Hot-carrier effects in MOS devices / Eiji Takeda, Cary Y. Yang, Akemi Miura-Hamada.

Format:

Book

Author/Creator:

Takeda, Eiji, 1944-

Contributor:

Yang, C. Y.-W. (Cary Y.-W.), 1948-

Miura-Hamada, Akemi.

Language:

English

Subjects (All):

Metal oxide semiconductors.

Hot carriers.

Physical Description:

xii, 312 pages : illustrations ; 24 cm

Place of Publication:

San Diego : Academic Press, 1995.

Summary:

The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world. This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers. Key Features* Chapter one itself is a comprehensive review of MOS device physics which allows a reader with little background in MOS devices to pick up a sufficient amount of information to be able to follow the rest of the book* The book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the field* The logical organization of the book begins by discussing known principles, then progresses to empirical information and, finally, to practical solutions* Provides the most complete review of device degradation mechanisms as well as drain engineering methods* Contains the most extensive reference list on the subject

Contents:

Chapter 1 MOS Device Fundamentals

1.1 From Discrete to ULSI 1

1.2 Physics of the MOS Diode 2

1.2.1 The Ideal MOS Diode 3

1.2.1.1 Energy Band Diagrams 3

1.2.1.2 Solution with the Depletion Approximation 5

1.2.1.3 Capacitance-Voltage Characteristics 8

1.2.1.4 General Solution 11

1.2.2 Nonideal Considerations 15

1.2.2.1 Voltage-Independent Flat-Band Shifts 15

1.2.2.2 Interface Trapped Charge 17

1.2.2.3 Nonuniform Substrate Doping 22

1.3 Principles of the MOSFET 23

1.3.1 Qualitative Description of MOSFET Operation 23

1.3.2 Bulk Charge Model 26

1.3.2.1 The Square Law 28

1.3.2.2 Threshold Voltage 29

1.3.2.3 Transconductance 30

1.3.3 Threshold Voltage Determination 31

1.3.4 Subthreshold Conduction 32

1.3.5 Short-Channel Effects 34

1.3.5.1 Mobility Degradation 35

1.3.5.2 Carrier Velocity Saturation 37

1.4 Survey of Device and Circuit Reliability Issues Related to Hot-Carrier Effects 40

Chapter 2 Hot-Carrier Injection Mechanisms

2.2 Avalanche Breakdown 44

2.2.1 Avalanche Multiplication 45

2.2.2 Normal Breakdown 47

2.2.3 Negative-Resistance Breakdown 48

2.3 Hot-Carrier Injection Mechanisms and Gate Currents 49

2.3.1 Channel Hot-Electron (CHE) Injection 49

2.3.2 Drain Avalanche Hot-Carrier (DAHC) Injection 51

2.3.3 Secondarily Generated Hot-Electron (SGHE) Injection 51

2.3.4 Substrate Hot-Electron (SHE) Injection 57

2.3.5 Fowler-Nordheim (F-N) Tunnel Injection 57

2.3.6 Direct Tunnel Injection 58

2.4 Gate Current Modeling 58

2.4.1 Gate Current Resulting from CHE Injection (Effective Electron Temperature Model) 58

2.4.2 Gate Current Resulting from DAHC Injection 60

2.4.3 Effective Electron Temperature vs Lucky-Electron Model 65

Chapter 3 Hot-Carrier Device Degradation

3.2 Device Degradation Due to Various Hot-Carrier Injections 67

3.2.1 Interface Trap Density (N[subscript it]) vs Degraded Length ([delta]L) 68

3.2.2 [Delta]G[subscript m]/G[subscript m0] vs [Delta]N[subscript it]/N[subscript it] Relation 70

3.2.3 Role of Hot Holes 73

3.2.4 DAHC vs CHE Injections 76

3.2.5 SGHE vs DAHC Injections 78

3.3 Modeling of Device Degradation 80

3.3.1 Substrate Current Modeling 80

3.3.2 Device Degradation Modeling

Hot-Carrier Lifetime 81

3.3.3 The Si-SiO[subscript 2] Interface Degradation 88

Chapter 4 AC and Process-Induced Hot-Carrier Effects

4.2 Dynamic (AC) Stress Effects 91

4.2.1 Gate Pulse-Induced Noises 92

4.2.2 AC Hot-Carrier Degradation Due to Noises 92

4.2.3 AC Hot-Carrier Effects without Noises 97

4.2.4 Device Structure Dependence of AC Hot-Carrier Effects 98

4.2.5 Initial Stage Degradation 103

4.3 Process Effects on Hot-Carrier Degradation 106

4.3.1 Gate Oxide Degradation Due to Electron-Beam Direct Writing 108

4.3.2 Isolation Effects on Hot-Carrier Degradation 110

4.4 Materials Effects on Hot-Carrier Degradation 110

4.4.1 Mechanical Stress Effect 113

4.4.2 High-Quality Gate Dielectrics 120

Chapter 5 Hot-Carrier Effects at Low Temperature and Low Voltage

5.2 Hot-Carrier Effects at Low Temperature 123

5.3 Device Performance Degradation 123

5.3.1 G[subscript m] Degradation 123

5.3.2 V[subscript th] Shift 127

5.4 Device Degradation Mechanisms 130

Chapter 6 Dependence of Hot-Carrier Phenomena on Device Structure

6.2 Variations of Device Structure 135

6.3 Device Parameter Dependence 135

6.3.1 Effective Channel Length 135

6.3.2 Channel Dose 135

6.3.3 Gate Oxide Thickness 137

6.3.4 Gate to Drain-Source Overlapped Length 138

6.4 Device Structure Dependence 140

6.4.1 Drain Structures 140

6.4.2 Hot-Carrier-Resistant Characteristics (I[subscript SUB], I[subscript G]) 142

Chapter 7 As-P Double Diffused Drain (DDD) Versus Lightly Doped Drain (LDD) Devices

7.2 DDD Structure and Its Fabrication Process 149

7.3 DDD Device Characteristics 150

7.3.1 I[subscript D]-V[subscript D] Characteristics 150

7.3.2 Drain Sustaining Voltage (BV[subscript DS]) 153

7.3.3 Short-Channel Effects

V[subscript th] Lowering 153

7.3.4 Tail Coefficient and V[subscript th] Scattering 154

7.3.5 Hot-Carrier Breakdown Voltage or Highest Applicable Voltage (BV[subscript DC]) 157

7.4 DDD and LDD Device Operation Principles 159

7.5 LDD Device Characteristics 161

7.5.1 Device Characteristics Specific to LDD Devices 161

7.5.2 Reduced Switchback Action Due to Source n[superscript -] Resistance 162

7.6 Improved LDD Devices 165

7.7 Gaussian vs Abrupt Junctions 166

7.7.1 V[subscript th] Lowering 166

7.7.2 G[subscript m] vs x[subscript j] Relation 168

Chapter 8 Gate-to-Drain Overlapped Devices (GOLD)

8.2 GOLD Structure and Its Fabrication Process 176

8.3 Device Characteristics 177

8.3.1 G[subscript m] Improvement 177

8.3.2 Suppressed Avalanche-Induced Breakdown 178.

Notes:

Includes bibliographical references (pages 187-301) and index.

ISBN:

0126822409

OCLC:

32738829