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Stress-induced phenomena in metallization : Sixth International Workshop on Stress-Induced Phenomena in Metallization, Ithaca, New York, 25-27 July 2001 / editors, Shefford P. Baker ... [and others].

LIBRA TK7871.85 .I5845 2001
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Format:
Book
Conference/Event
Contributor:
Baker, Shefford P.
Conference Name:
International Workshop on Stress-Induced Phenomena in Metallization (6th : 2001 : Ithaca, N.Y.)
Series:
AIP conference proceedings ; no. 612.
AIP conference proceedings, 0094-243X ; v. 612
Language:
English
Subjects (All):
Semiconductors--Defects--Congresses.
Semiconductors.
Semiconductors--Defects.
Metallic films--Congresses.
Metallic films.
Thin film devices--Defects--Congresses.
Thin film devices.
Aluminum films--Congresses.
Aluminum films.
Metallizing--Congresses.
Metallizing.
Thin film devices--Defects.
Genre:
Conference papers and proceedings.
Physical Description:
ix, 250 pages : illustrations ; 25 cm.
Place of Publication:
Melville, N.Y. : American Institute of Physics, 2002.
Contents:
Part 1 Electromigration Stresses and Mechanisms
Electromigration in the Nineties / J. R. Lloyd 3
Electromigration in Epitaxial Cu(001) Lines / G. Ramanath, H. Kim, H. S. Goindi, M. J. Frederick, C.-S. Shin, R. Goswami, I. Petrov, J. E. Greene 10
Immortality of Cu Damascene Interconnects / S. P. Hau-Riege 21
The Electromigration Short-Length Effect in AlCu and Cu Interconnects / R. G. Filippi, P.-C. Wang, R. A. Wachnik, D. Chidambarrao, M. A. Korhonen, T. M. Shaw, R. Rosenberg, T. D. Sullivan 33
A High Reliability Copper Dual-Damascene Interconnection with Direct-Contact Via Structure / K. Ueno, M. Suzuki, A. Matsumoto, K. Motoyama, N. Oda, H. Miyamoto, S. Saito 49
Statistical Study of Electromigration Early Failures in Dual-damascene Cu/oxide Interconnects / K.-D. Lee, E. T. Ogawa, H. Matsuhashi, P. S. Ho 61
A Governing Parameter for Electromigration Damage in Passivated Polycrystalline Lines and its Verification / K. Sasagawa, M. Hasegawa, M. Saka, H. Abe 74
Influence of Grain Boundary Type on Electromigration in Damascene Copper Lines / H. Wendrock, S. Menzel, T. G. Koetter, D. Rauser, K. Wetzig 86
Evaluation of Temperature Rise Due to Joule Heating and Preliminary Investigation of its Effect on Electromigration Reliability / S. Shingubara, S. Miyazaki, H. Sakaue, T. Takahagi 94
First-Principle Theoretical Study on the Dynamical Electronic Characteristics of Electromigration in the Bulk, Surface and Grain Boundary / A. Tachibana 105
Part 2 Cyclic Loading Effects
Interconnect Failure due to Cyclic Loading / R. R. Keller, R. Monig, C. A. Volkert, E. Arzt, R. Schwaiger, O. Kraft 119
Damaging of Metallization Layers by High Power Surface Acoustic Wave Fields / S. Menzel, H. Schmidt, M. Weihnacht, K. Wetzig 133
Part 3 Stress Voiding
Cohesive Zone Models of Void Nucleation at Interconnect Interfaces / A. F. Bower 145
Stress-Induced Voiding in Aluminum and Copper Interconnects / M. Hommel, A. H. Fischer, A. v. Glasow, A. E. Zitzelsberger 157
A Relationship between Film Texture and Stress-Voiding Tendency in Copper Thin Films / J. Koike, A. Sekiguchi, M. Wada, K. Maruyama 169
Stress Voiding in Wide Copper Lines / T. M. Shaw, L. Gignac, X-H. Liu, R. R. Rosenberg 177
Evaluation of Interface Strength between Thin Films in an LSI Based on Fracture Mechanics Concept / T. Shibutani, Q. Yu, M. Shiratori, T. Kitamura 184
Part 4 Deformation and Stresses
Microdiffraction and Microfluorescence Studies of Electromigration-Induced Stresses and Composition Changes / G. S. Cargill III 193
Dominant Inelastic Mechanisms in FCC Metallic Thin Films and Lines / M. J. Kobrinsky, C. V. Thompson 205
High Resolution Microdiffraction Studies Using Synchrotron Radiation / R. Spolenak, N. Tamura, B. C. Valek, A. A. MacDowell, R. S. Celestre, H. A. Padmore, W. L. Brown, T. Marieb, B. W. Batterman, J. R. Patel 217
Grain Structure Evolution During Annealing of Electroplated Copper / S. H. Brongersma, E. Kerr, I. Vervoort, K. Maex 229
Stress Induced Metallurgical Effects in Ti/TiN/AlCu/TiN Metal Stacks / K. Koller, M. Hommel, S. Hummelt, H. Koerner 235.
Notes:
Includes bibliographical references and indexes.
ISBN:
073540058X
OCLC:
49723827

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