Advanced semiconductor device physics and modeling / Juin J. Liou.

Format:

Book

Author/Creator:

Liou, Juin J.

Series:

Artech House materials science library

Language:

English

Subjects (All):

Semiconductors.

Physical Description:

xvii, 498 pages : illustrations ; 23 cm.

Place of Publication:

Boston : Artech House, [1994]

Summary:

This reference provides detailed information which enables you to quickly understand the physics and modeling of mainstream devices. Packed with nearly 1,000 equations and 396 illustrations.

Contents:

Chapter 1 Semiconductor Device Fundamentals 1

1.1 Energy Band Theory 1

1.1.1 Wave-Particle Duality 1

1.1.2 Schrodinger Time-Dependent and Time-Independent Wave Equations 3

1.1.3 Solutions of the Schrodinger Time-Independent Wave Equation 5

1.1.4 Energy Band Theory of Free Carriers 10

1.1.5 Effective Mass Concept 14

1.2 Statistics of Free Carriers in Semiconductors 16

1.2.1 Fermi-Dirac Statistics 16

1.2.2 Maxwell-Boltzmann Statistics 17

1.2.3 Free-Carrier Concentration in Semiconductors 18

1.2.4 Temperature Effect on Free Carrier Concentration 21

1.3 Generation and Recombination Processes 26

1.3.1 Band-to-Band Recombination 27

1.3.2 Auger Recombination 28

1.3.3 Shockley-Read-Hall Recombination 29

1.3.4 Surface Recombination 31

1.4 Boltzmann Transport Equation 31

1.5 Drift and Diffusion Mechanisms 32

1.6 Carrier Scattering Mechanisms 35

1.7 Basic Semiconductor Device Equations 39

1.8 Monte Carlo Simulation 41

Chapter 2 Physics and Models Related to p/n Junctions 53

2.1 Description of p/n Junction 53

2.2 Ambipolar Transport Equation 57

2.3 Linvill Lumped Circuit Model 62

2.4 Sah Transmission-Line Circuit Model 66

2.5 Current and Avalanche Breakdown in Reverse Biased p/n Junctions 68

2.5.1 Current in Reverse-Biased Junctions 68

2.5.2 Avalanche Breakdown in Reverse-Biased Junctions 72

2.6 Tunneling Currents in p/n Junctions 76

2.6.1 Reverse-Biased Tunneling Current 76

2.6.2 Forward-Biased Tunneling Current 82

2.7 Charge Storage in p/n Junctions 84

2.7.1 Capacitances p/n Junctions 84

2.7.2 Transient Behavior of p/n Junctions 88

2.8 Abrupt Heterojunction Diodes 94

2.8.1 Heterojunction Properties 95

2.8.2 Energy Band Discontinuities 97

2.9 Abrupt Heterojunctions with Setback Layer 101

2.10 Graded Heterojunctions 105

Chapter 3 Bipolar Junction Transistors 119

3.1 Steady-State Characteristics under Forward-Active Operation 123

3.2 Current-Voltage Characteristics Including Saturation and Current-Induced Base Pushout 125

3.2.1 Base Pushout in Active Mode 129

3.2.2 Base Pushout in Saturation Mode 130

3.3 Effect of Quasi-Neutral Base Width Modulation (Early Effect) 138

3.4 Effect of Nonuniform Doping Concentration 138

3.4.1 Collector Current 139

3.4.2 Base Current 141

3.5 Avalanche Multiplication in BJTs 142

3.6 Charge Storage in BJTs 145

3.6.1 Junction Capacitances 145

3.6.2 Diffusion Capacitances 154

3.7 Multi-Dimensional Effects 156

3.8 Polyemitter Bipolar Transistors 161

3.9 Switching Speed of BJTs 167

3.10 Large- and Small-Signal Models 173

Chapter 4 Junction Field-Effect Transistors 185

4.1 General Theory 185

4.2 Current-Voltage Characteristics of Three-Terminal JFETs 189

4.2.1 Saturation Current I[subscript SDS] 189

4.2.2 Channel-Length Modulation Coefficient [lambda] 194

4.2.3 Modeling the Merging Parameter 197

4.3 Current-Voltage Characteristics of Four-Terminal JEFTs 198

4.3.1 Modeling the Merging Parameter and Channel-Length Modulation 203

4.3.2 Saturation Current I[subscript SDS] 203

4.3.3 Discussion 204

4.4 Short-Channel JFETs 207

4.4.1 Simulation Results 210

4.5 Large- and Small-Channel Models 223

Chapter 5 Metal-Oxide-Semiconductor Field-Effect Devices 227

5.1 Metal-Oxide-Semiconductor Diodes 228

5.1.1 Surface Potential and Electric Field 232

5.1.2 MOS Capacitance 235

5.1.3 Threshold Voltage of MOS Diode 239

5.1.4 Threshold Voltage Including Flatband Voltage 241

5.1.5 Threshold Voltage Including Body Effect 241

5.2 Metal-Oxide-Semiconductor Field-Effect Transistor 242

5.2.1 Threshold Voltage of MOSFET 242

5.2.2 Current-Voltage Characteristics 243

5.2.3 Short-Channel Effect 255

5.2.4 Narrow-Channel Effect 258

5.2.5 The Effects of Short and Narrow Channels on Drain Current 260

5.2.6 Scaling Rule for MOSFET Miniaturization 265

5.2.7 Effects of Nonuniform Doping Profile on I-IV Characteristics 266

5.3 Numerical and Experimental Results 268

5.4 Hot-Carrier Effects 273

5.5 Capacitances of Intrinsic MOSFET 278

5.6 MOSFET Equivalent Circuit 282

Chapter 6 Metal-Semiconductor Junction Devices 289

6.1 Schottky Diode 289

6.1.1 Basic Concept 289

6.1.2 Barrier Lowering Effect 296

6.1.3 Current-Voltage Characteristics 298

6.2 Ohmic Contact 300

6.3 Metal-Semiconductor Field-Effect Transistor 300

6.3.1 Simple MESFET Model 304

6.3.2 Improved Model for Submicron MESFETs 306

6.3.3 Two-Dimensional Analysis 318

6.3.4 Large- and Small-Signal Models 325

Chapter 7 Heterojunction Bipolar and Field-Effect Transistors 333

7.1 Single Heterojunction Bipolar Transistors 333

7.1.1 Collector Current of Abrupt HBTs 337

7.1.2 Base Current of Abrupt HBTs 340

7.1.3 Base Grading 348

7.1.4 Charge Storage in HBTs 353

7.1.5 Cutoff Frequency of HBTs 357

7.2 Abrupt HBTs with a Setback Layer 364

7.2.1 Collector Current 365

7.2.2 Base Current 366

7.2.3 Results 366

7.3 HBTs with a Graded Junction 371

7.3.1 Collector Current 373

7.3.2 Base Current 373

7.3.3 Results 375

7.4 Base and Collector Leakage Currents 380

7.4.1 Leakage Current at Emitter-Base Periphery 381

7.4.2 Leakage Current at Base-Collector Periphery 382

7.4.3 Total Base and Collector Currents 382

7.5 Double Heterojunction Bipolar Transistors 385

7.5.1 Base-Collector Junction Capacitance 386

7.5.2 Offset Voltage of Single and Double HBTs 390

7.6 Heterojunction Field-Effect Transistors 393

7.6.1 Two-Dimensional Electron Gas at AlGaAs/GaAs Interface 359

7.6.2 Two-Dimensional Electron Gas Mobility and Velocity 397

7.6.3 Current-Voltage Characteristics of HFETs 398

Chapter 8 Solar Cells 407

8.1 Basic Concept 408

8.1.1 Air Mass and Spectral Response 408

8.1.2 Short-Circuit Current and Open-Circuit Voltage 412

8.1.3 Fill Factor and Conversion Efficiency 414

8.2 Homojunction Solar Cells 415

8.2.1 Short-Circuit Current for Si and GaAs Cells 416

8.2.2 Open-Circuit Voltage for Si and GaAs Cells 421

8.2.3 Optimization and Comparison of Si and GaAs Cells 423

8.3 Heterojunction Solar Cells 428

8.3.1 Short-Circuit Current and Open-Circuit Voltage 428

8.3.2 Results and Optimization 430

8.4 Effect of V-Groove Front Surface on Solar Cell Performance 437

8.4.1 Fixed Cell Orientation 440

8.4.2 Cells on Sun Tracking Structure 447

Chapter 9 Photoconductive Diodes 457

9.1 Device Structure and Characteristics 457

9.2 General Theories 462

9.3 Conductivity and Current 463

9.3.1 Dark (Light-Off) State 464

9.3.2 Illumination (Light-On) State 466

9.4 Effect of Contact Regions 467

9.4.1 Forward-Biased p[superscript +]-i-n[superscript +] Structure 468

9.4.2 Reverse-Biased p[superscript +]-i-n[superscript +] Structure 468

9.4.3 p[superscript +]-i-p[superscript +] Structure 468

9.5 Two-Dimensional Analysis 472

9.5.1 Light-Off State 473

9.5.2 Light-On State 478

9.6 Transient Behavior of Photoconductive Diodes 481.

Notes:

Includes bibliographical references and index.

ISBN:

0890066965 :

OCLC:

29315799