Positron annihilation in semiconductors : defect studies / R. Krause-Rehberg, H.S. Leipner.

Format:

Book

Author/Creator:

Krause-Rehberg, R. (Reinhard), 1955-

Contributor:

Leipner, Hartmut S., 1958-

Series:

Springer series in solid-state sciences 0171-1873 ; 127.

Springer series in solid-state sciences, 0171-1873 ; 127

Language:

English

Subjects (All):

Semiconductors--Defects.

Semiconductors.

Positron annihilation.

Physical Description:

xv, 378 pages : illustrations ; 24 cm.

Place of Publication:

Berlin ; New York : Springer, [1999]

Summary:

The subject of this book is the investigation of lattice imperfections in semiconductors by means of positron annihilation. A comprehensive review is given of the different positron techniques, whose application to various kinds of defects, e.g. vacancies, impurity-vacancy complexes and dislocations, is described. The sensitivity range of positron annihilation with respect to the detection of these defects is compared to that of other defect-sensitive methods. The most prominent results obtained with positrons in practically all important semiconductors are reviewed. A special chapter of the book deals with positron annihilation as a promising tool for many technological purposes. The theoretical background necessary to understand the experimental results is explained in detail.

Notes:

Includes bibliographical references (pages [353]-374) and index.

ISBN:

3540643710

OCLC:

40545397