Optoelectronics / Emmanuel Rosencher, Borge Vinter.

Format:

Book

Author/Creator:

Rosencher, Emmanuel, 1952-

Contributor:

Vinter, Borge.

Edith E. Clark Endowment Fund.

Standardized Title:

Optoélectronique. English

Language:

English

French

Subjects (All):

Optoelectronics.

Optoelectronic devices.

Physical Description:

xvi, 725 pages : illustrations ; 26 cm

Place of Publication:

Cambridge, UK ; New York, NY : Cambridge University Press, 2002.

Summary:

Optoelectronics is a practical and self-contained textbook written for graduate students and engineers.

Contents:

Properties of common semiconductors xvii

1 Quantum mechanics of the electron 1

1.2 The postulates of quantum mechanics 1

1.3 The time-independent Schrodinger equation 6

1.3.1 Stationary states 6

1.3.2 Calculation of stationary states in a one-dimensional potential 7

1.4 The quantum well 8

1.4.1 The general case 8

1.4.2 The infinite square well 14

1.5 Time-independent perturbation theory 15

1.6 Time-dependent perturbations and transition probabilities 18

1.6.1 The general case 18

1.6.2 Sinusoidal perturbation 20

1.7 The density matrix 23

1.7.1 Pure quantum ensembles 24

1.7.2 Mixed quantum ensembles 24

1.7.3 Density matrix and relaxation time for a two-level system 26

1.A Problems posed by continuums: the fictitious quantum box and the density of states 29

1.B Perturbation on a degenerate state 33

1.C The quantum confined Stark effect 37

1.D The harmonic oscillator 41

1.E Transition probabilities and Rabi oscillations 50

2 Quantum mechanics of the photon 56

2.2 Maxwell's equations in reciprocal space 56

2.3 Properties of the Fourier transform 58

2.4 Quantization of electromagnetic waves 61

2.5 The photon 63

2.6 The coherent state 67

2.7 Blackbody radiation 71

2.A Radiation field for an oscillating charge: the Lorentz gauge 76

2.B Thermography 84

3 Quantum mechanics of electron

photon interaction 91

3.2 Dipolar interaction Hamiltonian for electrons and photons 91

3.3 Linear optical susceptibility obtained by the density matrix 93

3.4 Linear optical susceptibility: absorption and optical gain 96

3.5 The rate equations 100

3.5.1 Adiabatic approximation and corpuscular interpretation 100

3.5.2 Stimulated emission 101

3.5.3 Absorption saturation 102

3.6 Spontaneous emission and radiative lifetime 104

3.6.1 Spontaneous emission 104

3.6.2 The rate equations including spontaneous emission 109

3.7 Polychromatic transitions and Einstein's equations 110

3.8 Rate equations revisited 111

3.8.1 Monochromatic single-mode waves 112

3.8.2 Multimode monochromatic waves 113

3.8.3 Polychromatic waves 114

3.A Homogeneous and inhomogeneous broadening: coherence of light 115

3.A.1 Homogeneous broadening 116

3.A.2 Inhomogeneous broadening 120

3.B Second-order time-dependent perturbations 123

3.C Einstein coefficients in two limiting cases: quasi-monochromatic and broadband optical transitions 131

3.D Equivalence of the A - p and D - E Hamiltonians and the Thomas

Reiche

Kuhn sum rule 133

4 Laser oscillations 139

4.2 Population inversion and optical amplification 139

4.2.1 Population inversion 139

4.2.2 Optical amplification and gain saturation 141

4.3 Three- and four-level systems 143

4.4 Optical resonators and laser threshold 146

4.5 Laser characteristics 150

4.5.1 Internal laser characteristics and gain clamping 150

4.5.2 Output power 152

4.5.3 Spectral characteristics 154

4.6 Cavity rate equations and the dynamic behaviour of lasers 156

4.6.1 Damped oscillations 158

4.6.2 Laser cavity dumping by loss modulation (Q-switching) 159

4.6.3 Mode locking 163

4.A The effect of spontaneous emission and photon condensation 167

4.B Saturation in laser amplifiers 171

4.C Electrodynamic laser equations: electromagnetic foundations for mode locking 178

4.D The Schawlow

Townes limit and Langevin-noise force 185

4.E A case study: diode pumped lasers 193

5 Semiconductor band structure 199

5.2 Crystal structures, Bloch functions, and the Brillouin zone 199

5.3 Energy bands 204

5.4 Effective mass and density of states 206

5.5 Dynamic interpretation of effective mass and the concept of holes 210

5.6 Carrier statistics in semiconductors 216

5.6.1 Fermi statistics and the Fermi level 216

5.6.2 Intrinsic semiconductors 221

5.6.3 Doped semiconductors 222

5.6.4 Quasi-Fermi level in a non-equilibrium system 224

5.A The nearly free electron model 227

5.B Linear combination of atomic orbitals: the tight binding model 230

5.C Kane's k - p method 234

5.D Deep defects in semiconductors 242

6 Electronic properties of semiconductors 245

6.2 Boltzmann's equation 245

6.3 Scattering mechanisms 251

6.4 Hot electrons 257

6.4.1 Warm electrons 257

6.4.2 Hot electrons: saturation velocity 258

6.4.3 Hot electrons: negative differential velocity 260

6.5 Recombination 261

6.6 Transport equations in a semiconductor 266

6.A The Hall effect 271

6.B Optical phonons and the Frohlich interaction 273

6.B.1 Phonons 273

6.B.2 The Frohlich interaction 280

6.C Avalanche breakdown 285

6.D Auger recombination 289

7 Optical properties of semiconductors 296

7.2 Dipolar elements in direct gap semiconductors 296

7.3 Optical susceptibility of a semiconductor 301

7.4 Absorption and spontaneous emission 306

7.5 Bimolecular recombination coefficient 313

7.6 Conditions for optical amplification in semiconductors 316

7.A The Franz

Keldysh-effect electromodulator 321

7.B Optical index of semiconductors 328

7.B.1 Mid- and far-infrared regions 329

7.B.2 Near gap regime 330

7.C Free-carrier absorption 333

8 Semiconductor heterostructures and quantum wells 342

8.2 Envelope function formalism 344

8.3 The quantum well 350

8.4 Density of states and statistics in a quantum well 354

8.5 Optical interband transitions in a quantum well 358

8.5.1 Hole states in the valence bands 358

8.5.2 Optical transitions between the valence and conduction bands 359

8.6 Optical intersubband transitions in a quantum well 365

8.7 Optical absorption and angle of incidence 369

8.7.1 Summary for interband and intersubband transition rates 369

8.7.2 Influence of the angle of incidence 370

8.A Quantum wires and boxes 377

8.B Excitons 380

8.B.1 Three-dimensional excitons 381

8.B.2 Two-dimensional excitons 385

8.C Quantum confined Stark effect and the SEED electromodulator 388

8.D Valence subbands 392

9 Waveguides 396

9.2 A geometrical approach to waveguides 396

9.3 An oscillatory approach to waveguides 400

9.4 Optical confinement 407

9.5 Interaction between guided modes: coupled mode theory 410

9.A Optical coupling between guides: electro-optic switches 414

9.B Bragg waveguides 421

9.C Frequency conversion in non-linear waveguides 427

9.C.1 TE mode in

TE mode out 427

9.C.2 TE mode in

TM mode out 432

9.D Fabry

Perot cavities and Bragg reflectors 434

9.D.1 The Fabry

Perot cavity 437

9.D.2 Bragg mirrors 442

10 Elements of device physics 447

10.2 Surface phenomena 448

10.3 The Schottky junction 451

10.4 The p

n junction 456

10.A A few variants of the diode 466

10.A.1 p

n heterojunction diode 466

10.A.2 The p

i

n diode 467

10.B Diode leakage current 470

11 Semiconductor photodetectors 475

11.2 Distribution of carriers in a photoexcited semiconductor 475

11.3 Photoconductors 481

11.3.1 Photoconduction gain 481

11.3.2 Photoconductor detectivity 484

11.3.3 Time response of a photoconductor 486

11.4 Photovoltaic detectors 488

11.4.1 Photodiode detectivity 492

11.4.2 Time response of a photodiode 494

11.5 Internal emission photodetector 497

11.6 Quantum well photodetectors (QWIPs) 500

11.7 Avalanche photodetectors 509

11.A Detector noise 513

11.A.1 Fluctuations 514

11.A.2 Physical origin of noise 518

11.A.3 Thermal noise 518

11.A.4 Generation

recombination noise 521

11.A.5 Multiplication noise 525

11.B Detectivity limits: performance limits due to background (BLIP) 530

12 Optical frequency conversion 538

12.2 A mechanical description for second harmonic frequency generation 538

12.3 An electromagnetic description of quadratic non-linear optical interaction 543

12.4 Optical second harmonic generation 546

12.5 Manley

Rowe

relations 550

12.6 Parametric amplification 551

12.7 Optical parametric oscillators (OPOs) 554

12.7.1 Simply resonant optical parametric oscillators (SROPOs) 554

12.7.2 Doubly resonant optical parametric oscillator (DROPO) 557

12.8 Sum frequency, difference frequency, and parametric oscillation 560

12.A A quantum model for quadratic non-linear susceptibility 565

12.B Methods for achieving phase matching in semiconductors 572

12.B.1 Birefringent phase matching 573

12.B.2 Quasi-phase matching 579

12.C Pump depletion in parametric interactions 582

12.D Spectral and temporal characteristics of optical parametric oscillators 587

12.E Parametric interactions in laser cavities 596

12.F Continuous wave optical parametric oscillator characteristics 602

12.F.1 Singly resonant OPO 603

12.F.2 Doubly resonant OPO: the balanced DROPO 608

12.F.3 Doubly resonant OPO: the general case 610

13 Light emitting diodes and laser diodes 613

13.2 Electrical injection and non-equilibrium carrier densities 613

13.3 Electroluminescent diodes 617

13.3.1 Electroluminescence 617

13.3.2 Internal and external efficiencies for LEDs 619

13.3.3 A few device issues 623

13.4 Optical amplification in heterojunction diodes 624

13.5 Double heterojunction laser diodes 629

13.5.1 Laser threshold 629

13.5.2 Output power 634

13.6 Quantum well laser diodes 637

13.6.1 Optical amplification in a quantum well structure: general case 637

13.6.2 Transparency threshold 641

13.6.3 Laser threshold for a quantum well laser 647

13.6.4 Scaling rule for multi-quantum well lasers 649

13.7 Dynamic aspects of laser diodes 652

13.8 Characteristics of laser diode emission 655

13.8.1 Spectral distribution 655

13.8.2 Spatial distribution 656

13.A Distributed feedback (DFB) lasers 660

13.B Strained quantum well lasers 665

13.C Vertical cavity surface emitting lasers (VCSELs) 671

13.C.1 Conditions for achieving threshold in a VCSEL 671

13.C.2 VCSEL performance 675

13.D Thermal aspects of laser diodes and high power devices 676

13.E Spontaneous emission in semiconductor lasers 683

13.F Gain saturation and the K factor 690

13.G Laser diode noise and linewidth 696

13.G.1 Linewidth broadening 700

13.G.2 Relative intensity noise (RIN) and optical link budget 701

13.H Unipolar quantum cascade lasers 704

13.I Mode competition: cross gain modulators 708.

Notes:

Includes bibliographical references and index.

Local Notes:

Acquired for the Penn Libraries with assistance from the Edith E. Clark Endowment Fund.

ISBN:

0521778131

OCLC:

46641861

Online:

Publisher description