Theory of modern electronic semiconductor devices / Kevin F. Brennan, April S. Brown.

Format:

Book

Author/Creator:

Brennan, Kevin F., 1956-

Contributor:

Brown, April S.

Anne and Joseph Trachtman Memorial Book Fund.

Language:

English

Subjects (All):

Semiconductors.

Physical Description:

xiii, 448 pages : illustrations ; 24 cm

Place of Publication:

New York : John Wiley, [2002]

Summary:

The book contains many homework exercises at the end of each chapter, and a solution manual can be obtained for instructors. Emphasizing the development of new technology, Theory of Modern Electronic Semiconductor Devices is an ideal companion to electrical and computer engineering graduate level courses and an essential reference for semiconductor device engineers.

Contents:

1 Overview of Semiconductor Device Trends 1

1.1 Moore's Law and Its Implications 1

1.2 Semiconductor Devices for Telecommunications 7

1.3 Digital Communications 11

2 Semiconductor Heterostructures 14

2.1 Formation of Heterostructures 14

2.2 Modulation Doping 20

2.3 Two-Dimensional Subband Transport at Heterointerfaces 25

2.4 Strain and Stress at Heterointerfaces 45

2.5 Perpendicular Transport in Heterostructures and Superlattices 57

2.6 Heterojunction Materials Systems: Intrinsic and Extrinsic Properties 66

3 Heterostructure Field-Effect Transistors 84

3.1 Motivation 84

3.2 Basics of Heterostructure Field-Effect Transistors 88

3.3 Simplified Long-Channel Model of a MODFET 92

3.4 Physical Features of Advanced State-of-the-Art MODFETs 104

3.5 High-Frequency Performance of MODFETs 115

3.6 Materials Properties and Structure Optimization for HFETs 123

4 Heterostructure Bipolar Transistors 130

4.1 Review of Bipolar Junction Transistors 130

4.2 Emitter-Base Heterojunction Bipolar Transistors 141

4.3 Base Transport Dynamics 152

4.4 Nonstationary Transport Effects and Breakdown 158

4.5 High-Frequency Performance of HBTs 170

4.6 Materials Properties and Structure Optimization for HBTs 183

5 Transferred Electron Effects, Negative Differential Resistance, and Devices 195

5.2 k-Space Transfer 196

5.3 Real-Space Transfer 206

5.4 Consequences of NDR in a Semiconductor 213

5.5 Transferred Electron-Effect Oscillators: Gunn Diodes 217

5.6 Negative Differential Resistance Transistors 220

5.7 IMPATT Diodes 222

6 Resonant Tunneling and Devices 234

6.1 Physics of Resonant Tunneling: Qualitative Approach 234

6.2 Physics of Resonant Tunneling: Envelope Approximation 239

6.3 Inelastic Phonon Scattering Assisted Tunneling: Hopping Conduction 249

6.4 Resonant Tunneling Diodes: High-Frequency Applications 258

6.5 Resonant Tunneling Diodes: Digital Applications 265

6.6 Resonant Tunneling Transistors 273

7 CMOS: Devices and Future Challenges 279

7.1 Why CMOS? 279

7.2 Basics of Long-Channel MOSFET Operation 288

7.3 Short-Channel Effects 297

7.4 Scaling Theory 310

7.5 Processing Limitations to Continued Miniaturization 314

8 Beyond CMOS: Future Approaches to Computing Hardware 320

8.1 Alternative MOS Device Structures: SOI, Dual-Gate FETs, and SiGe 320

8.2 Quantum-Dot Devices and Cellular Automata 325

8.3 Molecular Computing 340

8.4 Field-Programmable Gate Arrays and Defect-Tolerant Computing 354

8.5 Coulomb Blockade and Single-Electron Transistors 358

8.6 Quantum Computing 369

9 Magnetic Field Effects in Semiconductors 381

9.1 Landau Levels 381

9.2 Classical Hall Effect 392

9.3 Integer Quantum Hall Effect 398

9.4 Fractional Quantum Hall Effect 407

9.5 Shubnikov-de Haas Oscillations 413

Appendix A Physical Constants 433

Appendix B Bulk Material Parameters 435

Table I Silicon 435

Table II Ge 436

Table III GaAs 436

Table IV InP 437

Table V InAs 437

Table VI InN 438

Table VII GaN 438

Table VIII SiC 439

Table IX ZnS 439

Table X ZnSe 440

Table XI Al[subscript x]Ga[subscript 1-x]As 440

Table XII Ga[subscript 0.47]In[subscript 0.53]As 441

Table XIII Al[subscript 0.48]In[subscript 0.52]As 441

Table XIV Ga[subscript 0.5]In[subscript 0.5]P 442

Table XV Hg[subscript 0.70]Cd[subscript 0.30]Te 442

Appendix C Heterojunction Properties 443.

Notes:

"A Wiley-Interscience publication."

Includes bibliographical references (pages 419-431) and index.

Local Notes:

Acquired for the Penn Libraries with assistance from the Anne and Joseph Trachtman Memorial Book Fund.

ISBN:

0471415413

OCLC:

48752575