Wide bandgap semiconductors : growth, processing and applications / edited by Stephen J. Pearton.

Format:

Book

Contributor:

Pearton, S. J.

Alumni and Friends Memorial Book Fund.

Series:

Materials science and process technology series

Language:

English

Subjects (All):

Semiconductors--Design and construction.

Semiconductors.

Wide gap semiconductors.

Compound semiconductors.

Physical Description:

xx, 571 pages : illustrations ; 25 cm.

Other Title:

Processing of wide band gap semiconductors

Place of Publication:

Park Ridge, N.J. : Noyes Publications ; Norwich, N.Y. : William Andrew Pub., [2000]

Summary:

The first available textual reference to treat the manufacture and use of high temperature/high power family semiconductors, this book details the growth, processing and device applications for the wide gap semiconductor technology. Covers new applications in high temperature/high power electronics for power switching avionics and defense short wavelength emitters.

Contents:

1 Doping Limits and Bandgap Engineering in Wide Gap II-VI Compounds / Wolfgang Faschinger 1

2.0 Ab Initio Calculations of Doping Limitations 6

3.0 The Fermi Level Pinning Model 8

3.1 General Concept 8

3.2 n-Type Doping 10

3.3 Comparison to GaAs and AlGaN 15

3.4 p-Type Doping 17

3.5 Competing Doping Limitation Mechanisms 22

4.0 Doping and Band Structure Engineering 23

4.1 Surface Segregation 23

4.2 Superlattices 25

5.0 Ohmic Contact to p-ZnSe 29

2 Epitaxial Growth of II-VI Compounds by MOVPE / Wolfgang Gebhardt, Berthold Hahn 42

2.0 Binary Compounds 45

2.1 ZnTe 45

2.2 ZnSe 50

2.3 ZnS 57

2.4 ZnO 59

2.5 CdSe 60

2.6 CdS 61

3.0 Ternary and Quaternary Compounds 61

3.1 Thermodynamics of Binary Compounds 62

3.2 Thermodynamics of Ternary Compounds 63

3.3 ZnTeSe 65

3.4 ZnSSe 66

3.5 Zn[subscript x]Cd[subscript 1-x]Se 68

3.6 ZnCdS 71

3.7 ZnMgSeS 71

3 Ohmic Contacts to II-VI and III-V Compound Semiconductors / Tae-Jie Kim, Paul H. Holloway 80

1.1 Energy Barrier and Current Transport Mechanisms 82

1.2 Surface States and Fermi Level Pinning 89

2.0 Ohmic Contacts to GaAs 98

2.1 In Situ Contact Scheme 98

2.2 Ex Situ Contact Schemes 102

2.3 Reliability of and Thermally Stable Contact Metallizations 122

3.0 Ohmic Contacts to InP 126

3.1 Single Element/InP Metallizations 126

3.2 Multi-element/InP Metallizations 128

3.3 Mechanisms for Formation of Ohmic Contacts 129

4.0 Ohmic Contacts to GaN 130

5.0 Ohmic Contacts to ZnSe 134

4 Dry Etching of SiC / Joseph R. Flemish 151

2.0 Requirements of Dry Etching in SiC Device Fabrication 152

3.0 Chemistry of SiC Dry Etching 154

4.0 Methods for Plasma-Assisted Etching of SiC 156

4.1 Plasma Etching 156

4.2 Reactive Ion Etching 158

4.3 Magnetron Ion Etching of SiC 163

4.4 Electron Cyclotron Resonance Plasmas 165

5.0 Profile and Morphology Control With Ecr Etching 168

5 Processing of Silicon Carbide for Devices and Circuits / Jeffrey B. Casady 178

1.1 Historical Development of Silicon Carbide 180

1.2 Material Properties of Silicon Carbide 182

2.0 Silicon Carbide Device Processing 189

2.1 Bulk SiC Growth 190

2.2 Doping of Silicon Carbide 194

2.3 Etching of Silicon Carbide 201

2.4 Oxidation and Passivation of SiC 206

2.5 Ohmic Contacts to Silicon Carbide 212

2.6 Schottky Contacts 215

3.0 Survey of SiC Devices 218

3.1 Low Power SiC Devices 220

3.2 SiC Mesfets 221

3.3 SiC Power Devices 222

3.4 SiC Static Induction Transistor 227

4.0 SiC Circuits and Sensors 229

4.1 Operational Amplifiers 229

4.2 Digital Circuits 229

4.3 Sensors 229

6 Plasma Etching of III-V Nitrides / Randy J. Shul 250

2.0. Etch Techniques 251

2.1 Wet Chemical Etching 251

2.2 RIE Etching 254

2.3 High-Density Plasma Etching 257

2.4 Additional Plasma Etch Platforms 259

3.0 Plasma Chemistry 260

3.1 Gas Mixtures 262

3.2 Hydrogen 263

3.3 Sulfur Hexafluoride 265

3.4 Nitrogen 267

3.5 Argon 269

3.6 Additional Halogens 270

3.7 Hydrocarbons 270

4.0 Pressure 273

5.0 Ion Energy and Plasma Density 273

6.0 Temperature Dependence 276

7.0 Growth Technique 279

8.0 Etch Profile, Morphology, and Stoichiometry 280

9.0 Plasma Induced Damage 284

10.0 Plasma Etch Applications 289

7 Ion Implantation in Wide Bandgap Semiconductors / John C. Zolper 300

2.0 Implantation Isolation 301

2.1 Group III Nitrides 302

3.0 Implantation Doping 309

3.1 Carrier Ionization in Wide Bandgap Semiconductors 309

3.2 Implantation Activation Temperature 312

3.3 GaN 313

3.4 SiC 319

3.5 Diamond 322

4.0 Impurity Redistribution 325

4.1 GaN 325

4.2 SiC 331

4.3 Diamond 332

5.0 Implantation Damage: Creation and Removal 333

5.1 GaN 333

5.2 SiC 334

5.3 Diamond 338

6.0 Device Demonstrations 338

6.1 GaN 339

6.2 SiC 341

6.3 Diamond 343

8 Rare Earth Impurities in Wide Gap Semiconductors / John M. Zavada 354

2.1 Rare Earth Elements 356

2.2 Wide Gap Semiconductors 359

3.0 Incorporation of Re Atoms in Wide Gap Semiconductors 362

4.0 Re[superscript 3+] Photoluminescence 367

5.0 Electrical Activation of Re[superscript 3+] Ions 383

9 SIMS Analysis of Wide Bandgap Semiconductors / Robert G. Wilson 393

2.0 Wide Bandgap Materials Discussed Here 394

3.0 Secondary Ion Mass Spectrometry (Sims) 394

4.0 Sims Issues 395

5.0 Quantification 397

6.0 Diamond 397

7.0 SiC 405

8.0 ZnSe 410

9.0 LiNbO[subscript 3] (and LiTaO[subscript 3]) 412

9.1 Hydrogen in LiNbO[subscript 3] 413

9.2 Rare Earths in LiNbO[subscript 3] and LiTaO[subscript 3] 416

10.0 Group III-Nitrides 417

10 Hydrogen in Wide Bandgap Semiconductors / Stephen J. Pearton, Jewor W. Lee 429

2.0 Hydrogen Incorporation in Wide Bandgap Semiconductors 430

2.1 Hydrogen Plasma Exposure 430

2.2 Hydrogen Implantation 434

2.3 Survey of the Configurations of Hydrogen in Semiconductors 437

3.0 Hydrogen in GaN 445

3.1 MOCVD Growth 447

3.2 Passivation of Other Acceptor Dopants 454

3.3 Diffusion of Hydrogen in the Nitrides 459

3.4 Passivation in Ternary Nitrides 466

3.5 Hydrogen Incorporation During Processing 471

3.6 H in GaN/InGaN Device Structures 477

3.7 H in Cubic GaN 481

4.0 Hydrogen in SiC 482

4.1 Thermal Stability of Deuterium in 3C-SiC 489

4.2 Diffusion of Hydrogen in 6H-SiC 493

5.0 Diamond 494

6.0 II-VI Compounds 495

11 Diamond Deposition and Characterization / Donald R. Gilbert, Rajiv K. Singh 506

2.0 Properties 506

3.0 Fabrication 509

3.1 High Temperature, High Pressure 509

3.2 Chemical Vapor Deposition 510

4.0 Modification 521

4.1 Structural Modification 522

4.2 Electrical Modification 525

5.0 Characterization 525

5.1 Microscopy 527

5.2 Spectroscopy 528

6.0 Applications 532

6.1 Thermal Management 532

6.2 Optics 533

6.3 Electron Emission 534

6.4 Microelectronics 534.

Notes:

Includes bibliographical references and index.

Local Notes:

Acquired for the Penn Libraries with assistance from the Alumni and Friends Memorial Book Fund.

ISBN:

0815514395

OCLC:

41090848