Semiconductor devices : basic principles / Jasprit Singh.

Format:

Book

Author/Creator:

Singh, Jasprit.

Contributor:

Class of 1932 Fund.

Language:

English

Subjects (All):

Semiconductors.

Physical Description:

xxx, 537 pages : illustrations ; 25 cm

Place of Publication:

New York : Wiley, 2000.

Summary:

* A Bit of History sections, included in each chapter, explore the history of the concepts developed and provide a snapshot of the personalities involved and the challenges of the time.

Contents:

I.1 Solid state electronics in modern life xvii

I.2 Information age: the arsenal xxi

I.3 Role of this book xxv

I.4 Guidelines for instructors xxviii

1 Electrons in Solids 1

1.2 Electronic materials: failure of classical physics 3

1.3 States of matter: order and crystals 7

1.3.1 Cubic Lattices 9

1.3.2 Diamond and Zinc Blende Structures 13

1.3.3 Notation for Planes and Points in a Lattice: Miller Indices 14

1.4 Coming of the quantum age 15

1.4.1 Particles Behaving as Waves: Atomic Spectra 17

1.4.2 DeBroglie's Hypothesis 18

1.5 Schrodinger equation 20

1.5.1 Wave Amplitude 23

1.6 Important quantum problems for solid state electronics 24

1.6.1 Electrons in Free Space 24

1.6.2 Electrons in an Atom 27

1.6.3 Electrons in Crystalline Solids: Energy Bands 29

1.7 Filling of electronic states: statistics 31

1.8 Metals, semiconductors, and insulators 33

1.8.1 Fermi Levels in Metals and Semiconductors 34

2 Electrons in Semiconductors 50

2.2 Bandstructure of semiconductors 51

2.2.1 Direct and Indirect Semiconductors: Effective Mass 51

2.3 Holes in semiconductors 56

2.4 Bandstructures of some semiconductors 59

2.5 Mobile carriers: intrinsic carriers 64

2.6 Doping: donors and acceptors 71

2.7 Carriers in doped semiconductors 75

2.7.1 Extrinsic Carrier Density 76

2.7.2 Population of Impurity Levels: Carrier Freezeout 78

2.7.3 Heavily Doped Semiconductors 81

2.11 Cumulative problems: chapters 1-2 87

3 Carrier Dynamics in Semiconductors 89

3.2 Scattering in Semiconductors 90

3.3 Velocity-Electric Field Relations in Semiconductors 92

3.3.1 Low Field Response: Mobility 93

3.3.2 High Field Transport 98

3.4 Very High Field Transport: Breakdown Phenomena 100

3.4.1 Impact Ionization or Avalanche Breakdown 100

3.4.2 Band-to-Band Tunneling: Zener Tunneling 102

3.5 Carrier transport by Diffusion 104

3.6 Transport by Drift and Diffusion: Einstein's Relation 106

3.7 Charge Injection and Quasi-Fermi Levels 109

3.7.1 Quasi-Fermi Levels 110

3.8 Carrier Generation and Recombination 113

3.8.1 Optical Processes in Semiconductors 114

3.8.2 Nonradiative Recombination 118

3.9 Continuity Equation: Diffusion Length 120

4 Processing of Devices: A Review 136

4.2 Semiconductor Crystal Growth 137

4.2.1 Bulk Crystal Growth 137

4.2.2 Epitaxial Crystal Growth 139

4.3 Lithography 142

4.3.1 Photoresist Coating 142

4.3.2 Mask Generation and Image Transfer 144

4.4 Doping of Semiconductors 145

4.4.1 Epitaxial Doping 145

4.4.2 Doping by Diffusion 146

4.4.3 Ion Implantation 146

4.5 Etching 147

4.5.1 Wet Chemical Etching 148

4.5.2 Plasma Etching 150

4.5.3 Reactive Ion Beam Etching (RIBE) 150

4.5.4 Ion Beam Milling 151

4.6 Putting it all Together 151

5 Junctions in Semiconductors: P-N Diodes 156

5.1 Device Demands 157

5.1.1 Need for Junctions 158

5.2 Unbiased P-N Junction 159

5.3 P-N Junction Under Bias 170

5.3.1 Charge Injection and Current Flow 174

5.3.2 Minority and Majority Currents 177

5.3.3 The Case of a Narrow Diode 184

5.4 Real Diode: Consequences of Defects 185

5.5 High-Voltage Effects in Diodes 190

5.5.1 Forward Bias: High Injection Region 191

5.5.2 Reverse Bias: Impact Ionization 191

5.5.3 Reverse Bias: Zener Breakdown 192

5.6 Modulation and Switching: Ac Response 195

5.6.1 Small-Signal Equivalent Circuit of a Diode 197

5.6.2 Large-Signal Switching of Diodes 202

5.7 Spice Model for a Diode 207

5.11 Design Problems 218

6 Semiconductor Junctions with Metals and Insulators 223

6.1 Metals as Conductors: Interconnects 224

6.2 Schottky Barrier Diode 227

6.2.1 Schottky Barrier Height 227

6.2.2 Capacitance Voltage Characteristics 228

6.2.3 Current Flow in a Schottky Barrier 233

6.2.4 Small-Signal Circuit of a Schottky Diode 238

6.2.5 Comparison of Schottky and p-n Diodes 240

6.3 Ohmic Contacts 240

6.4 Insulator-Semiconductor Junctions 244

6.4.1 Silicon Dioxide-Silicon 245

6.4.2 Silicon Nitride-Silicon 247

6.4.3 Polycrystalline Silicon-Silicon 248

6.5 Technology Roadmap 249

7 Bipolar Junction Transistors 257

7.2 Bipolar Transistor: a Conceptual Picture 260

7.3 Static Characteristics of Bipolar Transistors 264

7.3.1 Biasing of the BJT 266

7.3.2 Current Flow in a BJT 267

7.3.3 Operating Configuration of a BJT 272

7.3.4 The Ebers-Moll Model 273

7.4 BJT Static Performance Parameters 276

7.4.1 Emitter Injection Efficiency, [gamma subscript e] 276

7.4.2 Base Transport Factor, B 277

7.4.3 Collector Efficiency, [gamma subscript c] 277

7.4.4 Current Gain 278

7.5 Secondary Effects in Real Devices 282

7.5.1 Base Width Modulation: Early Effect and Punchthrough 282

7.5.2 Drift Effects in the Base: Nonuniform Doping 284

7.5.3 Avalanche Breakdown 284

7.5.4 High Injection: Thermal Effects 284

7.5.5 High Injection: Base Pushout Effect 285

7.5.6 Low Injection Effects and Current Gain 287

7.5.7 Current Crowding Effect 287

7.6 A Charge-Control Analysis 293

7.6.1 Junction Voltages at Saturation 298

7.7 Bipolar Transistor as an Inverter 299

7.7.1 Schottky Transistor for Faster Switching 305

7.8 High-Frequency Behavior of BJT 307

7.9 Spice Model for a Bipolar Transistor 311

7.10 BJT Design Limitations: Need for Bandtailoring & Hbts 313

7.11 Bipolar transistors: A technology roadmap 320

7.11.1 Si Bipolar Technology 320

7.11.2 Si-Based HBTs 322

7.11.3 GaAs/AlGaAs HBTs 322

7.11.4 InGaAs/InAlAs and InGaAs/InP HBTs 323

7.15 Design problems 332

8 Field Effect Transistors: JFET/MESFET 335

8.2 JFET and MESFET 338

8.3 Current-voltage characteristics 343

8.3.1 Saturation Regime 349

8.4 Effects in real devices 352

8.4.1 Velocity-Field Relations in Real Devices 352

8.4.2 Channel Length Modulation 353

8.5 High-frequency, high-speed issues 355

8.5.1 Small-Signal Characteristics 355

8.5.2 Large-Signal Analog Applications 359

8.8 Design problems 368

9 Field Effect Transistors: MOSFET 370

9.2 MOSFET: structure and fabrication 371

9.2.1 NMOS Fabrication 373

9.2.2 CMOS Technology 374

9.3 Metal-oxide-semiconductor capacitor 374

9.4 Capacitance-voltage characteristics of the mos structure 387

9.5 Metal-oxide-semiconductor field-effect transistor 393

9.5.1 Current-Voltage Characteristics 395

9.5.2 Substrate Bias Effects 399

9.5.3 Depletion and Enhancement MOSFETs 403

9.5.4 Complementary MOSFETs 404

9.6 Important issues in real mosfets 407

9.6.1 Important Effects in Long-Channel MOSFETs 407

9.6.2 Important Effects in Short-Channel MOSFETs 411

9.6.3 Parasitic Bipolar Transistors and Latch-up in CMOS 412

9.10 Conceptual/design problems 420

10 MOSFET: Technology Driver 422

10.2 MOSFET in the digital world 424

10.2.1 MOSFET as a Load 425

10.2.2 MOSFET as an Inverter 426

10.2.3 NMOS Logic Gates 428

10.2.4 CMOS Inverter 430

10.2.5 CMOS Logic Gates 431

10.3 MOSFET as an amplifier 435

10.4 From device physics to circuit simulators 441

10.5 MOSFET technology roadmap 443

10.5.1 Scaling of MOS Circuits 446

10.5.2 Challenges Ahead 448

11 Semiconductor Optoelectronics 454

11.2 Optical absorption in a semiconductor 458

11.3 Photocurrent in a P-N diode 463

11.3.1 Application to a Solar Cell 465

11.4 P-I-N photodetector 470

11.5 Light emission: light-emitting diode 472

11.5.1 Carrier Injection and Spontaneous Emission 474

11.6 Semiconductor laser: basic principles 482

11.6.1 Spontaneous and Stimulated Emission: The Need for an Optical Cavity 482

11.6.2 The Laser Structure: Optical Cavity 484

11.6.3 Optical Absorption, Loss, and Gain 486

11.6.4 The Laser Below and Above Threshold 489

B.1 Density of states 509

B.2 Tunneling through barriers 514

C Properties

of Semiconductors 518

D From Device Physics to Circuit Modeling 524

D.1 SPICE parameters for a P-N diode 525

D.2 SPICE parameters for a CMOS 527.

Notes:

Includes bibliographical references and index.

Local Notes:

Acquired for the Penn Libraries with assistance from the Class of 1932 Fund.

ISBN:

047136245X

OCLC:

43791048