Infrared characterization for microelectronics / W.S. Lau.

Format:

Book

Author/Creator:

Lau, W. S.

Language:

English

Subjects (All):

Microelectronics--Materials--Testing.

Microelectronics.

Infrared spectroscopy.

Absorption spectra.

Physical Description:

x, 160 pages : illustrations ; 23 cm

Place of Publication:

Singapore ; River Edge, N.J. : World Scientific, [1999]

Summary:

Explains the application of infrared absorption spectroscopy to silicon, gallium arsenide, and various dielectric thin films involved in microelectronics processing. Early chapters discuss principles and instrumentation involved, then examine infrared transmitting properties of silicon substrates. Later chapters detail measurement of oxygen and carbon and other impurities in silicon, measurement of epitaxial layer thickness, and characterization of thin films, glasses, and amorphous silicon and related materials. A final chapter looks at applications to microelectronics. Lau is affiliated with Chartered Semiconductor Manufacturing Ltd., Singapore. Annotation copyrighted by Book News, Inc., Portland, OR

Contents:

1.1 Vibrational spectroscopy 1

1.2 Infrared spectroscopy and Raman spectroscopy 2

1.3 Limitations of selection rules 3

1.4 Overtones and combinations 3

1.5 Conventional instrumentation for infrared spectroscopy 4

1.6 Fourier Transform Infrared (FTIR) Spectrometer 4

1.7 Advantages of FTIR over conventional DIR 5

1.8 Definitions of common terms in infrared spectroscopy 6

1.9 Elementary methods of quantitative analysis for infrared spectroscopy 7

1.10 Reflectance infrared measurement 7

1.11 Attenuated total reflection (ATR) infrared measurement 9

1.12 Reflection absorption infrared measurement 11

Chapter 2 The Properties of Infrared Transparent Substrates 15

2.1 The significance of substrates in infrared spectroscopy 15

2.2 Different types of infrared transparent substrates 15

2.3 Factors that affect the infrared transparency of silicon 16

2.4 Recommendations to reduce substrate effects 22

Chapter 3 The Measurement of Oxygen and Carbon and Other Impurities in Silicon 25

3.2 Oxygen in silicon wafers 25

3.3 Carbon in silicon wafers 26

3.4 The measurement of interstitial oxygen in silicon 27

3.5 The measurement of substitutional carbon in silicon 28

3.6 The determination of the absorption coefficient [alpha] for oxygen and carbon in silicon 28

3.7 Limitations of the infrared method 30

3.8 The infrared characterization of oxygen precipitates and thermal donors 31

3.9 Carbon-oxygen complexes in silicon 32

3.10 Nitrogen in silicon 35

3.11 Shallow impurities in silicon 36

3.12 Hydrogen in silicon 36

3.13 The application of infrared spectroscopy to polysilicon 38

3.14 Carbon and oxygen in gallium arsenide 41

Chapter 4 The Measurement of Epitaxial Layer Thickness 45

4.2 Optical interference in epitaxial layers 47

4.3 Algorithm to measure the thickness of silicon epitaxial layers for a dispersive infrared spectrometer 47

4.4 Measurement of epitaxial layer thickness by a reflectance FTIR spectrometer 48

4.5 Emission FTIR for insitu measurement of epilayer thicker during the epitaxy process 50

Chapter 5 The Characterization of Silicon Dioxide and Silicon Nitride Thin Films 55

5.2 The application of infrared spectroscopy to silicon dioxide films 56

5.2.1 Silicon dioxide films grown by thermal oxidation 56

5.2.2 Nitrided silicon dioxide films 61

5.2.3 PECVD silicon dioxide films 63

5.2.4 Silicon dioxide films deposited by the O[subscript 3]/TEOS CVD technique 65

5.2.5 Fluorine-doped silicon dioxide films 66

5.3 The application of infrared spectroscopy to silicon nitride films 72

5.3.1 Hydrogen in PECVD silicon nitride 72

5.3.2 The application of infrared spectroscopy to silicon-rich and nitrogen-rich PECVD silicon nitride 76

5.3.3 The application of infrared spectroscopy to ECR PECVD silicon nitride films 77

5.3.4 CVD silicon nitride 78

5.4 The application of infrared spectroscopy to silicon oxynitride films 80

Chapter 6 The Characterization of PSG, BPSG, SOG and Other Glasses 87

6.2 Phosphorus content in PSG 88

6.3 Boron content and phosphorus content in BPSG 90

6.4 Stabilization of PSG and BPSG by annealing 94

6.5 The detection of moisture penetration through silicon oxynitride passivation by infrared spectroscopy on PSG below passivation 94

6.6 The application of infrared spectroscopy to spin-on-glass (SOG) 97

6.7 The application of infrared spectroscopy to other glasses used in microelectronics 101

Chapter 7 The Characterization of Amorphous Silicon and Related Materials 105

7.2 Hydrogen content and bonding in hydrogenated amorphous silicon 106

7.3 The application of infrared spectroscopy to hydrogenated amorphous silicon-germanium 109

7.4 The application of infrared spectroscopy to hydrogenated amorphous silicon-carbide 112

7.5 The application of infrared spectroscopy to diamond like carbon films 115

7.6 Diamond films 118

7.7 Boron nitride films 118

7.8 Porous silicon films 120

7.9 Microcrystalline silicon and related materials 121

Chapter 8 Miscellaneous Applications of Infrared Spectroscopy to Microelectronics 125

8.2 The application of infrared spectroscopy to polyimides 125

8.3 The application of infrared spectroscopy to silicon-on-insulator (SOI) and bonded silicon wafers 127

8.3.1 Simox 128

8.3.2 The bonding of Si wafers 129

8.4 The application of infrared spectroscopy to study the surface physics of silicon 130

8.5 The application of infrared spectroscopy to study the cleaning of silicon 133

8.6 The measurement of carbon, oxygen and other impurities in gallium arsenide 133

8.7 The measurement of EL2 in semi-insulating gallium arsenide 138

8.8 Hydrogen passivation in III-V semiconductors 141

8.9 Hydrogen passivation in II-VI semiconductors 143

8.10 Detection of crystalline defects by infrared light scattering tomography 145

8.11 The application of infrared spectroscopy to microelectronics processing 149.

Notes:

Includes bibliographical references and index.

ISBN:

9810223528

OCLC:

42296475