GaN and related alloys--2001 : symposium held November 26-30, 2001, Boston, Massachusetts, U.S.A./ editors, John E. Northrup ... [and others].

Format:

Book

Contributor:

Northrup, John E.

Series:

Materials Research Society symposia proceedings ; v. 693.

Materials Research Society symposia proceedings

Language:

English

Subjects (All):

Gallium nitride--Congresses.

Gallium nitride.

Gallium alloys--Congresses.

Gallium alloys.

Semiconductors--Materials--Congresses.

Semiconductors.

Semiconductors--Materials.

Electroluminescent devices--Materials--Congresses.

Electroluminescent devices.

Electroluminescent devices--Materials.

Laser materials--Congresses.

Laser materials.

Epitaxy--Congresses.

Epitaxy.

Genre:

Conference papers and proceedings.

Physical Description:

xxi, 860 pages : illustrations ; 24 cm.

Place of Publication:

Warrendale, Pa. : Materials Research Society, [2002]

Contents:

Molecular Beam Epitaxy and Growth Kinetics

Impact of In Content on the Structural and Optical Properties of (In, Ga) N/GaN Multiple Quantum Wells Grown by Plasma-Assisted Molecular Beam Epitaxy / Patrick Waltereit, James S. Speck 3

Study of Interface Properties of InN and InN-Based Heterostructures by Molecular Beam Epitaxy / Hai Lu, William J. Schaff, Lester F. Eastman, Colin Wood 9

Point Defects and Doping

Optical Properties of Carbon Doped Cubic GaN Epilayers Grown on GaAs (001) Substrate by Molecular Beam Epitaxy / D.J. As, U. Kohler, K. Lischka 17

Vibrational Spectroscopy of GaN: Mg Under Pressure / M.D. McCluskey, K.K. Zhuravlev, M. Kneissl, W. Wong, D. Treat, S. Limpijumnong, C.G. Van de Walle, N.M. Johnson 23

Novel Configuration of Mg-H Complexes in GaN / Sukit Limpijumnong, John E. Northrup, Chris G. Van de Walle 29

Photoluminescence of Zn-Doped GaN Grown by HVPE / M.A. Reshchikov, D. Huang, H. Morkoc, R.J. Molnar 35

Raman Studies on Oxygen Doped GaN Grown by Molecular Beam Epitaxy / D. Papadimitriou, A.J. Ptak, D. Korakakis, N.C. Giles, T.H. Myers 41

GaN[subscript x]As[subscript 1-x] Growth by Molecular Beam Epitaxy With Dispersive Nitrogen / S.Z. Wang, S.F. Yoon, T.K. Ng, W.K. Loke, W.J. Fan 49

Growth of Carbon-Nitrogen Films With a Broad Beam RF Ion Source / David C. Ingram, William C. Lanter, Charles A. DeJoseph, Asghar Kayani 55

Effect of Excimer Laser Annealing on Optical Properties of GaN Films Deposited by RF Magnetron Sputtering / Man Young Sung, Woong-Je Sung, Young-Il Lee, Chun-Il Park, Woo-Beom Choi, Sangsig Kim 61

Surface Instability and Associated Roughness of Pendeo-Epitaxy GaN (0001) Films Grown Via Metalorganic Vapor Phase Epitaxy / Amy M. Roskowski, Peter Q. Miraglia, Edward A. Preble, Sven Einfeldt, Robert F. Davis 67

Three-Dimensional Modeling of the High Pressure Organometallic Chemical Vapor Deposition of InN Using Trimethylindium and Ammonia / Sonya D. McCall, Klaus J. Bachmann 73

Layer by Layer Growth of GaN Films by Low Temperature Cyclic Process / P. Sanguino, S. Koynov, M. Niehus, L.V. Melo, R. Schwarz, H. Alves, B.K. Meyer 81

High Efficiency UV-Emission at 345 nm from InAlGaN Light-Emitting Diodes / A. Kinoshita, H. Hirayama, M. Ainoya, T. Yamabi, A. Hirata, Y. Aoyagi 87

Structural and Optical Characteristics of Laterally Overgrown GaN Pyramids on (111) Si Substrate / Yong-Hoon Cho, H.M. Kim, T.W. Kang, J.J. Song, W. Yang 93

Apriori Process-Property Relationships of GaN Epitaxial Growth in Ga/N/H/C/O Systems / Constantine Loukeris, Shumaila Khan, Christos G. Takoudis 99

Growth of GaN Epilayers on Si(111) Substrates Using Multiple Buffer Layers / P.R. Hageman, S. Haffouz, A. Grzegorczk, V. Kirilyuk, P.K. Larsen 105

Double Pendeo-Epitaxial Growth of GaN Films With Low Density of Threading Dislocation / Y.K. Hong, H.S. Jung, C-H. Hong, M.H. Kim, S-J. Leem 111

V-III Ratio Effect on Cubic GaN Grown by RF Plasma Assisted Gas Source MBE / Li-Wei Sung, Hao-Hsiung Lin, Chih-Ta Chia 117

Microstructure of ELO-GaN Layers Grown by Hydride Vapor Phase Epitaxy / Silvija Gradecak, Volker Wagner, Marc Ilegems, Fabienne Bobard, Pierre Stadelmann 123

Quantitative Defect Analysis of GaN Thick Films by TEM and AFM / Praveena Bhaskara, Changmo Sung, David Bliss, Michael Suscavage 129

Effect of Additional HCl on the Surface Morphology of High Quality GaN on Sapphire by HVPE / X.Q. Xiu, R. Zhang, D.Q. Lu, L. Gu, B. Shen, Y. Shi, Y.D. Zheng 135

White Beam Synchrotron X-ray Topography and X-ray Diffraction Measurements of Epitaxial Lateral Overgrowth of GaN / W.M. Chen, P.J. McNally, K. Jacobs, T. Tuomi, A.N. Danilewsky, D. Lowney, J. Kanatharana, L. Knuuttila, J. Riikonen 141

Growth of GaN:Sb MBE-Layers / P. Cristea, D.G. Ebling, K.W. Benz 147

Band-Gap Engineering in Amorphous/Microcrystalline Sc[subscript x]Ga[subscript 1-x]N / M.E. Little, M.E. Kordesch 153

Growth of Gallium Nitride Textured Films and Nanowires on Polycrystalline Substrates at sub-Atmospheric Pressures / Hari Chandrasekaran, Mahendra K. Sunkara 159

Microstructural Characterization of GaN-GaAs Alloys Grown on (001) GaAs by Molecular Beam Epitaxy / Hyonju Kim, T.G. Andersson, U. Sodervall, C. Jager, W. Jager, M. Albrecht, G. Bosker, N.A. Stolwijk 165

Layer Thickness Dependence of Strain in GaN Grown by HVPE / Guy Gwang Sim, P.W. Yu, D.C. Reynolds, D.C. Look, Sang Soo Kim, D.Y. Noh 171

Effect of High Temperature Single and Multiple AIN Intermediate Layers on N-Polar and Ga-Polar GaN Grown by Molecular Beam Epitaxy / F. Fedler, J. Stemmer, R.J. Hauenstein, T. Rotter, A.M. Sanchez, A. Ponce, S.I. Molina, D. Mistele, H. Klausing, O. Semchinova, J. Aderhold, J. Graul 177

Characterization of G-R Noise in GaN Films Grown by RF-MBE on Intermediate-Temperature Buffer Layers / W.K. Fong, B.H. Leung, C.F. Zhu, Charles Surya 183

Structural Properties of GaN Films Grown by Molecular Beam Epitaxy on Vicinal SiC(0001) / C.D. Lee, R.M. Feenstra, O. Shigiltchoff, R.P. Devaty, W.J. Choyke 189

Two Step Growth of InN Films on Sapphire (0001) Substrates Without Nitridation Process by RF-MBE / Tomohiro Yamaguchi, Yoshiki Saito, Kenji Kano, Tomo Muramatsu, Tsutomu Araki, Yasushi Nanishi, Nobuaki Teraguchi, Akira Suzuki 195

Investigation of the Optimum Growth Conditions of Wide-Bandgap Quaternary InAlGaN for UV-LEDs / T. Yamabi, A. Kinoshita, H. Hirayama, M. Ainoya, A. Hirata, T. Araki, Y. Nanishi, Y. Aoyagi 201

Optical and Structural Properties of Mn-Implanted GaN Films / J. Xu, J. Li, R. Zhang, X.Q. Xiu, D.Q. Lu, S.L. Gu, B. Shen, Y. Shi, Y.D. Zheng 207

Electroluminescence and Photoluminescence Studies of a Nitride-Rich GaN[subscript 1-x]P[subscript x] SQW Structure LED Grown By Laser-Assisted Metal-Organic Chemical Vapor Deposition / Junjiroh Kikawa, Seikoh Yoshida, Yoshiteru Itoh 213

New Buffer Layer Technique Using Underlying Epitaxial AIN Films for High-Quality GaN Growth / Tomohiko Shibata, Yoshihiro Kida, Hideto Miyake, Kazumasa Hiramatsu, Keiichiro Asai, Teruyo Nagai, Shigeaki Sumiya, Mitsuhiro Tanaka, Osamu Oda 219

Synthesis of Oxygen-Free Nanosized InN by Pulse Discharge / Wei-Dong Yang, K.W. Cheah, Pei-Nan Wang, Fu-Ming Li 225

Removal of 6H-SiC Substrate Influence When Evaluating GaN Thin Film Properties Via X-ray / Edward A. Preble, Peter Q. Miraglia, Amy M. Roskowski, Sven Einfeldt, Robert F. Davis 233

Formation of GaN Self-Organized Nanotips by Nanomasking Effect / Harumasa Yoshida, Tatsuhiro Urushido, Hideto Miyake, Kazumasa Hiramatsu 239

Lateral Growth of InN on GaN/Sapphire / Fuh-Hsiang Yang, Jih-Hsien Hwang, Kuei-Hsien Chen, Ying-Jay Yang 245

Micro-Raman Scattering From Hexagonal GaN, AIN, and Al[subscript x]Ga[subscript 1-x]N Grown on (111) Oriented Silicon: Stress Mapping of Cracks / C. Ramkumar, T. Prokofyeva, M. Seon, M. Holtz, K. Choi, J. Yun, S.A. Nikishin, H. Temkin 251

Light Emitters

400-nm Band AlGaInN-Based High Power Laser Diodes / Takeharu Asano, Motonobu Takeya, Tsuyoshi Tojyo, Shinro Ikeda, Takashi Mizuno, Shinichi Ansai, Shu Goto, Satoru Kijima, Tomonori Hino, Shiro Uchida, Masao Ikeda 259

Defects Created by 25 keV Hydrogen Implantation in n-Type GaN / F.D. Auret, W.E. Meyer, H.A. van Laarhoven, S.A. Goodman, M.J. Legodi, B. Beaumont, P. Gibart 271

Quaternary AlInGaN MQWs for Ultraviolet LEDs / J.P. Zhang, J.W. Yang, V. Adivarahan, H.M. Wang, Q. Fareed, E. Kuokstis, A. Chitnis, M. Shatalov, G. Simin, M. Asif Khan, R. Gaska, M.S. Shur 277

Composition Control During Growth of AlGaN Cladding Layers for InGaN-MQW Lasers With Ridge Formed by Selective Re-growth (RiS-type Lasers) / Akitaka Kimura, Masaru Kuramoto, A. Atsushi Yamaguchi 283

Light Emitters Fabricated on Bulk GaN Substrates: Challenges and Achievements / Piotr Perlin, M. Leszczynski, P. Prystawko, R. Czernecki, G. Nowak, P. Wisniewski, L. Dmowski, H. Teisseyre, E. Litwin-Staszewska, T. Suski, I. Grzegory, S. Porowski, V.Yu. Ivanov, M. Godlewski, J. Holst, A. Hoffman 289

Fabrication of p-n Junction with Mg-Doped Wide Bandgap InAlGaN for Application to UV Emitters / H. Hirayama, T. Yamanaka, A. Kinoshita, K. Hiraoka, A. Hirata, Y. Aoyagi 295

Nitride Alloys and Lateral Epitaxy

Raman Studies of GaNP Alloy / I.A. Buyanova, W.M. Chen, E.M.

Goldys, H.P. Xin, C.W. Tu 303

Superior Structural Quality of Newly Developed GaN Pendeo-Epitaxial Layers / Z. Liliental-Weber, J. Jasinski, D. Cherns, M. Baines, R. Davis 309

Study of High Nitrogen Compositions GaNAs and GaInNAs Material Quality by X-ray Diffraction and Photoluminescence / T.K. Ng, S.F. Yoon, S.Z. Wang, W.K. Loke, W.J. Fan 317

Improvements of Structural and Optical Properties of GaN/Al[subscript 0.10]Ga[subscript 0.9]N Multi-Quantum Wells by Isoelectronic In-Doping / Lianshan Wang, Soo Jin Chua, Wenhong Sun 323

Infrared and Ultraviolet Raman Spectra of AIN Thin Films Grown on Si(111) / V.M. Naik, D. Haddad, Y.V. Danylyuk, R. Naik, G.W. Auner, L. Rimai, W.H. Weber, D. Uy 329

Electrical Properties of n-GaN/p-SiC and n-AlGaN/p-SiC Heterojunction Diodes / B. Luo, J. Kim, R. Mehandru, F. Ren, K.P. Lee, S.J. Pearton, A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, E.A. Kozhukhova, A.V. Osinsky, P.E. Norris 335

High Mobility Nitrides / K. Scott A. Butcher, Marie Wintrebert-Fouquet, Patrick P.-T. Chen, Trevor L. Tansley, Surapon Srikeaw 341

Compositional and Structural Studies of Amorphous GaN Grown by Ion-Assisted Deposition / U.D. Lanke, A. Koo, B.J. Ruck, H.K. Lee, A. Markwitz, V.J. Kennedy, M.J. Ariza, D.J. Jones, J. Roziere, A. Bittar, H.J. Trodahl 347

Characterization of Al[subscript x]Ga[subscript 1-x]N/Al[subscript y]Ga[subscript 1-y]N Distributed Bragg Reflectors Grown by Plasma Assisted Molecular Beam Epitaxy / H. Klausing, F. Fedler, T. Rotter, D. Mistele, O. Semchinova, J. Stemmer, J. Aderhold, J. Graul 353

Influence of Substrate Orientation on Photoluminescence in InGaN/GaN Multiple Quantum Wells / P. Chen, S.J. Chua, W. Wang 359

Photoluminescence Study of Deep-Level Defects in Undoped GaN / M.A. Reshchikov, H. Morkoc, S.S. Park, K.Y. Lee 365

Luminescent Characteristics of InGaAsP/InP Multiple Quantum Well Structures by Impurity-Free Vacancy Disordering / J. Zhao, X.D. Zhang, Z.C. Feng, J.C. Deng, P. Jin, Y.C. Wang, G. Xu 371

Influence of Growth Temperature on Emission Efficiency of InGaN/GaN Multiple Quantum Wells / Fei Chen, A.N. Cartwright, Paul M. Sweeney, M.C. Cheung, Jeffrey S. Flynn, David Keogh 377

Excitons Bound to Structural Defects in GaN / M.A. Reshchikov, D. Huang, F. Yun, H. Morkoc, R.J. Molnar, C.W. Litton 383

Nanobumps in In[subscript x]Al[subscript 1-x]N/AlN/Sapphire System: A New Kind of Quantum Dots? / Yuri Danylyuk, Dmitri Romanov, Gregory Auner 389

Optical Absorption of Nitrogen Vacancy in Proton Irradiated Al[subscript x]Ga[subscript 1-x]N Thin Films / Qiaoying Zhou, M.O. Manasreh, M. Pophristic, Ian T. Ferguson, B.D. Weaver 395

Effect of the Inter-Subband Scattering in Modulation-Doped Al[subscript x]Ga[subscript 1-x]N/GaN Heterostructures / Z.W. Zheng, B. Shen, C.P. Jiang, S.L. Guo, J. Liu, H.M. Zhou, R. Zhang, Y. Shi, Y.D. Zheng, G.Z. Zheng, J.H. Chu, T. Someya, Y. Arakawa 401

Electrical and Optical Studies of Si-Implanted GaN / James A. Fellows, Yung Kee Yeo, Robert L. Hengehold, Leonid Krasnobaev 407

Preparation of ZnAl[subscript 2]O[subscript 4]/[alpha]-Al[subscript 2]O[subscript 3] Complex Substrates and Growth of GaN Films / Z.X. Bi, R. Zhang, W.P. Li, X.S. Wang, S.L. Gu, B. Shen, Y. Shi, Z.G. Liu, Y.D. Zheng 413

Interface Roughness, Localization and Radiative Efficiency in InGaN/GaN Light Emitters / Madhusudan Singh, Jasprit Singh 419

Application of Amorphous GaN for Electroluminescence Device / Tohru Honda, Hideo Kawanishi 425

Optical Properties of Cubic AlGaN / Stephane Fanget, Catherine Bru-Chevallier, Gerard Guillot, Esteban Martinez-Guerrero, Denis Jalabert, Bruno Daudin, Henri Mariette, Le Si Dang, Gabriel Ferro, Yves Monteil 431

Electron Transport in AlN Under High Electric Fields / Ramon Collazo, Raoul Schlesser, Amy Roskowski, Robert F. Davis, Z. Sitar 437

Thermal Desorption of Deuterium From GaN(0001) / Y. Yang, J. Lee, B.D. Thoms, D.D. Koleske, R.L. Henry 443

AlGaN/GaN Based MOSHFETs With Different Gate Dielectrics and Treatments / D. Mistele, T. Rotter, Z. Bougrioua, I. Moermann, K.S. Rover, M. Seyboth, V. Schwegler, J. Stemmer, F. Fedler, H. Klausing, O.K. Semchinova, J. Aderhold, J. Graul 449

Characteristics of Deep Traps in Freestanding GaN / Z-Q. Fang, D.C. Look, P. Visconti, C. Lu, D. Wang, H. Morkoc, S.S. Park, K.Y. Lee 455

Quantum Wells

Light Emission From Quantum-Dot-Like Structures in Cubic GaN/InGaN/GaN Double Heterostructures and Quantum Wells / K. Lischka 463

Electron and Hole Cofinement in GaInN/GaN and AlGaN/GaN Quantum Wells / A. Hangleiter, S. Lahmann, C. Netzel, U. Rossow, P.R.C. Kent, A. Zunger 473

Similarities in the Optical Properties of Hexagonal and Cubic InGaN Quantum Wells / S.F. Chichibu, M. Sugiyama, T. Onuma, T. Kuroda, A. Tackeuchi, T. Sota, T. Kitamura, H. Nakanishi, Y. Ishida, H. Okumura, S. Keller, U.K. Mishra, S.P. DenBaars, S. Nakamura 481

Piezoelectric Field and Its Influence on the Pressure Behavior of the Light Emission From InGaN/GaN and GaN/AlGaN Quantum Wells / T. Suski, P. Perlin, S.P. Lepkowski, H. Teisseyre, I. Gorczyca, P. Prystawko, M. Leszczynski, N. Grandjean, J. Massies, T. Kitamura, Y. Ishida, S.F. Chichibu, H. Okumura 487

Photoluminescence of Excitons in n-Type In[subscript 0.11]Ga[subscript 0.89]N/In[subscript 0.01]Ga[subscript 0.99]N Multiple Quantum Wells / B. Monemar, P.P. Paskov, J.P. Bergman, G. Pozina, S. Kamiyama, M. Iwaya, H. Amano, I. Akasaki 501

Transport and Optical Properties

Determination and Critical Assessment of the Optical Properties of Common Substrate Materials Used in III-V Nitride Heterostructures With Vacuum Ultraviolet Spectroscopic Ellipsometry / N.V. Edwards, O.P.A. Lindquist, L.D. Madsen, S. Zollner, K. Jarrehdahl, C. Cobet, S. Peters, N. Esser, A. Konkar, D.E. Aspnes 509

Exciton Spectra of AlN Epitaxial Films / T. Onuma, S.F. Chichibu, T. Sota, K. Asai, S. Sumiya, T. Shibata, M. Tanaka 515

Intersubband Optical Absorption and Electron Relaxation Rates in GaN/AlGaN Coupled Double Quantum Wells / J.D. Heber, C. Gmachl, H.M. Ng, A.Y. Cho, S.-N.G. Chu 521

Polarization Effects in the Photoluminescence of AlGaN and AlInGaN Based Quantum Well Structures / Mee-Yi Ryu, E. Kuokstis, C.Q. Chen, J.P. Zhang, J.W. Yang, G. Simin, M. Asif Khan 527

Magneto-Spectroscopy of Two-Electron Transitions in Homoepitaxial GaN / M. Wojdak, J.M. Baranowski, A. Wysmolek, K. Pakula, R. Stepniewski, M. Potemski, I. Grzegory, S. Porowski 533

Vapor Phase Epitaxy

Characterization of High-Quality Epitaxial AlN Films Grown by MOVPE / Tomohiko Shibata, Keiichiro Asai, Teruyo Nagai, Shigeaki Sumiya, Mitsuhiro Tanaka, Osamu Oda, Hideto Miyake, Kazumasa Hiramatsu 541

Growth of AlN Bulk Crystals From the Vapor Phase / Raoul Schlesser, Rafael Dalmau, Rositza Yakimova, Zlatko Sitar 545

Crystalline and Electrical Properties of AlInN/GaN and AlN/GaN Superlattices on GaN Grown by Metalorganic Vapor Phase Epitaxy / Shigeo Yamaguchi, Yasuo Iwamura, Masayoshi Kosaki, Yasuhiro Watanabe, Shingo Mochizuki, Tetsuya Nakamura, Yohei Yukawa, Shugo Nitta, Satoshi Kamiyama, Hiroshi Amano, Isamu Akasaki 553

In Situ RHEED Observation of MOCVD-GaN Film Growth / Masatomo Sumiya, Noritaka Ogusu, Kouhei Osada, Shunro Fuke 559

Helical-Type Surface Defects in GaN and InGaN Thin Films Epitaxially Grown on GaN Templates at Reduced Temperatures / Peter Miraglia, Edward Preble, Amy Roskowski, Sven Einfeldt, Robert F. Davis, Sung Hwam Lim, Zuzzana Liliental-Weber 565

Measurement of the Effective Piezoelectric Constant of Nitride Thin Films and Heterostructures Using Scanning Force Microscopy / B.J. Rodriguez, D-J. Kim, A.I. Kingon, R.J. Nemanich 571

Measurements of the Band Offset of SiO[subscript 2] on Clean GaN / E.H. Hurt, Ted E. Cook Jr., K.M. Tracy, R.F. Davis, G. Lucovsky, R.J. Nemanich 577

Extended Defects

Theory of Electron Energy Loss Spectroscopy and Its Application to Threading Edge Dislocations in GaN / C.J. Fall, R. Jones, P.R. Briddon, A.T. Blumenau, T. Frauenheim, M.I. Heggie 585

Profiling Electric Fields Around Dislocations in GaN / D. Cherns, C.G. Jiao, H. Mokhtari 597

Optical Properties of GaN With Ga and N Polarity / M.A. Reshchikov, D. Huang, F. Yun, P. Visconti, T. King, H. Morkoc, J. Jasinski, Z. Liliental-Weber 603

High-Temperature Hardness of Bulk Single-Crystal AlN / Ichiro Yonenaga, Andrey Nikolaev, Yuriy Melnik, Vladimir Dmitriev 609

Mg Related Defect Formation During MOVPE Growth of GaN Based Films Studied by Transmission Electron Microscopy / Roland Kroger, Stephan Figge, Tim Bottcher, Peter L.

Ryder, Detlef Hommel 615

Conductivity, Photoconductivity and Optical Properties of Amorphous GaN Films / A. Koo, U.D. Lanke, B.J. Ruck, S.A. Brown, R. Reeves, I. Liem, A. Bittar, H.J. Trodahl 621

Passive Components on AlN for Application in AlGaN/GaN Power Amplifiers / B. Jacobs, B. van Straaten, M. Kramer, F. Karouta, P. De Hek, E. Suijker, R. Van Dijk 629

Production Scale Growth of AlGaN/GaN Field Effect Transistors / David Gotthold, Shawn Gibb, Boris Peres, Ian Ferguson, Chris Palmer, Eric Armour 635

Reverse-Annealing Phenomenon During the High-Temperature Implantation of Ar[superscript +] Into GaN / Igor O. Usov, Nalin R. Parikh, Darren Thomson, Robert F. Davis 641

Evaluation of (In,Ga)N Films as Optical Absorption Filters for Application in Integrated Fluorescence Detection Micro-Bioanalytical Systems / J. Alex Chediak, Michael Kneissl, Timothy D. Sands 647

Electrical Properties of GaN/InGaN MQW Heterojunction Diodes as Affected by Various Plasma Treatments / J. Kim, B. Luo, R. Mehandru, F. Ren, K.P. Lee, S.J. Pearton, A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, A.V. Osinsky, P.E. Norris 653

Electrical Properties of n-GaN/p-SiC and n-AlGaN/p-SiC Heterojunction Diodes / B. Luo, J. Kim, R. Mehandru, F. Ren, K.P. Lee, S.J. Pearton, A.Y. Polyakov, N.B. Smirnov, A.V. Govorkov, E.A. Kozhukhova, A.V. Osinsky, P.E. Norris 659

Growth of High Al Concentration AlGaN for Solar Blind Photodetector Applications / Shiping Guo, Milan Pophristic, Ian Ferguson, Boris Peres, Phil Lamarre, Steve Tobin, Kwok Wong, Marion Reine, Ashok Sood 665

High Efficiency UV-Emission at 345 nm from InAlGaN Light-Emitting Diodes / A. Kinoshita, H. Hirayama, M. Ainoya, T. Yamabi, A. Hirata, Y. Aoyagi 671

Electric Field Induced Heating and Energy Relaxation in GaN / T.A. Eckhause, O. Suzer, C. Kurdak, F. Yun, H. Morkoc 677

Current Spreading in AlGaN:Mg Cladding Layers of Laser Structures / Stephan Figge, Tim Bottcher, Christoph Zellweger, Marc Ilegems, Detlef Hommel 683

Palladium and Aluminum Gate Metals/Aluminum Nitride/Silicon Balanced Capacitors for Selective Hydrogen Sensing / H.E. Prakasam, F. Serina, C. Huang, G.W. Auner, L. Rimai, S. Ng, R. Naik 687

Effect of Ge in Cl[subscript 2] Plasma for Reactive Ion Etching of GaN / Tatsuhiro Urushido, Harumasa Yoshida, Hideto Miyake, Kazumasa Hiramatsu 693

Electrical Characterization of GaN Metal Oxide Semiconductor Diodes Using MgO as the Gate Oxide / J. Kim, B.P. Gila, R. Mehandru, J.W. Johnson, J.H. Shin, K.P. Lee, B. Luo, A. Onstine, C.R. Abernathy, S.J. Pearton, F. Ren 699

Proton Irradiation Effects on Scandium Oxide/Gallium Nitride MOS Diodes / K. Allums, B. Luo, R. Mehandru, B.P. Gila, R. Dwivedi, T.N. Fogarty, R. Wilkins, C.R. Abernathy, F. Ren, S.J. Pearton 713

Low-Resistance Electrical Contacts to p-Type GaN by Using In[subscript x]Ga[subscript 1-x]N Cap Layers / Th. Gessmann, Y.-L. Li, J.W. Graff, E.F. Schubert, J.K. Sheu 719

Fast Proton Damage Effects on the Luminescence Properties of High-Quality GaN / Qing Yang, Henning Feick, Rob Armitage, Eicke R. Weber 725

Tailorable Rectification: A Study of Vertical Transport in AlGaN/GaN Heterostructures / Madhusudan Singh, Jasprit Singh, Umesh Mishra 731

Chemical, Electrical, and Structural Properties of Au/Pd Contacts on Chemical Vapor Cleaned p-type GaN Surfaces / P.J. Hartlieb, A. Roskowski, B.J. Rodriguez, R.J. Nemanich, R.F. Davis 737

Fabrication and Investigation of the Metal-Ferroelectric-Semiconductor Structure With Pb(Zr[subscript 0.53]Ti[subscript 0.47])O[subscript 3] on Al[subscript x]Ga[subscript 1-x]N/GaN Heterostructures / B. Shen, W.P. Li, X.S. Wang, F. Yan, R. Zhang, Z.X. Bi, Y. Shi, Z.G. Liu, Y.D. Zheng, T. Someya, Y. Arakawa 743

Extraction of Polarization-Induced Charge Density in Modulation-Doped Al[subscript x]Ga[subscript 1-x]N/GaN Heterostructures Based on Schottky C-V Simulation / Y.G. Zhou, B. Shen, H.Q. Yu, J. Liu, H.M. Zhou, R. Zhang, Y. Shi, Y.D. Zheng, T. Someya, Y. Arakawa 749

TEM Assessment of GaN/AlGaN/TiAlTiAu and GaN/AlGaN/TiAlPdAu Ohmic Contacts / M.W. Fay, G. Moldovan, I. Harrison, J.C. Birbeck, B.T. Hughes, M.J. Uren, T. Martin, P.D. Brown 755

Effects of the Schottky Electrode Structure in GaN Based UV-VUV (50-360 nm) Photodetector / Atsushi Motogaito, Keiichi Ohta, Kazumasa Hiramatsu, Youichiro Ohuchi, Kazuyuki Tadatomo, Yutaka Hamamura, Kazutoshi Fukui 761

Electrical Characterization of GaN Metal Oxide Semiconductor Diode Using Sc[subscript 2]O[subscript 3] as the Gate Oxide / R. Mehandru, B.P. Gila, J. Kim, J.W. Johnson, K.P. Lee, B. Luo, A.H. Onstine, C.R. Abernathy, S.J. Pearton, F. Ren 767

Band Gap Shift of GaN Under Uniaxial Strain Compression / H.Y. Peng, M.D. McCluskey, Y.M. Gupta, M. Kneissl, N.M. Johnson 773

Electronic Devices

Novel Sensor Applications of Group-III Nitrides / M. Eickhoff, O. Ambacher, G. Steinhoff, J. Schalwig, R. Neuberger, T. Palacios, E. Monroy, F. Calle, G. Muller, M. Stutzmann 781

High Common-Emitter Current Gains Obtained by pnp GaN Bipolar Junction Transistors / Kazuhide Kumakura, Toshiki Makimoto, Naoki Kobayashi 793

Self-Heating Effects in High-Power AlGaN/GaN HFETs / M. Kuball, M.J. Uren, J.M. Hayes, T. Martin, J.C.H. Birbeck, R.S. Balmer, B.T. Hughes 799

A High-Power AlGaN/GaN Hetero Field-Effect Transistor / Seikoh Yoshida, Hirotatsu Ishii 805

Back-Doping Design in AlGaN/GaN Heterostructure Field-Effect Transistors for High-Power Applications / Narihiko Maeda, Kotaro Tsubaki, Tadashi Saitoh, Naoki Kobayashi 811

High Quantum Efficiency AlGaN/GaN Solar-Blind Photodetectors Grown by Metalorganic Chemical Vapor Deposition / U. Chowdhury, M.M. Wong, C.J. Collins, B. Yang, T.G. Zhu, A.L. Beck, J.C. Campbell, R.D. Dupuis 817

Improved Mobilities and Resistivities in Modulation-Doped P-type AlGaN/GaN Superlattices / Erik L. Waldron, John W. Graff, E. Fred Schubert, Amir M. Dabiran 823

Processing

Transparent ZnO-Based Ohmic Contact to p-GaN / E. Kaminska, A. Piotrowska, K. Golaszewska, M. Guziewicz, R. Kruszka, A. Kudla, T. Ochalski, A. Barcz, T. Dietl, F. Matsukura, M. Sawicki, A. Wawro, M. Zielinski, J. Jasinski, Z. Liliental-Weber 831

Low Resistance Non-Transparent Ohmic Pt-contacts on p-GaN / Andreas Weimar, Stefan Bader, Georg Bruderl, Volker Kummler, Alfred Lell, Volker Harle 837

X-ray Photoemission Determination of the Surface Fermi Level Motion and Pinning on n- and p-GaN During the Formation of Au, Ni, and Ti Metal Contacts / Kimberly A. Rickert, Jong Kyu Kim, Jong-Lam Lee, Franz J. Himpsel, Arthur B. Ellis, T.F. Kuech 843.

Notes:

Papers based on a symposium held November 26-30, 2001, in Boston, Massachusetts.

Includes bibliographical references and indexes.

ISBN:

155899629X

OCLC:

50235104