOSFETs 37

1.5 Application Aspects 38

1.5.1 Civil Applications of Microwave Systems 38

1.5.2 Other Applications of Transistors with GHz Capabilities 40

1.5.3 Microwave Transistors for Wireless Communications up to 2.5 GHz 41

1.6 Summary and Outlook 43

2 Basic Semiconductor Physics 61

2.2 Free-Carrier Densities 63

2.2.1 Band Diagrams and Band Structure 63

2.2.2 Carrier Statistics 67

2.2.3 Approximations for the Carrier Densities 69

2.3 Carrier Transport 77

2.3.2 Classical Description of Carrier Transport 78

2.3.3 Nonclassical Description of Carrier Transport 91

2.4 PN Junctions 96

2.5 Schottky Junctions 106

2.6 Impact Ionization 108

2.7 Self-Heating 112

3 Heterostructure Physics 121

3.2 Band Diagrams 125

3.2.1 The Anderson Model 125

3.2.2 Built-In Voltage and Thickness of the Space-Charge Region 127

3.2.3 Bandgaps and Band Offsets 130

3.3 Carrier Transport Across Heterojunctions 134

3.3.1 Currents Across Spike Heterojunctions 134

3.3.2 Currents Across Smooth Heterojunctions 139

3.4 Carrier Transport Parallel to Heterojunctions and Two-Dimensional Electron Gas 140

3.4.1 Band Diagram 140

3.4.2 2DEG Sheet Density 142

3.4.3 2DEG Mobility 154

3.4.4 Spontaneous and Piezoelectric Polarization Effects 157

4 MESFETs 163

4.2 DC Analysis 166

4.2.1 The PHS Model 167

4.2.2 The Cappy Model 176

4.3 Small-Signal Analysis 180

4.3.1 Small-Signal Equivalent Circuit 180

4.3.2 Modeling the Equivalent Circuit Elements Based on the PHS Model 184

4.3.3 Modeling the Equivalent Circuit Elements Based on the Cappy Model 187

4.3.4 Small-Signal Parameters and Gains 189

4.4 Noise Analysis 194

4.4.1 Noise Mechanisms 194

4.4.2 Noise Modeling Using the PHS Noise Model 197

4.4.3 Noise Modeling Using the Cappy Noise Model 199

4.4.4 Minimum Noise Figure 199

4.5 Power Analysis 204

4.6 Issues of GaAs MESFETs 208

4.6.1 Transistor Structures 208

4.6.2 Low-Noise GaAs MESFETs 210

4.6.3 Power GaAs MESFETs 216

4.7 Issues of Wide Bandgap MESFETs 222

4.7.1 Transistor Structures 222

4.7.2 SiC MESFETs 223

4.7.3 GaN MESFETs 225

5 High Electron Mobility Transistors 231

5.2 DC Analysis 237

5.2.1 PHS-Like HEMT Model 237

5.2.2 Cappy-Like HEMT Model 246

5.3 Small-Signal Analysis 253

5.3.2 Modeling the Circuit Elements Based on the PHS-Like Model 254

5.3.3 Modeling the Circuit Elements Based on the Cappy-Like Model 259

5.3.4 The Concept of Modulation Efficiency 259

5.3.5 The Concept of Delay Times 262

5.4 Noise and Power Analysis 265

5.5 Issues of AlGaAs/GaAs HEMTs 266

5.5.1 Transistor Structures 266

5.5.2 Low-Noise AlGaAs/GaAs HEMTs 267

5.5.3 Power AlGaAs/GaAs HEMTs 267

5.6 Issues of GaAs pHEMTs 270

5.6.1 Transistor Structures 270

5.6.2 Low-Noise GaAs pHEMTs 271

5.6.3 Power GaAs pHEMTs 273

5.7 Issues of GaAs mHEMTs 273

5.7.1 Transistor Structures 273

5.7.2 Performance of GaAs mHEMTs 275

5.8 Issues of InP HEMTs 276

5.8.1 Transistor Structures 276

5.8.2 Low-Noise InP HEMTs 278

5.8.3 Power InP HEMTs 280

5.9 Issues of AlGaN/GaN HEMTs 280

5.9.1 Transistor Structures 280

5.9.2 AlGaN/GaN HEMT Performance 282

6 MOSFETs 292

6.2 Two-Terminal MOS Structure 295

6.2.1 Qualitative Description 295

6.2.2 Derivation of the Threshold Voltage 299

6.3 DC Analysis 302

6.3.2 PHS-Like MOSFET Model 303

6.3.3 Effective Mobility 307

6.3.4 Modifications of the Threshold Voltage 310

6.4 Small-Signal Analysis 313

6.4.1 MESFET/HEMT-Like Equivalent Circuit 313

6.4.2 Transmission Line Model 316

6.4.3 Compact Models 319

6.5 Noise and Power Analysis 320

6.6 Issues of Small-Signal Low-Noise MOSFETs 321

6.6.1 Transistor Structures 321

6.6.2 Si MOSFET Performance 322

6.7 Issues of Power MOSFETs 324

7 Silicon Bipolar Junction Transistors 334

7.2 DC Analysis 344

7.2.1 First-Order Model Development 344

7.2.2 Extensions of the First-Order Model 348

7.3 Small-Signal Analysis 371

7.3.1 Small-Signal Equivalent Circuit 371

7.3.2 Delay Time Analysis 376

7.3.3 Cutoff Frequency and Maximum Frequency of Oscillation 378

7.4 Noise Analysis 379

7.5 Power Analysis 384

7.6 Issues of Si BJTs 387

7.6.1 Transistor Structures 387

7.6.2 BJT Performance 390

7.6.3 Low-Noise BJTs 394

7.6.4 Power BJTs 395

8 Heterojunction Bipolar Transistors 400

8.2 DC Analysis 405

8.2.1 Minority Carrier and Bandgap Narrowing Parameters 405

8.2.2 HBTs with Smooth Emitter-Base Heterojunction 408

8.2.3 HBTs with Spike Emitter-Base Heterojunction 413

8.2.4 HBT Structures with a Reduced Spike 415

8.2.5 Other Issues Related to HBT DC Behavior 417

8.3 Small-Signal, Noise, and Power Analysis of HBTs 422

8.4 Self-Heating of HBTs 424

8.4.1 Temperature-Dependent Collector Current in Multifinger HBTs 424

8.4.2 Temperature Dependence of Current Gain 427

8.4.3 Current Gain Collapse 430

8.5 Issues of GaAs-Based HBTs 432

8.5.1 Transistor Structures 432

8.5.2 GaAs-Based HBT Performance 440

8.6 Issues of InP-Based HBTs 443

8.6.1 Transistor Structures 443

8.6.2 InP HBT Performance 448

8.7 Issues of SiGe HBTs 450

8.7.1 Transistor Structures 450

8.7.2 SiGe HBT Performance 457

A.2 Physical Constants and Unit Conversions 473

A.3 Microwave Frequency Bands 476

A.4 Two-Port Calculations 477

A.5 Important Material Properties of Selected Materials 481.

Notes:

Includes bibliographical references and index.

ISBN:

0471417785

OCLC:

50164756