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SiGe, GaAs, and InP heterojunction biopolar transistors / Jiann S. Yuan.

LIBRA TK7871.96 .B55 Y83 1999
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Format:
Book
Author/Creator:
Yuan, J. S.
Contributor:
Class of 1932 Fund.
Series:
Wiley series in microwave and optical engineering
Language:
English
Subjects (All):
Bipolar transistors.
Junction transistors.
Physical Description:
xvii, 463 pages : illustrations ; 25 cm.
Place of Publication:
New York : Wiley, [1999]
Summary:
This immensely useful guide to a rapidly expanding field includes more than 200 figures, tables of different material systems in terms of their physical parameters, and up-to-date experimental results culled from the latest research. An essential resource for circuit and device designers in the semiconductor industry, SiGe, GaAs, and InP Heterojunction Bipolar Transistors is also useful for graduate students in electrical engineering, applied physics, and materials science.
Notes:
Includes bibliographical references and index.
Local Notes:
Acquired for the Penn Libraries with assistance from the Class of 1932 Fund.
ISBN:
0471197467
OCLC:
39614803

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