Microcrystalline and nanocrystalline semiconductors--2000 : symposium held November 27-30, 2000, Boston, Massachusetts, U.S.A. / editors, Philippe M. Fauchet ... [and others].

Format:

Book

Contributor:

Fauchet, Philippe Max.

Materials Research Society. Fall Meeting (2000 : Boston, Mass.)

Series:

Materials Research Society symposia proceedings ; v. 638.

Materials Research Society symposia proceedings

Language:

English

Subjects (All):

Semiconductors--Congresses.

Semiconductors.

Silicon crystals--Congresses.

Silicon crystals.

Nanostructured materials--Congresses.

Nanostructured materials.

Polycrystalline semiconductors--Congresses.

Polycrystalline semiconductors.

Genre:

Conference papers and proceedings.

Physical Description:

1 volume (various pagings) : illustrations ; 24 cm.

Place of Publication:

Warrendale, Pa. : Materials Research Society, [2001]

Contents:

Silicon Quantum Dot Devices

Silicon Single Electron Transistors With Single and Multi Dot Characteristics / Alexander Savin, Antti Manninen, Jari Kauranen, Jukka Pekola, Mika Prunnila, Jouni Ahopelto, Martin Kamp, Monika Emmerling, Alfred Forchel F1.3

Charge Storage Mechanism in Nanocrystalline Si Based Single-Electron Memories / Bruce J. Hinds, Takayuki Yamanaka, Shunri Oda F2.2

A Memory Device Utilizing Resonant Tunneling in Nanocrystalline Silicon Superlattices / Laurent Montes, Galina F. Grom, Rishi Krishnan, Philippe M. Fauchet, Leonid Tsybeskov, Bruce E. White, Jr. F2.3

Investigations of Silicon Nano-Crystal Floating Gate Memories / Arvind Kumar, Jeffrey J. Welser, Sandip Tiwari, Farhan Rana, Kevin K. Chan F2.4

Porous Silicon

Properties of Nanostructured Porous Semiconductors Studied Via Noise Spectroscopy / Vitali Parkhutik F3.1

Electrical Transport in Porous Silicon From Improved Complex Impedance Analysis / B. Remaki, S. Perichon, V. Lysenko, D. Barbier F3.2

Analyses of Ballistic Electron Transport in Nanocrystalline Porous Silicon / Akira Kojima, Xia Sheng, Nobuyoshi Koshida F3.3

Optical Photoluminescence due to the Recombination of Donor-Acceptor Pairs in Porous Silicon / J. P. Zheng, X. Wei F3.4

Electroreflectance Study of Porous Silicon Made From Substrates With Different Resistivities / Toshihiko Toyama, Yasuharu Nakai, Hiroaki Okamoto F3.5

Ballistic Electron Surface-Emitting Cold Cathode by Porous Polycrystalline Silicon Film Formed on Glass Substrate / Takuya Komoda, Tsutomu Ichihara, Yoshiaki Honda, Koichi Aizawa, Nobuyoshi Koshida F4.1

A Novel Solid-State Light-Emitting Device Based on Ballistic Electron Excitation / Y. Nakajima, A. Kojima, N. Koshida F4.2

Photonic Bandgap Effect in Periodic Porous Silicon Planar Waveguides / P. Ferrand, R. Romestain F4.4

Optical and Structural Characterization of Nanocrystalline Silicon Superlattices: Toward Nanoscale Silicon Metrology / Stefan Zollner, Atul Konkar, Ran Liu, Himansu Yapa, Patricia F. Dryer, Victoria A. Neeley, Qianghua Xie, Galina F. Grom, Quingyuan Zhu, Rishikesh Krishnan, Philippe M. Fauchet, Leonid V. Tsybeskov F5.1

CVD Growth of Si Nanocrystals on Dielectric Surfaces for Nanocrystal Floating Gate Memory Application / Sucharita Madhukar, K. Smith, R. Muralidhar, D. O'Meara, M. Sadd, B-Y. Nguyen, B. White, B. Jones F5.2

Retardation in the Oxidation Rate of Nanocrystalline Silicon Quantum Dots / J. Omachi, R. Nakamura, K. Nishiguchi, S. Oda F5.3

Atomic Force Microscopy and Raman Spectroscopy of Nanoscale Si/SiO[subscript 2] Superlattices / R. Krishnan, G.F. Grom, P.M. Fauchet, L. Tsybeskov, S. Papernov, G.I. Sproule, D.J. Lockwood F5.4

Silicon Nanoclusters in Si-SiO[subscript 2] System / F.J. Espinoza-Beltran, L.L. Diaz-Flores, J.M. Yanez-Limon, J. Morales-Hernandez, F. Rodriguez-Melgarejo, Yuri Vorobiev, J. Gonzalez-Hernandez F5.8

Fabrication and Characterization of Cold Electron Emitter Based on Nanocrystalline Silicon Dots / K. Nishiguchi, X. Zhao, S. Oda F5.9

Carrier Transport and Lateral Conductivity in Nanocrystalline Silicon Layers / H.B. Kim, L. Montes, R. Krishnan, P.M. Fauchet, L. Tsybeskov F5.12

Lateral Superlattices Fabricated With Interferometric Lithography for Nanoscale Device Applications / Christopher C. Striemer, Philippe M. Fauchet, Leonid Tsybeskov F5.13

Charging Effect in Amorphous Silicon Quantum Dots Embedded in Silicon Nitride / Nae-Man Park, Sang-Hun Jeon, Hyunsang Hwang, Suk-Ho Choi, Seong-Ju Park F5.14

Photoluminescence From Amorphous SiO[subscript 2]/Silicon/Amorphous SiO[subscript 2] Single Quantum Well Structures / Y.Q. Wang, Y. Ishikawa, N. Shibata F5.18

Photoluminescence From Nanoscale Si in a-SiO[subscript x] Matrix / I. Umezu, K. Yoshida, M. Inada, A. Sugimura F5.19

Correlation Between Bulk Morphology and Luminescence in Porous Silicon Investigated by Evaporation Induced Pore Collapse / Donald J. Sirbuly, Michael D. Mason, Steven K. Buratto F5.21

Self-Formation of Au Microwires on Au-Covered Si Electrode Surface by Electrochemical Etching in Dilute Hydrofluoric Acid Solution / Yasuo Kimura, Jun Nemoto, Atsushi Kusakabe, Yusuke Kondo, Michio Niwano F5.22

Strong Enhancement of Porous Silicon Photoluminescence by Dry Photo-Chemical Surface Treatment / S. Stolyarova, A. El-Bahar, Y. Nemirovsky F5.23

Development of Silicon-Based UV-Photodetector Prototypes Using Photoluminescent Nanocrystalline Silicon Overlayers / Carlos Navarro, Luis F. Fonseca, Guillermo Nery, O. Resto, S.Z. Weisz F5.24

Transport of Carriers in Thin Metal/PS/c-Si Device Structures Based on Porous Silicon / Leonid A. Balagurov, Sue C. Bayliss, Elena A. Petrova, Bayram Unal, Dmitrii G. Yarkin F5.26

Quantum Effects on the Dielectric Function of Porous Silicon / M. Cruz, S.F. Diaz, C. Wang, Y.G. Rubo, J. Taguena-Martinez F5.27

The Effect of Surface Roughness on Photoluminescence of Porous Silicon / Shunsuke Ogawa, Nobutomo Uehara, Masato Ohmukai, Yasuo Tsutsumi F5.28

Photoluminescence From Nano Porous Silicon Prepared by Photoelectrochemical Etching of n-Type Single Crystalline Silicon / Chi-Woo Lee, Buem-Suck Kim, Dong-Il Kim, Nam-Ki Min, Suk-In Hong F5.29

Identification of the Luminescence Center of Porous Silicon Under Low Temperature Thermal Oxidation / Kazuo Goda, Ryuji Tanaka, Yukako Honda, Kazuhisa Inoue, Hideki Ohno F5.30

Comparative SEM and Cathodoluminescence Microanalysis of Porous GaP Structures / M.A. Stevens-Kalceff, S. Langa, I.M. Tiginyanu, J. Carstensen, M. Christophersen, H. Foll F5.31

Testing of Porous Silicon Membranes as a Novel Humidity Sensor / L. Quercia, M. Della Noce, V. La Ferrara, G. Di Francia F5.32

Nanostructured TiO[subscript 2] and W:TiO[subscript 2] Thin Films by a Novel Sol-Gel Processing for Alcohol Sensing Devices / Carlotta Garzella, Elisabetta Comini, Elza Bontempi, Laura E. Depero, Cesare Frigeri, Giorgio Sberveglieri F5.39

Mo-W-O Thin Films for CO Sensing / Elisabetta Comini, Matteo Ferroni, Vincenzo Guidi, Giuliano Martinelli, Michele Sacerdoti, Gianantonio Della Mea, Alberto Vomiero, Girolamo Di Francia, Giorgio Sberveglieri F5.40

Analysis of Pt-Nanoparticles Embedded on Crystalline TiO[subscript 2] Studied by Transmission Electron Microscopy / Jordi Arbiol, Ana Ruiz, Albert Cirera, Francisca Peiro, Albert Cornet, Joan R. Morante, Abdelhadi Alimoussa, Marie-Jose Casanove F5.41

Silicon Quantum Dot Preparation

Raman Spectroscopy of Si Nanocrystals in Nanocrystalline Si Superlattices: Size, Shape and Crystallographic Orientation / G.F. Grom, P.M. Fauchet, L. Tsybeskov, J.P. McCaffrey, H.J. Labbe, D.J. Lockwood, B.E. White F6.1

Crystallization in the Limit of Ultra Thin Layers

A New Crystallization Model / Margit Zacharias, Peter Streitenberger F6.2

Oxidation of Silicon Nanocrystals / Kristen C. Scheer, Sucharita Madhukar, Ramachandran Muralidar, Jose Lozano, David O'Meara, Sandeep Bagchi, James Conner, Carlos Perez, Michael Sadd, R.E. Jones, B.E. White, Jr. F6.3

Fabrication of Silicon Nano-Crystal Dots on SiO[subscript 2] by Ultrahigh-Vacuum Chemical Vapor Deposition / Masato Oishi, Takayuki Kawashima, Supika Mashiro, Junro Sakai, Sucharita Madhukar, Bich-Yen Nguyen, Bruce E. White F6.4

The Novel Synthesis of Silicon and Germanium Nanocrystallites / Susan M. Kauzlarich, Qi Liu, Shih-Chieh Yin, Howard W.H. Lee, Boyd Taylor F6.5

Silicon Quantum Dot Devices III

Theory of Electronic Transport in Semiconductor Nanostructures / Y.M. Niquet, C. Delerue, G. Allan, M. Lannoo F7.1

Single Electron Charging Effect in Individual Si Nanocrystals / P. Gentile, T. Baron, N. Magnea, P. Mur, F. Martin, M.N. Semeria F7.4

A Novel Nanocrystal (nc) Based Non-Volatile Memory Device / Jan W. De Blauwe, Marty L. Green, Tom W. Sorsch, Garry R. Weber, Jeff D. Bude, Andi Kerber, Fred Klemens, Young Kim, Michele L. Ostraat, Richard C. Flagan, Harry A. Atwater F7.5

Porous Silicon III

Optical Applications of Macroporous Silicon / Volker Lehmann F8.1

A New Way to Form Three-Dimensional Microstructures by Electrochemical Etching of Silicon / P. Kleimann, J. Linnros, R. Juhasz F8.2

A Significant Change in Refractive Index of Nanocrystalline Porous Silicon Induced by Carrier Injection / Y. Toriumi, M. Takahashi, N.

Koshida F8.3

Size Reduction of Silicon Nanopillars by Photo-Electrochemical Etching / Robert Juhasz, Jan Linnros, Pascal Kleimann F8.5

Nanocrystalline Silicon

Photoluminescence From n-(p-) Type Impurity Doped Si Nanocrystals / Minoru Fujii, Atsushi Mimura, Shinji Hayashi, Dmitri Kovalev, Frederick Koch F9.2

Stimulated Blue Emission and Second Harmonic Generation From Films of Ultrasmall Si Nanoparticles / Munir H. Nayfeh, Joel Therrien, Gennadiy Belomoin, Osman Akcakir, Nicolas Barry, Enrico Gratton F9.5

Biology With Nanoscale Silicon

Self-Assembled Monolayers as High-Resolution Etch Masks and Templates for Organic Molecular Assembly / C.K. Harnett, A.G. Lopez, K.M. Satyalakshmi, Y.-F. Chen, H.G. Craighead F10.1

Nanoscale Silicon Microcavity Optical Sensors for Biological Applications / Selena Chan, Scott R. Horner, Benjamin L. Miller, Philippe M. Fauchet F10.4

Si Passivation and Functionalization

Thermal Functionalization of Hydrogen-Terminated Porous Silicon Surfaces With Terminal Alkenes and Aldehydes / Rabah J. Boukherroub, David J. Lockwood, Danial D.M. Wayner, Leigh T. Canham F11.4

Multiparametric Sensor for Air Pollutants Based on a Porous Silicon Optical Microcavity / Z. Gaburro, G. Faglia, C. Baratto, G. Sberveglieri, L. Pavesi F11.6

Silicon Nanowires

Pseudo-MOS Operation of Ultra-Narrow Polycrystalline Silicon Wires: Electrical Characterization and Memory Effects / C. Anghel, N. Hefyene, A.M. Ionescu, M. Declercq, J.W. Tringe, J.D. Plummer F12.4

Laser Ablation Fabricated Nano-Composite of Metal Silicide Crystallines in Silicon Wire / Jifa Qi, Yasuaki Masumoto F12.5

Alternative Si Nanostructure Synthesis

Formation of Nanostructures in Silicon by Nanosecond-Pulsed Laser Irradiation / J.D. Fowlkes, A.J. Pedraza, S. Jesse, C.M. Rouleau, D.A. Blom F13.1

Properties of Silicon Nanoparticles Produced by Picosecond Pulsed Laser Ablation / M.H. Wu, R. Mu, A. Ueda, D.O. Henderson F13.2

Growth Mechanism of Chains of Silicon Nanocrystallites / Hideo Kohno, Koji Tanaka, Seiji Takeda F13.3

Enlargement of Crystal Grain Size and Significant Inclusion of Hexagonal Diamond Phase in Ultra Pure Microcrystalline Silicon / Toshihiro Kamei F13.5

Full Color Luminescence From Amorphous Silicon Quantum Dots Embedded in Silicon Nitride / Nae-Man Park, Tae-Soo Kim, Chel-Jong Choi, Tae-Yeon Seong, Seong-Ju Park F13.6

Poster Session

Factors Affecting Ge Nanocrystal Size in Co-Sputtered Ge+SiO[subscript 2] Films / W.K. Choi, V. Ng, Y.W. Ho, T.B. Chen, V. Ho F14.1

Formation of Ge Nanocrystals Passivated With Si by Gas Evaporation of Si and Ge / Junjie Si, H. Ono, K. Uchida, S. Nozaki, H. Morisaki F14.4

Studies of Compositional Variations in Germanium Quantum Dots Grown on Silicon / Alan D.F. Dunbar, Matthew P. Halsall, Uschi Bangert, Alan Harvey, Philip Dawson, Bruce A. Joyce, Jing Zhang, Isabel Berbezier F14.5

Optical and Structural Analysis of Ge Quantum Dots Embedded in Strained Si Quantum Wells Grown on Patterned Substrates / A. Beyer, E. Muller, H. Sigg, S. Stutz, C. David, D. Grutzmacher, K. Ensslin F14.8

Si/Ge Intermixing and Island-Island Interaction in Ge/Si(100) Self-Assembled Islands / G. Capellini, M. De Seta, F. Evangelisti F14.10

Nucleation-Control and Enhancement of Solid-Phase-Crystallization of SiGe-Heterostructure / S. Yamaguchi, S.K. Park, N. Sugii F14.12

Low-Temperature Growth of Polycrystalline Film of Silicon-Rich Silicon-Germanium by Reactive Thermal Chemical Vapor Deposition / Kousaku Shimizu, Jianjun Zhang, Jeong-woo Lee, Jun-ichi Hanna F14.13

Photoluminescence and ESR Study of Si[subscript 1-x]Ge[subscript x] Alloy Nanocrystals / K. Toshikiyo, M. Tokunaga, S. Takeoka, M. Fujii, S. Hayashi F14.14

Novel Solid Nano Diamond/Pyrocarbon Semiconductor Materials / Sergey K. Gordeev, Peter I. Belobrov, Nikolay I. Kiselev, Eleonora A. Petrakovskaya, Thommy C. Ekstrom F14.16

Chemical Stability Studies of Thermally-Carbonized Porous Silicon / J. Salonen, V-P. Lehto, M. Bjorkqvist, E. Laine, L. Niinisto F14.19

Interband Transitions in Si Quantum Wires Grown in {100{ Plane / X. Zianni, A.G. Nassiopoulou F14.20

Nanocrystalline Silicon by Microwave CVD for Thin Film Transistors and Solar Cells / Young J. Song, Hak-Gyu Lee, Lihong Teng, Wayne A. Anderson F14.22

Characterization of Microcrystalline Si Films by MeV Ion Scattering Techniques / W. Bohne, J. Rohrich, B. Selle, M. Birkholz, F. Fenske, W. Fuhs, J. Platen-Schwarzkopf, P. Reinig F14.24

Exciton-Mediated Excitation of Er[superscript 3+] in Erbium-Doped Silcon Rich Silicon Oxide / Se-Young Seo, Jung H. Shin F14.26

Effects of the Substrate Temperature, Annealing Temperature, and Hydrogen Presence During Sputtering on the Luminescence of Eu-Doped Nanocrystalline Si/SiO[subscript 2] / G.A. Nery, L.F. Fonseca, H. Liu, O. Resto, S.Z. Weisz F14.27

Resonant Excitation of Er[superscript 3+] by the Energy Transfer From Si Nanocrystals / Kei Watanabe, Minoru Fujii, Shinji Hayashi F14.28

Impact of Erbium-Doped Silicon Nanocrystals on the Properties of Polyphenylene Vinylene Films / Jeffery L. Coffer, Junmin Ji F14.29

Effect of Hydrogen Treatment on High Efficiency Electroluminescence Device Using Silicon Nanocrystals / K. Sato, T. Izumi, M. Iwase, Y. Show, S. Nozaki, H. Morisaki F14.30

Pulsed Laser Induced Recrystallization of Amorphous Si / Sebastiano Tosto F14.31

Identification of Tetrahedrally Coordinated Atoms in Supercooled Liquid Silicon / Luigi Brambilla, Massimo Celino, Fabrizio Cleri, Luciano Colombo, Roberto Conversano, Mario Rosati, Vittorio Rosato F14.32

Reconciliation of the Microcrystalline and the Continuous Random Network Model for Amorphous Semiconductors / J.K. Bording, J. Tafto F14.33

Control of the Arrangement of Nano Holes on Silicon Surface / Y. Ohno, T. Ichihashi, S. Takeda F14.36

Atomically Sharp Artificially Reordered Structures in Si(100) / P. Sen, J. Akhtar F14.37

Micro-Structuring of Silicon by Pulsed-Laser Ablation Under Reactive Atmospheres / S. Jesse, A.J. Pedraza, J.D. Fowlkes, J.D. Budai, D.H. Lowndes F14.39

Fluctuation Microscopy Studies of Medium-Range Order Structures in Amorphous Tetrahedral Semiconductors / Xidong Chen, J. Murray Gibson, John Sullivan, Tom Friedmann, Paul Voyles F14.40

Diffusion Length Measurements of Minority Carriers in Si-SiO[subscript 2] Using the Photo-Grating Technique / Y. Posada, I. Balberg, L.F. Fonseca, O. Resto, S.Z. Weisz F14.44

Three-Dimensional Silicon-Based Nanostructures in Opal Matrix: Preparation and Properties / A.B. Pevtsov, V.G. Golubev, V.A. Kosobukin, D.A. Kurdyukov, A.V. Medvedev F14.45

Ge and SiGe Quantum Dots

Shock Synthesis of Nanocrystalline High-Pressure Phases in Semiconductors by High-Velocity Thermal Spray / R. Goswami, J. Parise, H. Herman, S. Sampath, R. Gambino, Y. Zhu, D. Welch F15.1

Diamond Nanocrystals

Low-Field Electron Emission Properties From Intrinsic and S-Incorporated Nanocrystalline Carbon Thin Films Grown by Hot-Filament CVD / S. Gupta, B.R. Weiner, B.L. Weiss, G. Morell, Kenyetta Johnson, Oscar O. Oritz F16.2

Rare Earths in Nanostructures

Erbium Emission From Silicon Based Photonic Bandgap Materials / Herman A. Lopez, J. Eduardo Lugo, Selena Chan, Sharon M. Weiss, Christopher C. Striemer, Philippe M. Fauchet F17.2

Er[superscript 3+] Photoluminescence Properties of Erbium-Doped Si/SiO[subscript 2] Superlattices With Sub-nm Thin Si Layers / Yong Ho Ha, Sehun Kim, Dae Won Moon, Ji-Hong Jhe, Jung H. Shin F17.3

Light-Emitting Devices

Ion Beam Synthesis Based Formation of Ge-Rich Thermally Grown Silicon Dioxide Layers: A Promising Approach for a Silicon-Based Light Emitter / T. Gebel, L. Rebohle, J. Zhao, D. Borchert, H. Frob, J.V. Borany, W. Skorupa F18.1

Silicon Nanocrystallite Light Emitting Devices Fabricated by Full Pulsed-Laser-Ablation Process / Yuka Yamada, Toshiharu Makino, Nobuyasu Suzuki, Takehito Yoshida F18.2

Stabilization of Porous Silicon Electroluminescence by Surface Capping With Silicon Dioxide Films / N. Koshida, J. Kadokura, M. Takahashi, K. Imai F18.3

Modeling Carrier Transport in Oxide-Passivated Nanocrystalline Silicon LEDs / Karl D. Hirschman, Philippe M. Fauchet F18.4

CMOS Compatible Si/SiO[subscript 2] Multilayers for Light Emitting Diodes / Z. Gaburro, L. Pavesi, G. Pucker, P. Bellutti F18.5.

Notes:

Includes bibliographical references and indexes.

ISBN:

155899548X

OCLC:

48038283