Surface and thin film analysis : principles, instrumentation, applications / edited by H. Bubert and H. Jenett.

Format:

Book

Contributor:

Bubert, H. (Henning)

Jenett, H. (Holger)

Anne and Joseph Trachtman Memorial Book Fund.

Language:

English

Subjects (All):

Thin films--Surfaces--Analysis.

Thin films.

Electron spectroscopy.

Spectrum analysis.

Thin films--Surfaces.

Physical Description:

xvii, 336 pages : illustrations ; 25 cm

Place of Publication:

Weinheim : Wiley-VCH, [2002]

Summary:

The development and quality assurance of such high-tech materials as semiconductors or biopolymers demand special analytical methods for surfaces and thin films. This book presents the whole spectrum of methods available in a clear manner, moving beyond the basics, equipment and applications to compare these methods. This allows users to find the optimum method in solving any given problem. - The book is richly illustrated with 200 figures - Almost 900 references guide to the primary literature - A list of suppliers, each with full address, makes it easy to obtain the required equipment

Contents:

2 Electron Detection 6

2.1 Photoelectron Spectroscopy / H. Bubert, J. C. Riviere 6

2.1.2 Instrumentation 9

2.1.2.1 Vacuum Requirement 9

2.1.2.2 X-ray Sources 10

2.1.2.3 Synchrotron Radiation 12

2.1.2.4 Electron-energy Analyzer (CHA) 13

2.1.2.5 Spatial Resolution 14

2.1.3 Spectral Information and Chemical Shift 15

2.1.4 Quantification, Depth Profiling and Imaging 17

2.1.4.1 Quantification 17

2.1.4.2 Depth Profiling 18

2.1.4.3 Imaging 21

2.1.5 The Auger Parameter 22

2.1.6 Applications 23

2.1.6.1 Catalysis 23

2.1.6.2 Polymers 25

2.1.6.3 Corrosion and Passivation 25

2.1.6.4 Adhesion 27

2.1.6.5 Superconductors 28

2.1.6.6 Interfaces 30

2.1.7 Ultraviolet Photoelectron Spectroscopy (UPS) 32

2.2 Auger Electron Spectroscopy (AES) / H. Bubert, J. C. Riviere 32

2.2.2 Instrumentation 33

2.2.2.1 Vacuum Requirement 33

2.2.2.2 Electron Sources 34

2.2.2.3 Electron-energy Analyzer (CMA) 35

2.2.3 Spectral Information 36

2.2.4 Quantification and Depth Profiling 40

2.2.4.1 Quantification 40

2.2.4.2 Depth Profiling 42

2.2.5 Applications 42

2.2.5.1 Grain Boundary Segregation 42

2.2.5.2 Semiconductor Technology 44

2.2.5.3 Thin Films and Interfaces 45

2.2.5.4 Surface Segregation 47

2.2.6 Scanning Auger Microscopy (SAM) 48

2.3 Electron Energy-loss Spectroscopy (EELS) / R. Schneider 50

2.3.2 Instrumentation 52

2.3.3 Qualitative Spectral Information 55

2.3.3.1 Low-loss Excitations 57

2.3.3.2 Ionization Losses 59

2.3.3.3 Fine Structures 62

2.3.4 Quantification 65

2.3.5 Imaging of Element Distribution 67

2.4 Low-energy Electron Diffraction (LEED) / G. Held 71

2.4.1 Principles and History 71

2.4.2 Instrumentation 72

2.4.3 Qualitative Information 73

2.4.3.1 LEED Pattern 74

2.4.3.2 Spot-profile Analysis 76

2.4.3.3 Applications and Restrictions 78

2.4.4 Quantitative Information 79

2.4.4.2 Experimental Techniques 80

2.4.4.3 Computer Programs 81

2.4.4.4 Applications and Restrictions 82

2.5 Other Electron-detecting Techniques / J. C. Riviere 83

2.5.1 Auger Electron Appearance Potential Spectroscopy (AEAPS) 83

2.5.2 Ion (Excited) Auger Electron Spectroscopy (IAES) 83

2.5.3 Ion Neutralization Spectroscopy (INS) 83

2.5.4 Metastable Quenching Spectroscopy (MQS) 84

2.5.5 Inelastic Electron Tunneling Spectroscopy (IETS) 84

3 Ion Detection 86

3.1 Static Secondary Ion Mass Spectrometry (SSIMS) / H. F. Arlinghaus 86

3.1.2 Instrumentation 88

3.1.2.1 Ion Sources 88

3.1.2.2 Mass Analyzers 89

3.1.2.2.1 Quadrupole Mass Spectrometers 89

3.1.2.2.2 Time-of-flight Mass Spectrometers 90

3.1.3 Quantification 92

3.1.4 Spectral Information 94

3.1.5 Applications 96

3.1.5.1 Oxide Films 96

3.1.5.2 Interfaces 98

3.1.5.3 Polymers 100

3.1.5.4 Biosensors 101

3.1.5.5 Surface Reactions 103

3.1.5.6 Imaging 104

3.1.5.7 Ultra-shallow Depth Profiling 105

3.2 Dynamic Secondary Ion Mass Spectrometry (SIMS) / H. Hutter 106

3.2.2 Instrumentation 108

3.2.2.1 Ion Sources 108

3.2.2.2 Mass Analyzers 109

3.2.3 Spectral Information 111

3.2.4 Quantification 112

3.2.4.1 Relative Sensitivity Factors 112

3.2.4.2 Implantation Standards 112

3.2.4.3 MCs[superscript +] Ions 113

3.2.5 Mass Spectra 113

3.2.6 Depth Profiles 115

3.2.7 Imaging 116

3.2.7.1 Scanning SIMS 116

3.2.7.2 Direct Imaging Mode 117

3.2.8 3D-SIMS 118

3.2.9 Applications 119

3.2.9.1 Implantation Profiles 119

3.2.9.2 Layer Analysis 119

3.2.9.3 3D Trace Element Distribution 120

3.3 Electron-impact (EI) Secondary Neutral Mass Spectrometry (SNMS) / H. Jenett 122

3.3.1 General Principles of SNMS 122

3.3.2 Principles of Electron-beam and HF-Plasma SNMS 123

3.3.3 Instrumentation 125

3.3.4 Spectral Information 127

3.3.5 Quantification 128

3.3.6 Element Depth Profiling 130

3.3.7 Applications 131

3.4 Laser-SNMS / H. F. Arlinghaus 132

3.4.1 Principles 132

3.4.1.1 Non-resonant Laser-SNMS 132

3.4.1.2 Resonant Laser-SNMS 132

3.4.1.3 Experimental Setup 133

3.4.1.4 Ionization Schemes 133

3.4.2 Instrumentation 135

3.4.3 Spectral Information 135

3.4.4 Quantification 135

3.4.5 Applications 136

3.4.5.1 Non-resonant Laser-SNMS 136

3.4.5.2 Resonant Laser-SNMS 139

3.5 Rutherford Back-scattering Spectroscopy (RBS) / L. Palmetshofer 141

3.5.2 Instrumentation 144

3.5.3 Spectral Information 144

3.5.4 Quantification 146

3.5.5 Applications 147

3.6 Low-energy Ion Scattering (LEIS) / P. Bauer 150

3.6.2 Instrumentation 152

3.6.3 Information 154

3.6.3.1 Energy Information 154

3.6.3.2 Yield Information 155

3.6.4 Quantification 156

3.6.5 Applications 157

3.7 Elastic Recoil Detection Analysis (ERDA) / O. Benka 160

3.7.2 Fundamentals 162

3.7.3 Particle Identification Methods 164

3.7.4 Equipment 165

3.7.5 Data Analysis 166

3.7.6 Sensitivity and Depth Resolution 166

3.7.7 Applications 167

3.8 Nuclear Reaction Analysis (NRA) / O. Benka 170

3.8.3 Equipment and Depth Resolution 173

3.8.4 Applications 175

3.9 Other Ion-detecting Techniques / J. C. Riviere 177

3.9.1 Desorption Methods 177

3.9.1.1 Electron Stimulated Desorption (ESD) and Electron Stimulated Desorption Ion Angular Distribution (ESDIAD) 177

3.9.1.2 Thermal Desorption Spectroscopy (TDS) 178

3.9.2 Glow-discharge Mass Spectroscopy (GDMS) 178

3.9.3 Fast-atom Bombardment Mass Spectrometry (FABMS) 179

3.9.4 Atom Probe Microscopy 179

3.9.4.1 Atom Probe Field Ion Microscopy (APFIM) 180

3.9.4.2 Position-sensitive Atom Probe (POSAP) 180

4 Photon Detection 181

4.1 Total Reflection X-ray Fluorescence Analysis (TXRF) / L. Fabry, S. Phalke 181

4.1.2 Instrumentation 184

4.1.3 Spectral Information 187

4.1.4 Quantification 188

4.1.5 Applications 189

4.1.5.1 Particulate and Film-type Surface Contamination 189

4.1.5.2 Semiconductors 189

4.1.5.2.1 Depth Profiling by TXRF and Multilayer Structures 191

4.1.5.2.2 Vapor Phase Decomposition (VPD) and Droplet Collection 192

4.2 Energy-dispersive X-ray Spectroscopy (EDXS) / R. Schneider 194

4.2.2 Practical Aspects of X-ray Microanalysis and Instrumentation 196

4.2.3 Qualitative Spectral Information 202

4.2.4 Quantification 204

4.2.5 Imaging of Element Distribution 206

4.3 Grazing Incidence X-ray Methods for Near-surface Structural Studies / P. N. Gibson 208

4.3.1.1 Glancing Angle X-ray Geometry 208

4.3.1.2 Grazing Incidence X-ray Reflectivity (GXRR) 210

4.3.1.3 Glancing Angle X-ray Diffraction 211

4.3.1.4 ReflEXAFS 213

4.3.2 Experimental Techniques and Data Analysis 214

4.3.2.1 Grazing Incidence X-ray Reflectivity (GXRR) 214

4.3.2.2 Grazing Incidence Asymmetric Bragg (GIAB) Diffraction 215

4.3.3 Applications 217

4.3.3.1 Grazing Incidence X-ray Reflectivity (GXRR) 217

4.3.3.2 Grazing Incidence Asymmetric Bragg (GIAB) Diffraction 218

4.3.3.3 Grazing Incidence X-ray Scattering (GIXS) 220

4.3.3.4 ReflEXAFS 220

4.4 Glow Discharge Optical Emission Spectroscopy (GD-OES) / A. Quentmeier 221

4.4.2 Instrumentation 222

4.4.2.1 Glow Discharge Sources 222

4.4.2.2 Spectrometer 224

4.4.2.3 Signal Acquisition 224

4.4.3 Spectral Information 225

4.4.4 Quantification 225

4.4.5 Depth Profiling 226

4.4.6 Applications 228

4.4.6.1 dc GD Sources 228

4.4.6.2 rf GD Sources 230

4.5 Surface Analysis by Laser Ablation / M. Bolshov 231

4.5.2 Instrumentation 232

4.5.2.1 Types of Lasers 232

4.5.2.2 Different Schemes of Laser Ablation 233

4.5.3 Depth Profiling 235

4.6 Ion Beam Spectrochemical Analysis (IBSCA) / V.

Rupertus 240

4.6.2 Instrumentation 242

4.6.3 Spectral and Analytical Information 243

4.6.4 Quantitative Analysis 244

4.6.5 Applications 246

4.7 Reflection Absorption IR Spectroscopy (RAIRS) / K. Hinrichs 249

4.7.1 Instrumentation 249

4.7.3 Applications 251

4.8 Surface-enhanced Raman Scattering (SERS) / W. Hill 254

4.8.1 Principles 254

4.8.2 Surface-Enhanced Raman Scattering (SERS) 256

4.8.3 Instrumentation 257

4.8.4 Spectral Information 259

4.8.5 Quantification 259

4.8.6 Applications 260

4.8.6.1 Unenhanced Raman Spectroscopy at Smooth Surfaces 260

4.8.6.2 Porous Materials 261

4.8.6.3 SERS 262

4.8.6.4 Near-Field Raman Spectroscopy 263

4.8.7 Non-linear Optical Spectroscopy 264

4.9 UV-Vis-IR Ellipsometry (ELL) / B. Gruska, A. Roseler 265

4.9.2 Instrumentation 267

4.9.3 Applications 269

4.9.3.1 UV-Vis-NIR Spectral Range 269

4.9.3.2 Infrared Ellipsometry 271

4.10 Other Photon-detecting Techniques / J. C. Riviere 274

4.10.1 Appearance Potential Methods 274

4.10.1.1 Soft X-ray Appearance Potential Spectroscopy (SXAPS) 274

4.10.1.2 Disappearance Potential Spectroscopy (DAPS) 275

4.10.2 Inverse Photoemission Spectroscopy (IPES) and Bremsstrahlung Isochromat Spectroscopy (BIS) 275

5 Scanning Probe Microscopy 276

5.1 Atomic Force Microscopy (AFM) / G. Friedbacher 277

5.1.1 Principles 277

5.1.2 Instrumentation 279

5.1.3 Applications 281

5.2 Scanning Tunneling Microscopy (STM) / G. Friedbacher 284

5.2.2 Instrumentation 286

5.2.3 Lateral and Spectroscopic Information 287

5.2.4 Applications 288.

Notes:

Includes bibliographical references (pages 303-324) and index.

Local Notes:

Acquired for the Penn Libraries with assistance from the Anne and Joseph Trachtman Memorial Book Fund.

ISBN:

3527304584

OCLC:

47939429