Low-dimensional nitride semiconductors / edited by Bernard Gil.

Format:

Book

Contributor:

Gil, B. (Bernard)

Series:

Series on semiconductor science and technology ; 9.

Series on semiconductor science and technology ; 9

Language:

English

Subjects (All):

Semiconductors--Materials.

Semiconductors.

Nitrides.

Physical Description:

xv, 467 pages, 4 unnumbered pages of plates : illustrations (some color) ; 25 cm.

Place of Publication:

Oxford ; New York : Oxford University Press, 2002.

Summary:

Optoelectronics and electronics of the years to come are likely to change dramatically. Most of the outdoor lighting systems will be replaced by light-emitting diodes that operate in the whole visible part of the electromagnatic spectrum. Transistors operating at high frequency and with high power are under development and likely to hit the market very rapidly. Compact solid-state lasers that operate in the near-ultraviolet range are going to be utilized for such widely used applications as read-write tasks in printer and CD drives. Ultraviolet detectors will be used at a wide scale for many application, ranging from flame detectors to medical instruments. This book concerns itself with the questions why nitride semiconductors are so promising over such a wide range of applications, what the current issues are in the research laboratories, and what the prospects of new electronic devices are in the dawn of the twenty-first century.

Contents:

1 GaN or the history of a scientific explosion driven by applications and markets / Jean-Yves Duboz, Jean Charles Garcia 1

1.1 Light-emitting diodes (LEDs) 1

1.2 Lasers 3

1.3 Ultraviolet detectors 6

1.4 Electronics for microwave applications 8

1.5 High-temperature electronics 10

2 Nitrides as seen by a theorist / Friedhelm Bechstedt 11

2.2 Basic properties 14

2.3 Strain effects 25

2.4 Alloys 35

2.5 Spontaneous polarization fields 45

3 The homoepitaxial challenge for low-dimensional nitrides / Izabella Grzegory, Sylwester Porowski 57

3.2 Low dislocation density substrates for low dislocation density GaN-based structures 59

3.3 GaN single crystalline substrates by the HNPS method 61

3.4 GaN homoepitaxy on GaN pressure-grown substrates 65

3.5 Quantum structures 67

4 HVPE-GaN quasisubstrates for nitride device structures / Tanya Paskova, Bo Monemar 79

4.2 Thermodynamic basis 80

4.3 HVPE-GaN thick layers

heteroepitaxial growth 82

4.4 Growth optimizations and material improvements 87

4.5 Free-standing GaN films 92

4.6 Homoepitaxial regrowth on HVPE-GaN quasi-substrates 97

5 Growth optimization of low-dimensional nitrides by metalorganic vapor phase epitaxy and dislocation control / Hiroshi Amano, Satoshi Kamiyama, Isamu Akasaki 105

5.1 Growth of group III nitrides on sapphire (low temperature deposited buffer layer) 105

5.2 Conductivity control of n-type nitrides 109

5.3 Realization of p-type nitrides 109

5.4 Fabrication of low-dimensional nitrides 109

5.5 Quantum confined Stark effect and piezoelectricity 113

5.6 Enhancement of impurity activation by the use of low-dimensional structures 114

5.7 Control of threading dislocations 115

6 The growth of low-dimensional nitrides by molecular beam epitaxy / Nicolas Grandjean, Benjamin Damilano, Jean Massies 121

6.2 MBE growth of group-III nitrides: a resume 122

6.3 AlGaN/GaN quantum well structures 131

6.4 GaN/AIN quantum dot structures 136

6.5 InGaN/GaN quantum structures 140

7 Topological defects and low-dimensional nitride layers / Pierre Ruterana 151

7.2 Crystallograpic considerations 152

7.3 Extended defects in III-nitrides 157

7.4 Growth mechanisms in epitaxial layers 167

7.5 Chemical ordering 173

7.6 GaN/AIN quantum dots 177

7.7 Large misfits and strain effects on the growth of InGaN 181

8 Excitons in GaN-based low-dimensional systems / Bernard Gil 191

8.1 CW spectroscopy in GaN-AlGaN quantum wells 191

8.2 Time-resolved spectroscopy 196

9 Indium gallium nitride (InGaN)

optical properties and technological implications / Kevin P. O'Donnell 211

9.2 InGaN basics 213

9.3 Photoluminescence of InGaN epilayers 214

9.4 Origin of luminescence in InGaN devices 228

9.5 Prospects 231

10 The optical properties of InGaN-based quantum wells and quantum dots / Yoichi Kawakami 233

10.2 Bowing parameter of bandgap energies in In[subscript x]Ga[subscript 1-x]N alloys 233

10.3 Piezoelectric fields in strained In[subscript x]Ga[subscript 1-x]N layers 235

10.4 Strain-induced shift of bandgap 236

10.5 Transition energy in In[subscript x]Ga[subscript 1-x]N/GaN quantum wells 237

10.6 Miscibility gap and compositional fluctuations in In[subscript x]Ga[subscript 1-x]N alloys 238

10.7 Localization-induced effect 239

10.8 Anomalous temperature dependence of emission peak energies 242

10.9 Temperature dependence of radiative recombination lifetimes 244

10.10 Mobility edge behavior 246

10.11 Spatial inhomogenity of luminescence 246

10.12 Origin of localization center 248

10.13 Artificially grown In[subscript x]Ga[subscript 1-x]N quantum dots 249

11 Electron-phonon interaction in GaN and its low-dimensional structures / Xue Bing Zhang, Bernard Gil 257

11.2 Basic theory of electron-photon interaction in GaN 258

11.3 LO phonon replica 262

11.4 Band-edge excitonic linewidth 267

11.5 Cooling of hot carriers in GaN 271

11.6 Exciton-phonon interaction in nitride low-dimensional structures 277

12 Low-dimensional nitrides: a laboratory for ultrafast physics / Alexey Kavokin, Guillaume Malpuech 287

12.2 Formalism 290

12.3 RRS measurement as a tool to characterize the QW excitons 293

12.4 Analysis of the reflection spectra of GaN/AlGaN QWs 296

12.5 Polariton laser on GaN: utopia or realistic perspective? 302

13 Optoelectronic devices based on low-dimensional nitride heterostructures / Andreas Hangleiter 311

13.2 Peculiarities of nitride heterostrucures 311

13.3 Light-emitting diodes 317

13.4 Laser diodes 324

14 GaN-based modulation doped FETs / Hadis Morkoc, Aldo Di Carlo, Roberto Cingolani 341

14.2 Electron transport properties in GaN/AlGaN heterostructures 343

14.3 Bulk mobility 345

14.4 Polarization effects, mobility, and electron concentration in 2DEG systems 351

14.5 Partial strain relaxation 364

14.6 Low field transport in 2DEG systems 368

14.7 High field transport 373

14.8 Modulation doped field effect transistors (MODFETs) 374

14.9 MODFET model 375

14.10 Drain current model in MODFITs 383

14.11 I-V characteristics 385

14.12 Experimental considerations 387

14.13 Schottky barriers for gates 389

14.14 Contacts to GaN 393

14.15 AlGaN/GaN MODFETs 394

14.16 Experimental performance of MODFETs 394

14.17 Anomalies in GaN/AlGaN MODFETs 403

15 Mixed III-V-N semiconductors: a challenge for tomorrow? / Eric Tournie, Bernard Gil 415

15.2 Band structure phenomena in III-V-N alloys 416

15.3 Epitaxial growth of III-V-N alloys and heterostructures 432

15.4 Applications of III-V-N alloys and heterostructures 441

15.5 Challenges 447.

Notes:

Includes bibliographical references and index.

ISBN:

019850974X

OCLC:

48931606