High-power GaAs FET amplifiers / John L.B. Walker, editor.

Format:

Book

Contributor:

Walker, John L. B.

Series:

Artech House microwave library

The Artech House microwave library

Language:

English

Subjects (All):

Power amplifiers.

Metal semiconductor field-effect transistors.

Gallium arsenide semiconductors.

Microwave integrated circuits.

Physical Description:

xii, 369 pages : illustrations ; 24 cm.

Place of Publication:

Boston : Artech House, [1993]

Contents:

1.2 Analysis of Ideal GaAs FET Class A and B Amplifiers 3

1.2.1 Device Physics Versus Circuit Design Viewpoint 3

1.2.2 Class A Amplifiers 4

1.2.3 Single-Ended Class B Amplifiers With Resistive Load 11

1.2.4 Single-Ended Class B Amplifiers With Tuned Load 15

1.2.5 Push-Pull Class B Amplifiers 18

1.2.6 Comparison of the Various Types of Power Amplifiers 21

1.2.7 Validity of the Preceding Analysis 21

1.3 The Concept of Power per Millimeter of Gatewidth 23

1.4 Small-Signal (Linear) and Large-Signal (Nonlinear) Models for an FET 24

1.5 Overview of Design Techniques 30

1.6 Bandwidth Limitations of Reactively Matched Amplifiers 35

1.6.1 Output Matching Network 35

1.6.2 Input Matching Network 38

Chapter 2 High-Power GaAs FETs 43

2.1.1 The Development of the High-Power GaAs FET 43

2.1.2 Current Technology for the High-Power GaAs FET 45

2.2 High-Power FET Design: FET Channel Cross-Section Design 48

2.2.1 The Flow of the Design Process 48

2.2.2 Designing the Epitaxial Wafer Structure 50

2.2.3 Determination of the Gate Length 56

2.2.4 The Scaling Law 58

2.2.5 Breakdown Voltage and Recess Structure 66

2.2.6 Parasitic Resistance 72

2.2.7 Equivalent Circuits 74

2.3 High-Power FET Design: FET Pattern Design 77

2.3.1 The Flow of the Design Process 77

2.3.2 Output Power and Total Gatewidth 77

2.3.3 Determination of the Unit Gatewidth 80

2.3.4 Chip Size 83

2.3.5 Determination of the Number of Pads 84

2.3.6 Pattern Layout 87

2.3.7 Chip Backside Structure 90

2.4 Thermal Properties 94

2.5 Manufacturing 97

2.5.1 Epitaxial Wafer Growth 97

2.5.2 Flow of the Wafer Manufacturing Process 103

2.5.3 Isolation 103

2.5.4 Ohmic Electrode Formation 105

2.5.5 Gate Electrode Formation 108

2.5.6 Protective Layers 111

2.5.7 Overlay Wiring 112

2.5.8 Backside Processing and Via-Hole Connections 112

2.6 Evaluation 113

2.6.1 Evaluation of dc Characteristics 113

2.6.2 Output Power Measurement 114

2.6.3 Measurement of Distortion Features 118

2.6.4 Impedance Measurement and Load-Pull Measurement 120

2.7 Current FETs 123

2.7.1 Standard FET Chips 123

2.7.2 Internally Matched FETs 128

2.7.3 MMIC Power Amplifiers 134

2.8 Trends in Technology 136

2.8.1 Material Technology: The InP MISFET 137

2.8.2 The Heterojunction FET: HEMT and Heterostructure MISFET 139

2.8.3 The Heterojunction Bipolar Transistor 141

Chapter 3 Computer-Aided Design of GaAs FET Power Amplifiers 147

3.2 GaAs FET Nonlinear Models 148

3.2.1 The MESFET Large-Signal RF Equivalent Circuit 149

3.2.2 The MESFET Static dc Model 162

3.2.3 General Guidelines for Large-Signal Model Extraction 172

3.3 A Large-Signal Amplifier Simulation 173

3.3.1 The FLK202XV Large-Signal Model 173

3.3.2 Simulation of the 3.7- to 4.2-GHz, 1-W Class AB Amplifier 174

Chapter 4 High-Power GaAs FET Amplifier Design 189

4.2 Budgeting Transmitting Chain RF Performance 189

4.3 Performance Characterization and Modeling 192

4.3.1 Pulsed RF Testing 192

4.3.2 Bias Points and Class of Operation 194

4.3.3 Small-Signal Modeling 195

4.4 Design Techniques 198

4.4.1 Load-Pull 198

4.4.2 Nonlinear CAD 199

4.4.3 Modified Cripps Method 199

4.5 Scaling 204

4.6 Matching Network Design 208

4.6.1 Output and Interstage Network Load Line Analysis 209

4.6.2 Harmonic Termination Effects 210

4.6.3 Stability Considerations 212

4.7 Thermal Considerations 212

4.8 Gate Current and Insertion Phase 215

4.9 Dual-Gate FET Power Amplifier 216

Chapter 5 Thermal Effects and Reliability 227

5.2 Thermal Fundamentals 228

5.3 Thermal Calculations for Practical FETs 229

5.4 Pulsed Operation 240

5.5 Measurement of Thermal Resistance and Channel Temperature 243

5.6 Reliability 248

5.6.1 Failure Mechanisms 248

5.6.2 Reliability Statistics 250

5.6.3 Reliability Testing 257

Chapter 6 Combining Techniques 263

6.2 Distributed Amplifier Power Combining 264

6.2.1 Small-Signal Analysis 264

6.2.2 Effect of Resistive Terminations and Loss Within the FET on Small-Signal Analysis 271

6.2.3 Large-Signal Analysis 275

6.3 Passive Power Combining/Dividing Networks 281

6.3.1 Two-Way In-Phase Power Combiner/Divider Networks 282

6.3.2 Two-Way Quadrature-Phase Power Combiner/Divider Networks 285

6.3.3 N-Way Power Combiner/Divider Networks 289

6.4 Power Combining Methods 292

6.4.1 Corporate Power Combining 292

6.4.2 Serial Power Combining 302

6.4.3 N-Way Power Combining 305

Chapter 7 Systems Applications of GaAs FET Power Amplifiers 315

7.2 Satellite Applications 316

7.2.1 Reliability 316

7.2.2 Active Phased Arrays 317

7.2.3 Power Combined Amplifiers 319

7.2.4 Mobile Tactical 321

7.2.5 Earth Terminals 328

7.3 Terrestrial Telecommunications 331

7.3.1 Line-of-Sight Links 332

7.3.2 Linearized Amplifiers 332

7.4 Radar and EW Applications for High-Power GaAs FET Amplifiers 334.

Notes:

Includes bibliographical references and index.

ISBN:

0890064792

OCLC:

26851480